High speed growth of device quality GaN and InGaN by RF-MBE

Nitrogen supply rate dependence of InGaN growth properties, by RF-MBE

“…With increasing nitrogen flow rate, the diffraction peak position of InGaN (0 0 0 2) shifted from that of GaN to InN (0 0 0 2), that is, indium content increased from $1% to 22%. This result is in agreement with results of the change of the indium content by a change of RF-power, reported by Kushi et al [9].…”

“…To obtain the entire alloy composition of InGaN, generally growth conditions such as growth temperature [1,9,10] or In/Ga supply ratio [9][10][11] reports of the growth of InGaN, in which the nitrogen supply rate was intentionally changed, were still few. Therefore, relationship between N/III supply ratio and the properties of InGaN, such as the surface morphology, the resulting alloy composition and optical properties, are not understood well.…”

Synthesis of Monodisperse Ultrapure Gallium Nitride Nanoparticles by MOCVD

“…No apparent quantum confinement effect was observed since the nanoparticles reported here had a mean size of 6.4 nm, which was relatively large considering that the Bohr radius of GaN is approximately 3 nm. [17] Differing from the thin film materials, [18] longer wavelength emis- sion was also observed, indicating collateral emission from surface defects or from a deep trap. [19] To summarize this study, we confirm the unique fact that highly pure, monodisperse, and ultrafine GaN nanoparticles can be produced by means of MOCVD.…”

Compositional, Structural, and Optical Characterizations of In1-XGaxN Epilayers Grown by High Pressure Chemical Vapor Deposition

“…The large lattice mismatch may induce lattice strain [6] and contribute to a potential solid-phase miscibility gap in the ternary In 1-x Ga x N alloy system [7]. These factors may be a cause of the reported compositional inhomogeneity observed in In 1-x Ga x N epilayers [8][9][10][11][12], which reduces the device efficiencies of In 1-x Ga x N based optoelectronic structures. However, high pressure chemical vapor deposition has been found to be an effective technique to improve the phase stability in In 1-x Ga x N epilayers [13].…”