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During the fast switching in Ge2Sb2Te5 phase change memory devices, both the amorphous and fcc crystalline phases remain metastable beyond the fcc and hexagonal transition temperatures respectively. In this work, the metastable electrical properties together with crystallization times and resistance drift behaviour of GST are studied using a high-speed, device-level characterization technique in the temperature range of 300 K to 675 K.

High-temperature characterization of the thermoelectric properties of chalcogenide Ge2Sb2Te5 (GST) is critical for phase change memory devices, which utilize self-heating to quickly switch between amorphous and crystalline states and experience significant thermoelectric effects. In this work, the electrical resistivity and Seebeck coefficient are measured simultaneously as a function of temperature, from room temperature to 600 °C, on 50 nm and 200 nm GST thin films deposited on silicon dioxide. Multiple heating and cooling cycles with increasingly maximum temperature allow temperature-dependent characterization of the material at each crystalline state; this is in contrast to continuous measurements which return the combined effects of the temperature dependence and changes in the material. The results show p-type conduction (S > 0), linear S(T), and a positive Thomson coefficient (dS/dT) up to melting temperature. The results also reveal an interesting linearity between dS/dT and the conduction activation energy for mixed amorphous-fcc GST, which can be used to estimate one parameter from the other. A percolation model, together with effective medium theory, is adopted to correlate the conductivity of the material with average grain sizes obtained from XRD measurements. XRD diffraction measurements show plane-dependent thermal expansion for the cubic and hexagonal phases.

P lasmonic excitations of metallic nanostructures have attracted a great deal of attention in past decades, due to the rich variety of geometric configurations, the associated optical properties and phenomena, and the wide range of present and potential future applications. 1,2 Propagating and localized plasmons have been utilized in the design of photonic structures to efficiently couple free-space propagating light onto highly confined surface modes, resulting in the enhancement of electromagnetic field intensities. Nonlinear optical effects benefit from plasmonic field enhancement, 3,4 and plasmonics has the potential to be an enabling technology for quantum optics and all-optical information processing. 5,6 It has been shown that plasmonic field enhancement allows the observation of Raman scattering from single molecules with low excitation powers down to microwatts. 7,8 The lack of reliability resulting from the spatially non-uniform nature of plasmonic field enhancement can be a problem for applications requiring repeatability. In the case of surfaceenhanced Raman scattering (SERS), regions with high enhancement (so-called hot spots) are typically major contributors to the observed signal. Raman intensity enhancement is estimated through I SERS = I 0 |E(ω exc )E(ω det )/E 0 (ω exc )E 0 (ω det )| 2 , where ω exc and ω det are the excitation and detection frequencies, and E and E 0 are the electric field intensities with and without the presence of plasmonic structures. Defining an enhancement factor, EF(ω) = |E(ω)/E 0 (ω)| 2 , overall Raman enhancement factor can be written as the product of excitation and detection factors, EF SERS = EF(ω exc )EF(ω det ). Spatial nonuniformity of the electric field directly translates into a spatial non-uniformity of EF SERS and can be an important disadvantage for repeatability. Hot spots are typically formed when two metal regions come close (within a few nanometers) to each other, and even periodic structures may display a wide distribution of enhancement factors. 9 In order to achieve high and spatially uniform field enhancement, engineered surfaces that exhibit plasmon modes at both the excitation and scattering wavelengths are needed. 10À13 Previously, metal nanoparticle clusters (bottom-up approach) and sparse structures or biharmonic gratings with however, benefits of strong coupling of dimers have been overlooked. Here, we construct a plasmonic meta-surface through coupling of diatomic plasmonic molecules which contain a heavy and light meta-atom. Presence and coupling of two distinct types of localized modes in the plasmonic molecule allow formation and engineering of a rich band structure in a seemingly simple and common geometry, resulting in a broadband and quasi-omni-directional meta-surface. Surfaceenhanced Raman scattering benefits from the simultaneous presence of plasmonic resonances at the excitation and scattering frequencies, and by proper design of the band structure to satisfy this condition, highly repeatable and spatially uniform Raman enhancement ...

Phase-change memory (PCM) devices are enabled by amorphization-and crystallization-induced changes in the devices' electrical resistances. Amorphization is achieved by melting and quenching the active volume using short duration electrical pulses ($ns). The crystallization (set) pulse duration, however, is much longer and depends on the cell temperature reached during the pulse. Hence, the temperature-dependent crystallization process of the phase-change materials at the device level has to be well characterized to achieve fast PCM operations. A main challenge is determining the cell temperature during crystallization. Here, we report extraction of the temperature distribution on a lateral PCM cell during a set pulse using measured voltage-current characteristics and thermal modelling. The effect of the thermal properties of materials on the extracted cell temperature is also studied, and a better cell design is proposed for more accurate temperature extraction. The demonstrated study provides promising results for characterization of the temperature-dependent crystallization process within a cell. Published by AIP Publishing.