Thin film transistors (TFTs) have been developed on quartz substrates by using large-grain-size polycrystalline silicon (poly-Si) films. The poly-Si films were fabricated by solid phase crystallization (SPC) of amorphous silicon (a-Si) deposited by plasma-enhanced chemical vapor deposition (PECVD). We have found that the dehydrogenation process is strongly correlated with the SPC of the a-Si, especially in nucleus generation time. The n-channel TFT mobility of 158 cm2/(V ·s) is obtained by using the SPC of the PECVD a-Si.

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