High Speed Evanescent Quantum‐Dot Lasers on Si

Wan, Yating; Xiang, Chao; Guo, Joel; Koscica, Rosalyn; Kennedy, M. J.; Selvidge, Jennifer; Zhang, Zeyu; Chang, Lin; Wang, Xie; Huang, Duanni; Gossard, A. C.; Bowers, John E.

doi:10.1002/lpor.202100057

Cited by 77 publications

(49 citation statements)

References 50 publications

(49 reference statements)

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“…Besides intensively studied broad area lasers, narrow ridge lasers that guarantee fundamental transverse electronic mode lasing are now garnering more attention [82][83][84]. Reducing the ridge width down to a few microns, a lower threshold current and better heat dissipation are also expected due to the reduced injection area and efficient current confinement.…”

Section: Fp Lasermentioning

confidence: 99%

Recent Progress of Quantum Dot Lasers Monolithically Integrated on Si Platform

et al. 2022

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With continuously growing global data traffic, silicon (Si)-based photonic integrated circuits have emerged as a promising solution for high-performance Intra-/Inter-chip optical communication. However, a lack of a Si-based light source remains to be solved due to the inefficient light-emitting property of Si. To tackle the absence of a native light source, integrating III-V lasers, which provide superior optical and electrical properties, has been extensively investigated. Remarkably, the use of quantum dots as an active medium in III-V lasers has attracted considerable interest because of various advantages, such as tolerance to crystalline defects, temperature insensitivity, low threshold current density and reduced reflection sensitivity. This paper reviews the recent progress of III-V quantum dot lasers monolithically integrated on the Si platform in terms of the different cavity types and sizes and discusses the future scope and application.

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Section: Fp Lasermentioning

confidence: 99%

Recent Progress of Quantum Dot Lasers Monolithically Integrated on Si Platform

et al. 2022

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“…The same authors demonstrated a transfer rate of 25 Gb/s using eight-layer high-density QD lasers. These superior characteristics indicate that QD lasers are promising as future light sources in low-cost and low-power-consumption applications [ 152 , 153 ]. Moreover, improving the modal gain of QD lasers is of great significance for achieving a higher speed.…”

Section: Physics and Device Properties Of Qdsmentioning

confidence: 99%

Recent Developments of Quantum Dot Materials for High Speed and Ultrafast Lasers

et al. 2022

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Owing to their high integration and functionality, nanometer-scale optoelectronic devices based on III-V semiconductor materials are emerging as an enabling technology for fiber-optic communication applications. Semiconductor quantum dots (QDs) with the three-dimensional carrier confinement offer potential advantages to such optoelectronic devices in terms of high modulation bandwidth, low threshold current density, temperature insensitivity, reduced saturation fluence, and wavelength flexibility. In this paper, we review the development of the molecular beam epitaxial (MBE) growth methods, material properties, and device characteristics of semiconductor QDs. Two kinds of III-V QD-based lasers for optical communication are summarized: one is the active electrical pumped lasers, such as the Fabry–Perot lasers, the distributed feedback lasers, and the vertical cavity surface emitting lasers, and the other is the passive lasers and the instance of the semiconductor saturable absorber mirrors mode-locked lasers. By analyzing the pros and cons of the different QD lasers by their structures, mechanisms, and performance, the challenges that arise when using these devices for the applications of fiber-optic communication have been presented.

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Section: Fundamental Advantages Of the Qd Active Regionmentioning

confidence: 99%

“…By engineering the Si grating designs, rapidly increasing performance is shown in heterogeneously integrated QD DFB lasers: a side-mode-suppression ratio (SMSR) of 40 dB is achieved based on second order surface gratings, 55 a SMSR of 61 dB and a Lorentzian line width of 211 kHz is achieved based on a shallow etched firstorder grating, 56 a SMSR of 60 dB and a Lorentzian line width of 26 kHz is achieved based on first-order side-hole gratings. 49 The Lorentzian line width of tens of kHz is low compared to the typical solitary QW laser line width of several megahertz, attributed to the much lower α H of QDs. In addition, this value also significantly outperforms QD DFB lasers without a Si waveguide, that is, 480 kHz in ref 57 Similarly, the combinations of different Si external cavity designs and the QD active region prove to be effective ways to simultaneously provides the tuning mechanism of the laser as well as the line width reduction.…”

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confidence: 94%

Perspectives on Advances in Quantum Dot Lasers and Integration with Si Photonic Integrated Circuits

et al. 2021

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Epitaxially grown quantum dot (QD) lasers are emerging as an economical approach to obtain on-chip light sources. Thanks to the three-dimensional confinement of carriers, QDs show greatly improved tolerance to defects and promise other advantages such as low transparency current density, high temperature operation, isolator-free operation, and enhanced four-wave-mixing. These material properties distinguish them from traditional III–V/Si quantum wells (QWs) and have spawned intense interest to explore a full set of photonic integration using epitaxial growth technology. We present here a summary of the most recent developments of QD lasers grown on a CMOS-compatible (001) Si substrate, with a focus on breakthroughs in long lifetime at elevated temperatures. Threading dislocations are significantly reduced to the level of 1 × 106 cm–2 via a novel asymmetric step-graded filter. Misfit dislocations are efficiently blocked from the QD region through well-engineered trapping layers. A record-breaking extrapolated lifetime of more than 200000 hours has been achieved at 80 °C, forecasting that device reliability is now entering the realm of commercial relevance and a monolithically integrated light source is finally on the horizon.

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High Speed Evanescent Quantum‐Dot Lasers on Si

Cited by 77 publications

References 50 publications

Recent Progress of Quantum Dot Lasers Monolithically Integrated on Si Platform

Recent Progress of Quantum Dot Lasers Monolithically Integrated on Si Platform

Recent Developments of Quantum Dot Materials for High Speed and Ultrafast Lasers

Perspectives on Advances in Quantum Dot Lasers and Integration with Si Photonic Integrated Circuits

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