High speed chalcogenide glass electrochemical metallization cells with various active metals

Hughes, Mark A.; or, Burgess, Alexander,; Hinder, Steven J.; Gholizadeh, A. Baset; Craig, Christopher; Hewak, Daniel W.

doi:10.1088/1361-6528/aac483

Cited by 9 publications

(3 citation statements)

References 50 publications

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“…The dominant RS mechanisms in chalcogenide-based RS devices are the phase change mechanism [92,95,182,185] and ECM [92,176,186,187]. The increase in ionic conductivity associated with the phase transition with respect to temper ature is a typical phenomenon found in chalcogenide materials such as silver selenide (Ag 2 Se), copper(I) selenide (Cu 2 Se) and Ag 2 S [92,182,185].…”

Section: Chalcogenidesmentioning

confidence: 99%

Advances in resistive switching based memory devices

Munjal¹,

Khare²

2019

J. Phys. D: Appl. Phys.

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Among the emerging memories, resistive switching (RS) based resistive random-access memories (RRAMs) are attracting lots of attention due to their simple metal–insulator–metal structures, low power consumption, long endurance and retention characteristics, low fabrication cost, ultrafast switching, and CMOS compatibility. In recent years, several oxides, chalcogenides, polymers and their composites have been explored for RS devices. Many of these studies show a high resistance ratio of the OFF and ON states with good RS characteristics. Some of these studies also show the realization of multifunctional RS devices such as the simultaneous switching of resistance and magnetic states. In order to scale up RS-based RRAMs, a detailed understanding of the occurrence of RS is very much desirable. In this review, we provide an overview of the current understanding, recent advances and future outlook of RS-based RRAM devices along with fundamental concepts of the different types of RS, and conventional as well as novel measurement techniques which are being used to characterize RS devices. Observations of RS in different materials are presented, and RS mechanisms, such as the valence change mechanism and electrochemical metallization memory, are discussed in detail. An overview of multifunctional RS devices and the main challenges faced in scaling up RS devices is also presented.

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Section: Chalcogenidesmentioning

confidence: 99%

Advances in resistive switching based memory devices

Munjal¹,

Khare²

2019

J. Phys. D: Appl. Phys.

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“…The absence of resistive switching for Cr-CrO x /GST/Pt in contrast to Cr/GST/Pt underlines the critical role of an oxidefree interface. Indeed, for the oxide-containing Cr/GaLaSO/ ITO reported by Hughes et al [47] only incomplete resistive switching and fast passivation was found. From the current Although for Au/GST/Pt no signs of resistive switching were observed, it should be noted that filament formation based on Au was reported for Au/SiO 2 /Pt [28].…”

Section: Ecm Cells Without Switchingmentioning

confidence: 93%

Impact of interfaces on bipolar resistive switching behavior in amorphous Ge–Sb–Te thin films

Bryja¹,

Grüner²,

Gerlach³

et al. 2020

J. Phys. D: Appl. Phys.

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Electrochemical metallization memories have received much attention as candidates for next generation non-volatile memory applications, due to their fast switching speed, simple structure, high scalability and low energy consumption. Chalcogenide compounds like Ge–Sb–Te-based materials are extensively studied solid electrolytes for such devices and considered within the most promising candidates. In this work, the influence of different electrode materials on bipolar resistive switching characteristics of amorphous Ge–Sb–Te thin films with close composition to 2:2:5, prepared by pulsed laser deposition, is studied. Detailed investigations by current-voltage measurements, secondary ion mass spectrometry and cross-sectional transmission electron microscopy in conjunction with energy-dispersive x-ray spectroscopy are presented. Depending on the utilized electrode material, analog switching (Cu, Ag, Ti), digital switching (Co, Cr, Ta, Al) or no switching (Pt, Au and Cr-CrOx) occurs. This work shows that the switching behavior of Ge–Sb–Te strongly depends on the solubility and reactivity of the electrode material.

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“…Abrupt set processes have been widely reported in conventional ECM memristors with different metal ions and non-ferroelectric electrolytes [41][42][43][44] . We presume that the gradual set switching behavior observed in Cu and Ni/ PZT/LSMO is induced by the correlation between polarization bound charges and metal ions.…”

Section: Rs Behaviors Of Different Metal/pzt/lsmo Structuresmentioning

confidence: 99%

Implementation of threshold- and memory-switching memristors based on electrochemical metallization in an identical ferroelectric electrolyte

Yoon

Kim

et al. 2023

NPG Asia Mater

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The use of an identical electrolyte in electrochemical metallization (ECM)-based neuron and synaptic devices has not yet been achieved due to their different resistive-switching characteristics. Herein, we describe ECM devices comprising the same ferroelectric PbZr0.52Ti0.48O3 (PZT) electrolyte, which can sustain both neuron and synaptic behavior depending on the identity of the active electrode. The Ag/PZT/La0.8Sr0.2MnO3 (LSMO) threshold switching memristor shows abrupt and volatile resistive switching characteristics, which lead to neuron devices with stochastic integration-and-fire behavior, auto-recovery, and rapid operation. In contrast, the Ni/PZT/LSMO memory switching memristor exhibits gradual, non-volatile resistive switching behavior, which leads to synaptic devices with a high on/off ratio, low on-state current, low variability, and spike-timing-dependent plasticity (STDP). The divergent behavior of the ECM devices is attributed to greater control of cation migration through the ultrathin ferroelectric PZT. Thus, ECM devices with an identical ferroelectric electrolyte offer promise as essential building blocks in the construction of high-performance neuromorphic computing systems.

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High speed chalcogenide glass electrochemical metallization cells with various active metals

Cited by 9 publications

References 50 publications

Advances in resistive switching based memory devices

Advances in resistive switching based memory devices

Impact of interfaces on bipolar resistive switching behavior in amorphous Ge–Sb–Te thin films

Implementation of threshold- and memory-switching memristors based on electrochemical metallization in an identical ferroelectric electrolyte

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