High‐speed 850 nm VCSELs operating error free up to 57 Gbit/s

Westbergh, Petter; Haglund, Erik; Safaisini, Rashid; Gustavsson, Johan S.; Larsson, Anders

doi:10.1049/el.2013.2042

Cited by 137 publications

(48 citation statements)

References 8 publications

(8 reference statements)

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“…Поэтому для получения качественных глазко-вых диаграмм (удовлетворяющих стандартным маскам) на требуемой скорости передачи данных необходимо оптимизировать величину коэф-фициента затухания для одновременного достижения высокой частоты эффективной модуляции и низкого уровня дрожания фазы. В работе [16] показано, что для ВИЛ с максимальной частотой модуляции 23 GHz скорость безошибочной передачи данных при величине K-фактора ∼ 0.17 ns может быть увеличена до 57 Gbit/s. Дальнейшее повышение быстродействия ВИЛ связано с умень-шением тепловыделения и/или улучшением отвода тепла, а также с улучшением электронного и оптического ограничения.…”

Section: управление временем жизни фотонов в резонатореunclassified

“…В этом же году был поставлен новый рекорд скорости передачи данных -44 Gbit/s -с применением ВИЛ на основе квантовых ям InGaAs спектрального диапазона 980 nm с оксидной токовой апертурой 6 µm [14]. Однако уже в 2013 г. этот рекорд был побит: сначала была продемонстрирована скорость передачи данных 47 Gbit/s [15], а затем и 57 Gbit/s [16] В настоящем обзоре рассматриваются основные проблемы обеспе-чения высокого быстродействия ВИЛ при амплитудной модуляции и способы их решения.…”

Section: Introductionunclassified

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Высокоскоростные Полупроводниковые Вертикально-Излучающие Лазеры Для Оптических Систем Передачи Данных (Обзор)

Блохин¹,

Малеев²,

Бобров³

et al. 2018

Письма В Журнал Технической Физики

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The main problems of providing a high-speed operation semiconductor lasers with a vertical microcavity (so-called “vertical-cavity surface-emitting lasers”) under amplitude modulation and ways to solve them have been considered. The influence of the internal properties of the radiating active region and the electrical parasitic elements of the equivalent circuit of lasers are discussed. An overview of approaches that lead to an increase of the cutoff parasitic frequency, an increase of the differential gain of the active region, the possibility of the management of mode emission composition and the lifetime of photons in the optical microcavities, and reduction of the influence of thermal effects have been presented. The achieved level of modulation bandwidth of ∼30 GHz is close to the maximum achievable for the classical scheme of the direct-current modulation, which makes it necessary to use a multilevel modulation format to further increase the information capacity of optical channels constructed on the basis of vertical-cavity surface-emitting lasers.

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Section: управление временем жизни фотонов в резонатореunclassified

Section: Introductionunclassified

Высокоскоростные Полупроводниковые Вертикально-Излучающие Лазеры Для Оптических Систем Передачи Данных (Обзор)

Блохин¹,

Малеев²,

Бобров³

et al. 2018

Письма В Журнал Технической Физики

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“…Frequency and phase remain constant, whereas two different amplitude levels are used to represent the logical values 0 and 1, without a 0 being forced after each 1. Figure 14 shows the effective data rate vs. MMF transmission length for OOK [13,[38][39][40][41][42]. To date, the highest serial data rates demonstrated error-free (BER < 1E-12) using OOK are 71 Gb/s over 7 m [41], 64 Gb/s over 57 m [40], and 60 Gb/s over 107 m [41].…”

Section: Ookmentioning

confidence: 99%

“…Comparable results of 57 Gb/s back-to-back (BTB), 55 Gb/s over 50 m, and 43 Gb/s over 100 m are presented in Ref. [39] without equalization circuits, therefore minimizing the link complexity.…”

Section: Ookmentioning

confidence: 99%

Application of nanophotonics to the next generation of surface-emitting lasers

et al. 2017

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Novel trends and concepts in the design and fabrication of vertical cavity surface-emitting lasers (VCSELs) and their integration in optical networks and implementation in integrated photonics applications are discussed. To serve these goals and match the growing bandwidth demands, significant changes are to be implemented in the device design. New lateral leakage-mediated singlemode VCSELs, including both devices confined by oxide layers and those confined by alloy-intermixed regions, are likely to be good candidates for light sources for the data networks of the future. An overview of the records in VCSEL transmission distances and transmission speeds is discussed in this context.

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“…These applications demand higher bandwidth (> 20 Gbps), longer fiber propagation length (> 1 km), and lower power operation. There have been several reports of VCSEL modulation bandwidth in excess of 50 Gbps [1,2] although these experiments have been into a few 10s of meter of fiber and require very high current density. Modulation gain bandwidth x distance products of 25x1 [3], 20x2 [4], and 1x10 [5] Gbps/km have been achieved using single mode or quasi-single mode VCSELs.…”

mentioning

confidence: 99%

Modulation bandwidth enhancement via resonance detuning in coherently coupled vertical cavity laser arrays

Fryslie

Johnson

Tan

et al. 2014

2014 IEEE Photonics Conference

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Vertical cavity surface emitting lasers (VCSELs) are the dominant source for optical data communication links in computer server, data center, and super computer applications. These applications demand higher bandwidth (> 20 Gbps), longer fiber propagation length (> 1 km), and lower power operation. There have been several reports of VCSEL modulation bandwidth in excess of 50 Gbps [1,2] although these experiments have been into a few 10s of meter of fiber and require very high current density. Modulation gain bandwidth x distance products of 25x1 [3], 20x2 [4], and 1x10 [5] Gbps/km have been achieved using single mode or quasi-single mode VCSELs. Note that longer propagation implies lower bandwidth presumably due to insufficient power. Recently transversely coupled VCSELs have been shown to operate at 36 Gbps, albeit in highly multi-mode operation [6]. We report significant bandwidth enhancement achieved from 1x2 coherently coupled photonic crystal VCSEL arrays. 25 GHz small signal bandwidth (receiver limited) is obtained under single mode operation and simultaneous increased output power, which is nearly a 3-fold improvement compared to incoherent array modulation.As depicted in Fig. 1, the two gain regions of the 1x2 array are defined by ion implantation while the cavities are defined by the photonic crystal hole pattern [7]. The data shown in Figs. 2, 3, and 4 were obtained from a 1x2 photonic crystal VCSEL array. The light output versus current for the array is shown in Fig 2 for different biasing schemes. There is a significant difference in the output power for each pixel biased separately indicating electrical isolation between the pixels. The threshold current when both pixels are biased together is roughly equal to the sum of the threshold currents for each individually biased pixel, as expected. The inset in Fig. 2 shows the output power for constant I 1 = 3.3 mA applied to Pixel 1, while the current I 2 is varied to Pixel 2. There is a spike in the output power at bias currents of I 1 = 3.3 mA and I 2 = 3.26 mA. The emission spectra and far field for the 2x1 array biased at these corresponding currents is shown in Fig. 3. For this bias condition, Pixels 1 and 2 are coherently coupled and out-of-phase with a side-mode suppression ratio of > 50 dBm for the coupled mode. Changing the injection bias conditions enables variation of the phase relation and coherence of the array [8]. In effect, by varying the bias we can tune the resonance of each pixel [9]. By electrically tuning Pixels 1 and 2, highly single-mode emission was obtained throughout the coupled regime, while with sufficient detuning two clearly defined spectral peaks with a single broad Gaussian far-field are apparent (not shown) when Pixels 1 and 2 become uncoupled and incoherent.The small signal modulation responses for different biasing schemes to the 2x1 VCSEL array are measured using an Agilent E8368B vector network analyzer and are depicted in Fig. 4. The network analyzer is set to the sufficiently high input RF power of -10 dBm, with hig...

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High‐speed 850 nm VCSELs operating error free up to 57 Gbit/s

Cited by 137 publications

References 8 publications

Высокоскоростные Полупроводниковые Вертикально-Излучающие Лазеры Для Оптических Систем Передачи Данных (Обзор)

Высокоскоростные Полупроводниковые Вертикально-Излучающие Лазеры Для Оптических Систем Передачи Данных (Обзор)

Application of nanophotonics to the next generation of surface-emitting lasers

Modulation bandwidth enhancement via resonance detuning in coherently coupled vertical cavity laser arrays

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