High-speed GaN growth and compositional control of GaN-AlGaN superlattice quasi-ternary compounds by RF-radical source molecular beam epitaxy

2.6 μm/h High-Speed Growth of GaN by RF-Molecular Beam Epitaxy and Improvement of Crystal Quality by Migration Enhanced Epitaxy

“…2 252 cm 2 /Vs at 3.4 Â 10 17 cm -3 . These electrical and optical properties of 2.6 mm/h GaN films are almost the same as those of 1.4 mm/h GaN films grown on LT-GaN buffer layers [3]. These results indicate that the growth rate of RF-MBE grown GaN has been limited by the radical nitrogen supply amount.…”

“…The one is SVP-1120 (SEIKO) system (named D1) having effective pumping speed of 720 l/s, by use of which we had obtained the high growth rate of GaN, 1.4 mm/h [3]. The other one is RC210DGNRT (MECS) system (named E1) with the effective pumping speed of 1450 l/s.…”

GaN:Eu electroluminescent devices grown by interrupted growth epitaxy

“…In the first two techniques the nitrogen flux is interrupted periodically at a constant Ga flux to facilitate the surface migration of the Ga atoms. In this case the nitrogen shutter is modulated at periods in the order of seconds (¨1-2 [12] and 20 -40 s [10]). In migration enhanced epitaxy both Ga and N fluxes are modulated consecutively.…”

“…Several techniques have been investigated in order to enhance the quality of the semiconductor material, namely shutter control method [10], nitrogen beam modulation [1], and migration enhanced epitaxy (MEE) [11]. All these techniques have as a common feature the goal of increasing the surface migration of Ga atoms during GaN growth.…”

InGaN/GaN MQW and Mg-Doped GaN Growth Using a Shutter Control Method by RF-Molecular Beam Epitaxy

“…However, the growth of standard MBE mode tends to induce columnar growth, which brings about poor surface morphologies and electrical properties. Several effective techniques to improve the crystal quality of GaN, such as the shutter control method [4], the nitrogen beam modulation [5], and the Migration Enhanced Epitaxy (MEE) [6] and so on, have been reported. In these methods, Ga atom migration on the substrate surface can be enhanced during interrupted nitrogen flux.…”