High-Speed InP HBT Technology for Advanced Mixed-signal and Digital Applications

A wideband InP Gilbert-cell mixer using capacitive degeneration and current bleeding technique

“…SiGe-based heterojunction bipolar transistor (HBT) mixers [1,2], SiGe-based BiCMOS mixers [3,4,5,6,7], CMOS-based mixers [8,9,10,11] and mixers based on InP HBT technology [12,13,14,15] were presented. Particularly, InP double heterojunction bipolar transistor (DHBT) has the advantages of outstanding high frequency performance, high electron mobility and high breakdown voltage [16,17], which indicates that InP DHBT is an attractive choice for wideband mixers. Several enhancement techniques have been employed to extend the bandwidth of mixers.…”

Advanced InP HBT Technology at Northrop Grumman Aerospace Systems

“…The high-speed digital devices in this technology have peak performance in the region of 3 to 4 mA/um 2 emitter current density and demonstrate β > 50, f T ≈ 250 GHz and f MAX ≈ 350 GHz. The mixed-signal transistors have peak performance in the region of 1 to 1.5 mA/um 2 emitter current density and demonstrate β > 50, f T ≈ 150 GHz and f MAX ≈ 400 GHz [6]. The HBT structure has an InP emitter with an In-rich, n+ InGaAs cap for low emitter contact resistance.…”

172 GHz divide-by-two circuit using a 0.25-µm InP HBT technology

“…The device contact via process, developed with a highly selective dielectric etch, enables device scaling down to 0.25-m emitter widths at no manufacturing penalty. The remaining active and passive element process steps can be found in [8]. The technology offers Schottky diodes, 0.19 fF/Pm 2 MIM capacitors, and dual precision thin film resistors of 20 and 100 :/.…”