High-speed, high-reliability GaN power device with integrated gate driver

Tang, Gaofei; Kwan, M.-H.; Zhang, Zhaofu; He, Jiabei; Lei, Jiacheng; Su, R.Y.; Yao, F.-W.; Lin, Yo-Sheng; Yu, Jingshu; Yang, Tao; Chern, C. H.; Tsai, Tom; Tuan, H.C.; Kalnitsky, Alexander; Chen, Kevin J.

doi:10.1109/ispsd.2018.8393606

Cited by 64 publications

(12 citation statements)

References 8 publications

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“…This method offers smalller circuit area and superior switching performance compared to conventional discrete driving methods due to the reduction of parasitic inductance. Therefore, it is expected to be a promising candidate and also the related works have been reported the same in [28,29,30]. However, there are still few papers that take into account the problems of GaN HEMTs.…”

Section: Monolithic Integrationmentioning

confidence: 95%

An E-mode p-GaN HEMT monolithically-integrated three-level gate driver operating with a single voltage supply

Nagao

Chatterjee

et al. 2021

IEICE Electron. Express

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A three-level gate driver and a power Gallium Nitride High Electron Mobility Transistors (GaN HEMTs) were monolithically integrated to prevent false turn-on, reduce reverse conduction loss and realize fast switching. The proposed gate driver works with an external and an integrated capacitor which supply negative gate voltage. Monolithic integration makes power conversion circuits smaller in size and improves circuit performance due to its lower parasitics. The integrated MIM (Metal-Insulator-Metal) capacitor improves dv/dt immunity. Measurement results showed that the proposed GaN-IC realized fast switching speed of 3.7 ns t on and 6.1 ns t off , and improved efficiency of an SR buck-converter.

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Section: Monolithic Integrationmentioning

confidence: 95%

An E-mode p-GaN HEMT monolithically-integrated three-level gate driver operating with a single voltage supply

Nagao

Chatterjee

et al. 2021

IEICE Electron. Express

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“…In the GaN wafer process not only the single power switch can be manufactured, also further transistor(s) or diodes can be integrated to form e.g. a half bridge [9], [10]. With the integration of enhancement and depletion mode transistors NAND, NOR or NOT logic patterns can be built [11].…”

Section: Monolithic Integration In Ganmentioning

confidence: 99%

Commercial Sweet Spots for GaN and CMOS Integration by Micro-Transfer-Printing

Lerner¹,

Hansen²

2021

ISPS'21 Proceedings

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Several approaches for close integration of power switches with CMOS logic are subject of technical evaluations and academic discussions. This paper identifies the commercially relevant processing steps of different integration methods (HV and SOI CMOS, monolithic integration in SOI and in GaN, Direct Wafer Bonding, micro-Transfer-Printing of GaN on CMOS and CMOS on GaN) and compares them on simple cost per wafer and cost per chip models. Four examples of real ICs verify the simple costs per chip model. Commercially attractive high voltage to logic partitionings are identified for the different integration approaches.

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“…For power‐electronic applications, normally off and normally on high‐voltage HFETs can be combined with diodes, i.e. for reverse conduction and with normally off and normally on low‐voltage HFETs for gate driving [28, 30] and logic [31]. Monolithic half‐bridges and related topologies can be realised as inverter cells with very small commutation loops [32].…”

Section: Lateral Gan Transistorsmentioning

confidence: 99%

Lateral and vertical power transistors in GaN and Ga ₂ O ₃

Hilt

Bahat‐Treidel

Wolf

et al. 2019

IET Power Electronics

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Vertical silicon carbide transistors and lateral gallium nitride (GaN) transistors for power-electronic applications currently target applications with different voltage and power ratings. Meanwhile, research and development activities continue on vertical GaN transistors and new gallium oxide (Ga 2 O 3) transistors. What are their perspectives in the application and how do they compete against each other and against established transistor technologies? This study discusses the specific characteristics of lateral and vertical GaN and Ga 2 O 3 transistors to assess their strengths and weaknesses.

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High-speed, high-reliability GaN power device with integrated gate driver

Cited by 64 publications

References 8 publications

An E-mode p-GaN HEMT monolithically-integrated three-level gate driver operating with a single voltage supply

An E-mode p-GaN HEMT monolithically-integrated three-level gate driver operating with a single voltage supply

Commercial Sweet Spots for GaN and CMOS Integration by Micro-Transfer-Printing

Lateral and vertical power transistors in GaN and Ga ₂ O ₃

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High-speed, high-reliability GaN power device with integrated gate driver

Cited by 64 publications

References 8 publications

An E-mode p-GaN HEMT monolithically-integrated three-level gate driver operating with a single voltage supply

An E-mode p-GaN HEMT monolithically-integrated three-level gate driver operating with a single voltage supply

Commercial Sweet Spots for GaN and CMOS Integration by Micro-Transfer-Printing

Lateral and vertical power transistors in GaN and Ga 2 O 3

Contact Info

Product

Resources

About

Lateral and vertical power transistors in GaN and Ga ₂ O ₃