2011
DOI: 10.1002/adma.201101179
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High‐Speed Flexible Organic Field‐Effect Transistors with a 3D Structure

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Cited by 57 publications
(33 citation statements)
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“…Response times in short channel three‐dimensional OFETs have been found to be ∼4 MHz . Printable OFETs with MHz frequency response at small channel lengths (200–300 nm) has also been observed .…”
Section: Resultsmentioning
confidence: 90%
“…Response times in short channel three‐dimensional OFETs have been found to be ∼4 MHz . Printable OFETs with MHz frequency response at small channel lengths (200–300 nm) has also been observed .…”
Section: Resultsmentioning
confidence: 90%
“…Comparable results were obtained by Sokolov et al 6 using small molecules evaporated on polymer dielectrics in high vacuum. Uno et al 7 also used high-vacuum evaporation of an organic semiconductor on flexible substrates using parylene as a gate insulator to achieve vertical OFETs with m ¼ 0.15-0.2 cm 2 V À 1 s À 1 ). The key advantage of their transistor design was an interdigitated threedimensional structure, allowing for a high output current, but mechanical flexibility was moderate, with the smallest bending radius of B7 mm.…”
mentioning
confidence: 99%
“…Vertical organic field‐effect transistor designs: a) Top‐gate step‐edge VOFET as proposed by Stutzmann et al and Parashkov et al, b) bottom‐gate step‐edge VOFET described by Uno et al and Kudo et al, and c) stacked bottom‐gate pseudo‐VOFET with additional insulator between source and drain electrodes as employed by Nakamura et al and Kleemann et al…”
Section: Overview Over Device Principles and State‐of‐the‐artmentioning
confidence: 99%