Nitrogen supply rate dependence of InGaN growth properties, by RF-MBE

Band gap energy fluctuations in InGaN films grown by RF‐MBE with changing nitrogen supply rate investigated by a piezoelectric photothermal spectroscopy

“…Though an accurate absorption edge was not obtained, the energy difference between estimated this edge and the PPT edge was similar to the above tendency. Also, we have previously reported many nonradiative recombination centers existed in sample grown by the condition of group-III-rich (the low nitrogen flow rate), compared with that of nitrogen-rich (high nitrogen flow rate) in the case of InGaN growth from the viewpoint of results of luminescence measurement [6].…”

“…We have reported the structural and luminescence properties of Ga-rich InGaN layers grown by RF-MBE with varying nitrogen flow rate, it found that non-radiative recombination center decreased and generation of phase separation was prevented under nitrogen-rich supply condition. Also, it is cleared that the indium incorporation is greatly dependent on the nitrogen supply rate which was confirmed by structural investigations [6]. But, non-radiative recombination process has been not observed directly.…”

Optical properties of Ga_0.82In_0.18N <i>p</i>-<i>n</i> homojunction blue-green light-emitting-diode grown by radio-frequency plasma-assisted molecular beam epitaxy

“…In the RF-MBE growth of Ga1-xInxN, precise control of Ga, In, and nitrogen radical beam fluxes is required; i.e., the metal-rich condition yields two dimensional growth, [4] though phase separation is occasionally induced. [5] In contrast, an N-rich condition yields a uniform alloy composition without phase separation, [6] although the surface flatness is sacrificed. Accordingly, slightly metal-rich condition is preferred to maintain sufficiently good crystalline quality, but the condition induces phase separation in the case of thick Ga1-xInxN growth spending long time.…”

Growth of thick InGaN films with entire alloy composition using droplet elimination by radical-beam irradiation

“…The growth of InGaN by molecular beam epitaxy (MBE) has been widely studied in many research institutes [5][6][7][8][9][10]. It is very important to find the optimum growth conditions, especially in terms of V/III ratio, for obtaining high-quality InGaN films by MBE.…”

“…The metal-rich condition sometimes induces phase separation [8]. Therefore, a slightly N-rich condition was reported to be used to obtain a uniform alloy composition without phase separation [9,10], although surface flatness is sacrificed.…”