InGaN/GaN MQW and Mg-Doped GaN Growth Using a Shutter Control Method by RF-Molecular Beam Epitaxy

Nakamura, S.; Kikuchi, Akihiko; Kusakabe, Kazuhide; Sugihara, Daisuke; Toyoura, Y.; Yamada, Takayuki; Kishino, Katsumi

doi:10.1002/(sici)1521-396x(199911)176:1<273::aid-pssa273>3.0.co;2-m

Cited by 6 publications

(3 citation statements)

References 7 publications

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“…In the first two techniques the nitrogen flux is interrupted periodically at a constant Ga flux to facilitate the surface migration of the Ga atoms. In this case the nitrogen shutter is modulated at periods in the order of seconds (¨1-2 [12] and 20 -40 s [10]). In migration enhanced epitaxy both Ga and N fluxes are modulated consecutively.…”

Section: Methodsmentioning

confidence: 99%

GaN:Eu electroluminescent devices grown by interrupted growth epitaxy

Munasinghe¹,

Steckl²

2006

Thin Solid Films

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Section: Methodsmentioning

confidence: 99%

GaN:Eu electroluminescent devices grown by interrupted growth epitaxy

Munasinghe¹,

Steckl²

2006

Thin Solid Films

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“…5) The GaN layers were grown by the shutter control method (Ga was supplied continuously but the nitrogen supply was interrupted periodically). 15,16) The RHEED pattern during the HT-AlN-NL growth was fuzzily spotty, but the HT-AlN-ILs on the GaN layers showed bright and sharp (1 × 1) streaks. During the GaN growth, the streak was dark due to the slight Ga-rich condition, but the streak became bright and sharp (1×1) when the Ga supply was stopped.…”

Section: Introductionmentioning

confidence: 99%

Improvement of Crystal Quality of RF-Plasma-Assisted Molecular Beam Epitaxy Grown Ga-Polarity GaN by High-Temperature Grown AlN Multiple Intermediate Layers

Kikuchi

Yamada

Nakamura

et al. 2000

Jpn. J. Appl. Phys.

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The effects of high-temperature-grown AlN multiple intermediate layers (HT-AlN-MILs) on the crystal quality of Ga-polarity GaN layers grown on (0001) Al 2 O 3 substrates by molecular beam epitaxy using rf-plasma nitrogen source were investigated. The high-temperature-grown AlN intermediate layers (HT-AlN-ILs) with different thicknesses were found to play different roles in the improvement of crystal quality. The 8-nm-thick HT-AlN-ILs brought about improvement of electrical properties. On the other hand, the 2-nm-thick HT-AlN-ILs improved the surface morphology. The combination of these 8-nm-HT-AlN-ILs and 2-nm-HT-AlN-ILs improved both the electrical properties and the surface morphology concurrently.

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“…All these techniques have as a common feature the goal of increasing the surface migration of Ga atoms during GaN growth. In MEE, the nitrogen and Ga shutters are modulated consecutively with no overlap for periods in the order of seconds (~1-2 seconds [7] and 20-40 seconds [4]). 1.…”

Section: Introductionmentioning

confidence: 99%

GaN:Eu Interrupted Growth Epitaxy (IGE): Thin Film Growth and Electroluminescent Devices

et al. 2005

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The GaN:RE phosphor development plays a major role in the GaN:RE AC thick dielectric electroluminescent (TDEL) device optimization. In this paper we report on EL devices fabricated using Eu-doped GaN red phosphors films grown by interrupted growth epitaxy (IGE). IGE consists of a sequence of ON/OFF cycles of the Ga and Eu beams, while the N 2 plasma is kept constant during the entire growth time. IGE growth of GaN:Eu resulted in significant enhancement in the Eu emission intensity based primarily at 620.5nm. The increase in the material crystallinity observed with the IGE phosphors appears to be the dominant cause of the emission enhancement. Thick dielectric EL devices fabricated on glass substrates using IGE-grown GaN:Eu have resulted in luminance of ~1000 cd/m 2 .

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InGaN/GaN MQW and Mg-Doped GaN Growth Using a Shutter Control Method by RF-Molecular Beam Epitaxy

Cited by 6 publications

References 7 publications

GaN:Eu electroluminescent devices grown by interrupted growth epitaxy

GaN:Eu electroluminescent devices grown by interrupted growth epitaxy

Improvement of Crystal Quality of RF-Plasma-Assisted Molecular Beam Epitaxy Grown Ga-Polarity GaN by High-Temperature Grown AlN Multiple Intermediate Layers

GaN:Eu Interrupted Growth Epitaxy (IGE): Thin Film Growth and Electroluminescent Devices

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