High Single-Event Burnout Resistance 4H-SiC Junction Barrier Schottky Diode

Li, Mao-Bin; Cao, Fei; Hu, Hesuan; Li, Xingji; Yang, Jianqun; Wang, Ying

doi:10.1109/jeds.2021.3084797

Cited by 9 publications

(3 citation statements)

References 33 publications

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“…The characteristic time of the temporal Gaussian function is 2 ps [19]. The incident point is chosen at the middle of the Schottky contact, as shown by the red arrow in Figure 1, which is considered to be the most sensitive point of the device [13,28]. The ion track radius is set to 0.1 µm [6] and the depth is long enough to penetrate the entire device.…”

Section: Experiments and Simulation Setupmentioning

confidence: 99%

Heavy Ion Induced Degradation Investigation on 4H-SiC JBS Diode with Different P+ Intervals

Bai

Yang

et al. 2023

Electronics

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The heavy ion radiation response and degradation of SiC junction barrier Schottky (JBS) diodes with different P+ implantation intervals (S) are studied in detail. The experimental results show that the larger the S, the faster the reverse leakage current increases, and the more serious the degradation after the experiment. TCAD simulation shows that the electric field of sensitive points directly affects the degradation rate of devices with different structures. The large transient energy introduced by the heavy ion impact can induce a local temperature increase in the device resulting in lattice damage and the introduction of defects. The reverse leakage current of the degraded device is the same at low voltage as before the experiment, and is gradually dominated by space-charge-limited-conduction (SCLC) as the voltage rises, finally showing ballistic transport characteristics at high voltage.

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Section: Experiments and Simulation Setupmentioning

confidence: 99%

Heavy Ion Induced Degradation Investigation on 4H-SiC JBS Diode with Different P+ Intervals

Bai

Yang

et al. 2023

Electronics

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“…Compared to SiC PIN and junction barrier Schottky (JBS) detectors [11][12][13], the SiC Schottky barrier detectors (SBDs) have fast switching speeds and well-established manufacturing processes. These make it extensive application in environments characterized by high temperatures, high frequencies, and low power consumption [14][15][16].…”

Section: Introductionmentioning

confidence: 99%

Transient behaviour analysis in silicon carbide alpha particle detector using TCAD and SRIM simulation

He,

Cao,

et al. 2024

Phys. Scr.

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Time response characteristics of α particle detector is crucial for monitoring radiation fields varied with time and its characterization of pulse radiation field. Here, SRIM-informed TCAD simulation is utilized to visually investigate the transient behaviors of carrier and alpha particles in 4H-SiC Schottky barrier detectors for the time response characteristics. We identified external bias voltage and incident particle energy as key factors to influence transient current pulse broadening. Low-energy alpha particles result in low initial kinetic energy of the ionization-generated carriers, leading to transient current broadening and reduced time resolution characteristics. Conversely, high-energy alpha particles ionize carrier with high drift velocity, preventing the broadening effect. Our simulation provides a planform and valuable guidance for optimizing alpha particle detector, selecting appropriate bias voltages, and enhancing time resolution capabilities.

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“…Integrating the Schottky barrier diode (SBD) has been suggested to suppress the minority carrier injection of the body diode [13][14][15][16], but the integrated SBD also brings high leakage current. Introducing the MOS channel diode can reduce the hole injection by providing an electron reverse conduction path [17][18][19][20], but fabrication difficulties can be increased. Besides, some ways to increase t r have been proposed, e.g.…”

Section: Introductionmentioning

confidence: 99%

Superjunction MOSFET with a trench contact on partly relatively lightly doped P-pillar for excellent reverse recovery

Li¹,

Huang²,

Zhang³

et al. 2021

Semicond. Sci. Technol.

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A superjunction metal-oxide-semiconductor field-effect transistor (SJ-MOSFET) with a trench contact on partly relatively lightly doped p-pillar is proposed and investigated by TCAD simulations. At reverse conduction state, since electrons in the n-pillar can be easily collected by the trench contact, the hole injection efficiency of the body diode can be lowered to reduce the reverse recovery charge (Q rr ). Besides, the partly relatively lightly doped p-pillar increases the resistance of the hole extraction path so as to increase softness. Simulation results show that the proposed SJ-MOSFET can obtain a 46% lower Q rr than the conventional SJ-MOSFET and significantly suppress reverse recovery oscillations.

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High Single-Event Burnout Resistance 4H-SiC Junction Barrier Schottky Diode

Cited by 9 publications

References 33 publications

Heavy Ion Induced Degradation Investigation on 4H-SiC JBS Diode with Different P+ Intervals

Heavy Ion Induced Degradation Investigation on 4H-SiC JBS Diode with Different P+ Intervals

Transient behaviour analysis in silicon carbide alpha particle detector using TCAD and SRIM simulation

Superjunction MOSFET with a trench contact on partly relatively lightly doped P-pillar for excellent reverse recovery

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