High-speed Graded-channel GaN HEMTs with Linearity and Efficiency

Moon, Junghwan; Grabar, Bob; Antcliffe, M.; Wong, Joel; Dao, Chuong; Chen, Peter; Arkun, Erdem; Khalaf, Isaac; Corrion, A.; Chappell, James M.; Venkatesan, Nivedhita; Fay, Patrick

doi:10.1109/ims30576.2020.9223775

Cited by 15 publications

(5 citation statements)

References 15 publications

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“…The second derivative of g m which is proportional to IMD has been extracted to investigate the effectiveness of this linearization strategy [21,35]. In this work the contribution of gate capacitance, C G whose contribution towards IMD is less than 10% has not been explored [36].…”

Section: Design For High Linearitymentioning

confidence: 99%

AlGaN/GaN superlattice-based multichannel RF transistors for high linearity and reliability: a simplified simulation approach

Shaji

Uren

Parke

et al. 2023

Semicond. Sci. Technol.

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Multichannel RF power amplifiers offer high frequency operation, high current and RF power, combined with excellent linearity. 3D and 2D simulation is used to investigate how changes in device architecture impact both the linearity and off-state reliability, allowing an improved linear design which does not compromise reliability. Linearity is assessed by extraction of gm 3 / gm '' , and third order intercept (TOI) as a function of gate bias, using a straightforward 2D approximation which is computation time and resource efficient compared to the full 3D simulation normally used for these devices. Off-state reliability is assumed to be linked to dielectric failure, and hence peak electric field as a measure of reliability is evaluated at gate corners and edges using a full 3D simulation. It is found that introducing a channel number-dependent doping in the AlGaN/GaN-based superlattice structure can be used to enable an improved transconductance–linearity. It is also found that there is a strong increase in TOI as gate dielectric thickness or fin width is increased. On the other hand, in order to maintain reliability, increased fin height is found to be essential in order to reduce electric field as dielectric thickness is increased. Finally, a device architecture for improving linearity, power and reliability is suggested

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Section: Design For High Linearitymentioning

confidence: 99%

AlGaN/GaN superlattice-based multichannel RF transistors for high linearity and reliability: a simplified simulation approach

Shaji

Uren

Parke

et al. 2023

Semicond. Sci. Technol.

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“…19(b) shows an excellent OIP3/P DC of 9.7 dB at 10 GHz. A device equipped with 50 nm T-gate length is proposed for mmWave application with 360 GHz f max by Moon et al [112] . This device has a flat g m with a smaller and , which exhibits excellent linearity performance.…”

Section: Graded Channelmentioning

confidence: 99%

A review on GaN HEMTs: nonlinear mechanisms and improvement methods

Du,

Ye,

Cai

et al. 2023

J. Semicond.

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The GaN HEMT is a potential candidate for RF applications due to the high frequency and large power handling capability. To ensure the quality of the communication signal, linearity is a key parameter during the system design. However, the GaN HEMT usually suffers from the nonlinearity problems induced by the nonlinear parasitic capacitance, transconductance, channel transconductance etc. Among them, the transconductance reduction is the main contributor for the nonlinearity and is mostly attributed to the scattering effect, the increasing resistance of access region, the self-heating effect and the trapping effects. Based on the mechanisms, device-level improvement methods of transconductance including the trapping suppression, the nanowire channel, the graded channel, the double channel, the transconductance compensation and the new material structures have been proposed recently. The features of each method are reviewed and compared to provide an overview perspective on the linearity of the GaN HEMT at the device level.

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“…Weichuan Xing et al [159] designed 150*150 nm nanostrip gate hole structure by BCl 3 /Cl 2 and Al 2 O 3 insulator which have good linearity. Jeong-sun Moon et al [160] used AlGaN/GaN graded channel which have good PAE and linearity. Bin Hou et al [161] used barrier layer of sandwich structure and AlGaN back barrier which show good power performance and linearity.…”

Section: Rf Gan Performance Si Substratementioning

confidence: 99%

Development of GaN HEMTs Fabricated on Silicon, Silicon-on-Insulator, and Engineered Substrates and the Heterogeneous Integration

Hsu

Lai

et al. 2021

Micromachines

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GaN HEMT has attracted a lot of attention in recent years owing to its wide applications from the high-frequency power amplifier to the high voltage devices used in power electronic systems. Development of GaN HEMT on Si-based substrate is currently the main focus of the industry to reduce the cost as well as to integrate GaN with Si-based components. However, the direct growth of GaN on Si has the challenge of high defect density that compromises the performance, reliability, and yield. Defects are typically nucleated at the GaN/Si heterointerface due to both lattice and thermal mismatches between GaN and Si. In this article, we will review the current status of GaN on Si in terms of epitaxy and device performances in high frequency and high-power applications. Recently, different substrate structures including silicon-on-insulator (SOI) and engineered poly-AlN (QST®) are introduced to enhance the epitaxy quality by reducing the mismatches. We will discuss the development and potential benefit of these novel substrates. Moreover, SOI may provide a path to enable the integration of GaN with Si CMOS. Finally, the recent development of 3D hetero-integration technology to combine GaN technology and CMOS is also illustrated.

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High-speed Graded-channel GaN HEMTs with Linearity and Efficiency

Cited by 15 publications

References 15 publications

AlGaN/GaN superlattice-based multichannel RF transistors for high linearity and reliability: a simplified simulation approach

AlGaN/GaN superlattice-based multichannel RF transistors for high linearity and reliability: a simplified simulation approach

A review on GaN HEMTs: nonlinear mechanisms and improvement methods

Development of GaN HEMTs Fabricated on Silicon, Silicon-on-Insulator, and Engineered Substrates and the Heterogeneous Integration

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