High-speed Ge photodetector monolithically integrated with large cross-section silicon-on-insulator waveguide

Feng, Dazeng; Liao, Shirong; Dong, Po; Feng, Ning‐Ning; Liang, Hong; Zheng, Dawei; Kung, Cheng-Chih; Fong, Joan; Shafiiha, Roshanak; Cunningham, J. E.; Krishnamoorthy, Ashok V.; Asghari, Mehdi

doi:10.1063/1.3279129

Cited by 185 publications

(80 citation statements)

References 16 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…Although silicon is not suited as a light emitter or detector in the infrared, several approaches have been demonstrated to integrate lasers and detectors on a silicon platform [2][3][4][5] modulators and detectors, is an important requirement. This can be achieved by using e.g.…”

Section: Introductionmentioning

confidence: 99%

Realization of a Compact Optical Interconnect on Silicon by Heterogeneous Integration of III–V

Spuesens

Bauwelinck

Régrény

et al. 2013

IEEE Photon. Technol. Lett.

View full text Add to dashboard Cite

Abstract-We present a compact optical interconnect on a silicon-on-insulator platform consisting of a directly modulated microdisk laser and detector connected via a silicon waveguide. A single III-V epitaxial structure that contains layers for both the laser and detector ensures that dense integration becomes possible. All fabrication steps for the laser and detector, except for the detector mesa, are carried out simultaneously. The microdisk laser has a threshold current of 0.45 mA and a slope efficiency of 57 µW/mA. The responsivity of the detectors is 0.69 A/W. The full optical link has a static efficiency of 3% and a bandwidth of 7.6 GHz. A large signal modulation was applied and a 10 Gb/s bit pattern could be resolved.Index Terms-Heterogeneous integration, microdisk laser (MDL), optical interconnect, photonic integration, silicon photonics, waveguide photodetector.

show abstract

Section: Introductionmentioning

confidence: 99%

Realization of a Compact Optical Interconnect on Silicon by Heterogeneous Integration of III–V

Spuesens

Bauwelinck

Régrény

et al. 2013

IEEE Photon. Technol. Lett.

View full text Add to dashboard Cite

show abstract

“…Although group-IV-based optical building blocks including silicon modulators, 2 microring resonators, 3 waveguides, 4 and germanium photodetectors 5 have demonstrated their techno-economic viability, an efficient Si-based laser source remains the most challenging component due to the indirect bandgap of Si. 6 Integrating high performance III-V lasers with Si has been considered a promising path to resolve this challenge.…”

mentioning

confidence: 99%

1.55 μm room-temperature lasing from subwavelength quantum-dot microdisks directly grown on (001) Si

Shi

Zhu

et al. 2017

Applied Physics Letters

View full text Add to dashboard Cite

Miniaturized laser sources can benefit a wide variety of applications ranging from on-chip optical communications and data processing, to biological sensing. There is a tremendous interest in integrating these lasers with rapidly advancing silicon photonics, aiming to provide the combined strength of the optoelectronic integrated circuits and existing large-volume, low-cost silicon-based manufacturing foundries. Using III-V quantum dots as the active medium has been proven to lower power consumption and improve device temperature stability. Here, we demonstrate room-temperature InAs/InAlGaAs quantum-dot subwavelength microdisk lasers epitaxially grown on (001) Si, with a lasing wavelength of 1563 nm, an ultralow-threshold of 2.73 μW, and lasing up to 60 °C under pulsed optical pumping. This result unambiguously offers a promising path towards large-scale integration of cost-effective and energy-efficient silicon-based long-wavelength lasers.

show abstract

“…Longer absorption lengths and much smaller devices could be realized by waveguide integration, leading to higher quantum effi ciency, higher bandwidth and lower dark current. Th e most recently reported device, a silicon waveguide with integrated germanium p-i-n detector, has a sensitivity of 1.1 A W -1 and a 3 dB bandwidth of over 32 GHz [42]. Th e device structure is shown in Figure 4.…”

Section: Integrated Silicon Photodetectorsmentioning

confidence: 99%

Device engineering for silicon photonics

Chen

Tsang

2011

NPG Asia Mater

View full text Add to dashboard Cite

A fter an impressive initial spurt of progress in device engineering during the early 2000s when the optical communications industry saw unprecedented levels of investment, silicon photonics continues to develop at an amazing pace. Many novel applications and devices are emerging. Silicon photonics has the potential to become a major platform for optoelectronic integrated circuits (OEICs) and to be used in high-speed optical interconnects for chip-level data communications because of the extremely large bandwidth and high speed off ered by optical communications. Many challenges have been addressed through the introduction of innovative ideas, paving the way for the practical deployment of silicon-based optoelectronic devices and integrated photonic circuits in computing and telecommunication systems [1]. Th e commercialization of silicon photonics, originally driven by applications in telecommunications, is now also driven by the needs of the computing industry for highspeed, energy-effi cient optical cable technology, such as the Light Peak Technology under development by Intel (USA). Th e California-based company Luxtera (USA) has also commercialized a series of siliconphotonic transceiver systems.Silicon off ers many advantages over alternative material systems (e.g. InP, GaAs, LiNbO 3 ) for OEIC applications. One major reason for the wide interest that silicon photonics is attracting is the cost advantage that silicon photonics can potentially off er through its compatibility with the complementary metal-oxide-semiconductor (CMOS) fabrication processes used in the microelectronics industry. Th e huge investments that have been made in CMOS microelectronics fabrication technologies has resulted in processes that off er much higher yield than is possible using alternative materials for photonics, thus making feasible large-scale integration and the production of silicon-photonic devices that are monolithically integrated with not only optical components but also electronic circuits in the same platform at ultrahigh density. Another reason for the attractiveness of silicon photonics is the high refractive index contrast between the silicon core (refractive index, 3.48) and silicon dioxide cladding (refractive index, 1.45) in silicon-on-insulator (SOI) devices, which ensures the submicrometer confi nement of light and allows tight bending in optical waveguides. Th e high-density integration of photonic circuits on SOI platforms is thus feasible. Th e low cost of high-quality SOI wafers is another advantage of silicon photonics. All kinds of low-cost devices enabled by silicon photonics are therefore predicted, and these may also enjoy the other benefi ts of monolithic integration: smaller size, increased power effi ciency and improved reliability. Figure 1 shows an example of a high-density integrated photonics devices fabricated on a 6-inch SOI wafer using CMOS-compatible technology.In this article, we review some of the exciting progress that has been made in silicon photonics with the aim of providing a broa...

show abstract

High-speed Ge photodetector monolithically integrated with large cross-section silicon-on-insulator waveguide

Cited by 185 publications

References 16 publications

Realization of a Compact Optical Interconnect on Silicon by Heterogeneous Integration of III–V

Realization of a Compact Optical Interconnect on Silicon by Heterogeneous Integration of III–V

1.55 μm room-temperature lasing from subwavelength quantum-dot microdisks directly grown on (001) Si

Device engineering for silicon photonics

Contact Info

Product

Resources

About