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Northrop Grumman Aerospace Systems (NGAS) has been developing InP-based heterojunction bipolar transistor technology for next generation high performance aerospace, defense and commercial applications. We present highlights and status of our production and advanced InP HBT technologies including ultra-high speed 0.25 micron emitter InP HBT.

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We report an advanced InP/InGaAs double heterojunction bipolar transistor technology using aggressive scaling in device layout and epitaxial stack. The device employs a 220Å highly doped base and a 1200Å collector designed to support current densities in excess of 12 mA/Pm 2 . Transistors with emitter width of 0.25-Pm have exhibited simultaneous measured f T and f max frequencies in the 500 GHz range. Frequency divide-bytwo digital circuits designed and fabricated with this InP bipolar technology have demonstrated maximum clock frequency of 172 GHz. Manufacturing capabilities for mixed-signal circuits of increased complexity are also reported with improvements in resolution and bandwidth.

Static frequency dividers are widely used technology performance benchmark circuits. Using a 0.25 m 530 GHz /600 GHz+ max InP DHBT process, a static frequency divider circuit has been designed, fabricated, and measured to operate up to 200.6 GHz [1]. The divide-by-two core flip-flop dissipates 228 mW. Techniques used for the divider design optimization and for selecting variants to maximize performance across process changes are also discussed.