High Speed Contact Type Linear Sensor Array Using a-Si pin Diodes

Yamamoto, Hideaki; Baji, T.; Matsumaru, H.; Tanaka, Yasunori; Seki, K.; Tanaka, Takahide; Sasano, Akira; Tsukada, T.

doi:10.7567/ssdm.1983.b-4-7

Extended Abstracts of The1983 Conference on Solid State Devices and Materials 1983

DOI: 10.7567/ssdm.1983.b-4-7

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High Speed Contact Type Linear Sensor Array Using a-Si pin Diodes

Hideaki Yamamoto¹,

T. Baji²,

H. Matsumaru³

et al.

Abstract: A new contact type linear sensor attay has been successfully developed which employs a-Si pin diodes as blocking diodes and phouo-diodes. This sensor consists of 400-bit (8 bit/mrn) photosensors, and its overall length is 50 mm. It has the advantages of easy fabrication and connection with a scanning circuit. Moreover, it is possible for this sensor to read an A4 size document at'a speed of less than 5 ms/line. Therefore, it is useful as a contact imager for smal1 size facsirnile equipment.

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Two–dimensional photosensor using a–Si pin diodes

Senda

Susas

Hiroshima

et al. 1987

Electron Comm Jpn Pt II

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This paper proposes a two‐dimensional photosensor composed of an a‐Si pin junction. The photosensor is constructed on the glass substrate. The pixel of the sensor is of a simple structure composed of two photodiodes connected in opposite directions between the vertical and the horizontal signal lines. The photodiode constructed by a‐Si pin junction has the function of the blocking diode, preventing the crosstalk in reading out the signal, in addition to the photoelectric conversion. The sensor is of the sandwich type composed of an a‐Si pin junction, and achieves the store‐and‐read operation with a high speed. A large reset noise is superposed on the input signal in the proposed sensor, but is eliminated by the differential amplifier with the double reading drive, leaving only the light signal. A two‐dimensional 5 × 5 photosensor was constructed experimentally, and the basic operation was verified. The photoelectric conversion characteristics are that the output signal is proportional to the input light with the sensitivity of 50 mV/lux·S and S/N of 12 dB.

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Two–dimensional photosensor using a–Si pin diodes

Senda

Susas

Hiroshima

et al. 1987

Electron Comm Jpn Pt II

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A comparison between different structures of amorphous silicon image sensors

Hwang

1991

Thin Solid Films

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Completely integrated contact-type linear image sensor

Morozumi

Kurihara²,

Takeshita³

et al. 1985

IEEE Trans. Electron Devices

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High Speed Contact Type Linear Sensor Array Using a-Si pin Diodes

Cited by 5 publications

References 0 publications

Two–dimensional photosensor using a–Si pin diodes

Two–dimensional photosensor using a–Si pin diodes

A comparison between different structures of amorphous silicon image sensors

Completely integrated contact-type linear image sensor

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