High speed, high temperature electrical characterization of phase change materials: metastable phases, crystallization dynamics, and resistance drift

Dirisaglik, Faruk; Bakan, Gökhan; Jurado, Zoila; Muneer, Sadid; Akbulut, Mustafa; Rarey, Jonathan; Sullivan, Lindsay; Wennberg, Maren; King, Adrienne; Zhang, Lingyi; Nowak, Rebecca G.; Lam, C.; Silva, Helena; Gokirmak, Ali

doi:10.1039/c5nr05512a

Cited by 56 publications

(45 citation statements)

References 40 publications

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“…The reset resistance is observed to drift over time as expected from melt-quenched GST (R reset $ t n ) with an exponent (n) of 0.1 (Ref. 14). 1 MX or 50 X is used as R termination for the resistance measurement depending on the cell resistance.…”

Section: Methodsmentioning

confidence: 99%

“…While determining the amorphous volume, the resistivity of 96.4 X cm is used for the amorphous region which is obtained as an average value from measurements of 35 devices. 14 The curvature of the amorphouscrystalline interface as shown in Figure 2(b) is determined by simulating a reset pulse (supplementary Figure S2).…”

Section: Thermal Modellingmentioning

confidence: 99%

“…21 The TiN/GST junction on devices with 4 individual contacts is characterized to be Ohmic with low contact resistance compared to the reset resistance levels. 14 The time-dependent thermal transport equation is solved on the 3D geometry using P GST as the heat dissipated on the amorphous volume and temperature dependent thermal parameters using COMSOL Multiphysics 22 (see Table I and supplementary Figure S4)…”

Section: Thermal Modellingmentioning

confidence: 99%

“…Using a fast heater or an integrated micro-stage provides a larger heating rate, 12,13 hence increases the maximum temperature at which the crystallization studies can be performed up to 700 K. Alternatively, PCM devices can be reset on a hot-plate at elevated temperatures under constant resistance monitoring. 14 an actual set operation which brings the cell temperature close to the melting temperature within nanoseconds (10 11 K/s). The challenge with using self-heating to characterize the crystallization process is the measurement of the cell temperature.…”

Section: Introductionmentioning

confidence: 99%

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Extracting the temperature distribution on a phase-change memory cell during crystallization

Bakan

Gerislioglu

Dirisaglik

et al. 2016

Journal of Applied Physics

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Phase-change memory (PCM) devices are enabled by amorphization-and crystallization-induced changes in the devices' electrical resistances. Amorphization is achieved by melting and quenching the active volume using short duration electrical pulses ($ns). The crystallization (set) pulse duration, however, is much longer and depends on the cell temperature reached during the pulse. Hence, the temperature-dependent crystallization process of the phase-change materials at the device level has to be well characterized to achieve fast PCM operations. A main challenge is determining the cell temperature during crystallization. Here, we report extraction of the temperature distribution on a lateral PCM cell during a set pulse using measured voltage-current characteristics and thermal modelling. The effect of the thermal properties of materials on the extracted cell temperature is also studied, and a better cell design is proposed for more accurate temperature extraction. The demonstrated study provides promising results for characterization of the temperature-dependent crystallization process within a cell. Published by AIP Publishing.

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Section: Methodsmentioning

confidence: 99%

Section: Thermal Modellingmentioning

confidence: 99%

Section: Thermal Modellingmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Extracting the temperature distribution on a phase-change memory cell during crystallization

Bakan

Gerislioglu

Dirisaglik

et al. 2016

Journal of Applied Physics

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“…Kedua gaya ini bekerja dalam arah yang berlawanan dan ion mencapai kecepatan akhir, yaitu kecepatan hanyut ion (s), jika gaya mempercepat F diimbangi oleh gaya perlambatan F ' . Gaya neto menjadi nol (F=F ' ) (195)(196)(197)(198)(199)(200) jika :…”

Section: Kecepatan Hanyutunclassified

A Review : Aspek Termodinamika LiNO3 dalam Larutannya

Husna¹,

Zainul²

2019

Preprint

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Nitrat litium merupakan senyawa ionik yang memiliki rumus senyawa LiNO3. Litium berikatan ion dengan nitrat,yaitu ikatan ion poliatomik. Litium nitrat disusun atas atom-atom logam dan non-logam, karena itu jenis ikatannya bersifat ionik. Elektron valensi dipegang oleh ion individu, sehingga mereka tidak bebas untuk menghantarkan listrik. Dalam laboratorium, LiNO3 pada umumnya terikat pada ion-ion trihidrat untuk menguji ikatan hidrogen bifurksi yang berkorelasi dengan kekutan ikatan hidrogen di dalam struktur kristal molekul. Tujuan review ini adalah untuk mengetahui aspek termodinamika larutan dan karakteristik molekul LiNO3. Menganalisis interaksi molekul dan kinetika LiNO3. Menyajikan sintesis dan parameter transfer ion ; konduktivitas, mobilitas ion, viskositas, difusi fick,dan kecepatan hanyut ion. Review ini juga akan memuat beberapa sifat fisika dan kimia litium nitrat. Sifat molekul LiNO3 adalah fase viskositas dinamika cairan antara lain 5,85 (277°), 4,25 (327°), 2,95 (377°), 2,03 (427°) mPa∙s (ΔfHo) : -482,3 kJ/mol, (So) : 105 J/mol K, energi bebas gibbs (ΔfG) : -389,5 kJ/mol pada suhu 250C tekanan 1 atm . konduktivitas molar ion 0.2085 −1. Mobilitas ion NO3- adalah 7.40 (10-8 m2 s-1V-1) serta kecepatan hanyut 0,398 V/cm. Dari data pecobaan koefisien difusi LiNO3 pada suhu 2000C masing-masing 4,81x10-6 dan 9,94x10-7 cm2/detik. Selain membahas sifat kimia dan fisika. Metode yang digunakan dalah permodelan dengan chemoffice 15.0 yaitu penggambaran molekul dengan 2D dan 3D. Metode komputasi untuk menjelaskan perhitungan matematika. Harga energi optimasi minimum 5.1769 kcal/mol, total energinya sebesar 71.498 kcal/mol yang didapat berdasarkan metoda komputasi.

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VO₂‐Based Reconfigurable Antenna Platform with Addressable Microheater Matrix

Gerislioglu

Ahmadivand

Karabiyik

et al. 2017

Adv Elect Materials

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High speed, high temperature electrical characterization of phase change materials: metastable phases, crystallization dynamics, and resistance drift

Cited by 56 publications

References 40 publications

Extracting the temperature distribution on a phase-change memory cell during crystallization

Extracting the temperature distribution on a phase-change memory cell during crystallization

A Review : Aspek Termodinamika LiNO3 dalam Larutannya

VO₂‐Based Reconfigurable Antenna Platform with Addressable Microheater Matrix

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High speed, high temperature electrical characterization of phase change materials: metastable phases, crystallization dynamics, and resistance drift

Cited by 56 publications

References 40 publications

Extracting the temperature distribution on a phase-change memory cell during crystallization

Extracting the temperature distribution on a phase-change memory cell during crystallization

A Review : Aspek Termodinamika LiNO3 dalam Larutannya

VO2‐Based Reconfigurable Antenna Platform with Addressable Microheater Matrix

Contact Info

Product

Resources

About

VO₂‐Based Reconfigurable Antenna Platform with Addressable Microheater Matrix