High-speed InP-InGaAs heterojunction phototransistors employing a nonalloyed electrode metal as a reflector

Fukano, Hideki; Takanashi, Yoshifumi; Fujimoto, Masatomo

doi:10.1109/3.362721

Cited by 23 publications

(15 citation statements)

References 21 publications

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“…[14] A great photocurrent gain can be achieved by this process. The phototransistor optical responsivity (A/W) is calculated to be [15] γ UTC−DHPT = I p /P opt ,…”

Section: Working Mechanism Of Utc-dhptmentioning

confidence: 99%

Analysis on high speed response of a uni-traveling-carrier double hetero-junction phototransistor

Jiang¹,

Xie²,

Zhang³

et al. 2015

Chinese Phys. B

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In this paper, the positive influence of a uni-traveling-carrier (UTC) structure to ease the contract between the responsivity and working speed of the InP-based double hetero-junction phototransistor (DHPT) is illustrated in detail. Different results under electrical bias, optical bias or combined electrical and optical bias are analyzed for an excellent UTC-DHPT performance. The results show that when the UTC-DHPT operates at three-terminal (3T) working mode with combined electrical bias and optical bias in base, it keeps a high optical responsivity of 34.72 A/W and the highest optical transition frequency of 120 GHz. The current gain of the 3T UTC-DHPT under 1.55-μm light illuminations reaches 62 dB. This indicates that the combined base electrical bias and optical bias of 3T UTC-DHPT can make sure that the UTC-DHPT provides high optical current gain and high optical transition frequency simultaneously.

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“…[14] A great photocurrent gain can be achieved by this process. The phototransistor optical responsivity (A/W) is calculated to be [15] γ UTC−DHPT = I p /P opt ,…”

Section: Working Mechanism Of Utc-dhptmentioning

confidence: 99%

Analysis on high speed response of a uni-traveling-carrier double hetero-junction phototransistor

Jiang¹,

Xie²,

Zhang³

et al. 2015

Chinese Phys. B

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show abstract

“…In the present analysis, a P-FFT accelerated solution of the volume-integral equation for scattering from inhomogeneous dielectric objects is used as the example to demonstrate the implementation of parallelization, although it is not limited to this specific case. In detail, the parallel algorithm reported here is based on the message-passing-interface (MPI) environment and can be conveniently transplanted to any platform which supports the MPI protocol [6,7]. Considering the characteristics of the P-FFT algorithm, the parallelization of the algorithm is implemented in a four-step procedure.…”

Section: Introductionmentioning

confidence: 99%

“…In the former, a Fabry-Perot cavity structure was used to acquire multiple reflections [7]. In this arrangement, however, the responsivity was selectively enhanced at resonant wavelengths of the illuminating light.…”

Section: Introductionmentioning

confidence: 99%

Study of optical heterodyne mixing characteristics in an A1InAs/GaInAs transferred‐substrate double heterojunction bipolar transistor

Kwak

Kim

et al. 2004

Micro & Optical Tech Letters

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“…This could also be viewed as an intimate integration of the first amplifier stage with the photodetector, thus eliminating the wire capacitance altogether. Several approaches have been attempted, including Si/Ge and In(Al,Ga)As avalanche photodiodes 17 18 19 20 , field effect phototransistors 21 22 and bipolar junction phototransistors 10 23 24 25 26 27 28 29 30 31 . Avalanche photodiodes with high gain-bandwidth product have been demonstrated 17 18 19 .…”

mentioning

confidence: 99%

“…This allows a higher gain-bandwidth product to be reached at the same DC collector current 43 . While promising gain-bandwidth products have been achieved using III-V based phototransistors with highly scaled geometries, the small size leads to deficient photon absorption 23 26 27 28 30 . Additionally, the high lattice mismatch of InP and GaAs with silicon leads to defective material unsuitable for devices.…”

mentioning

confidence: 99%

Ultrahigh Responsivity-Bandwidth Product in a Compact InP Nanopillar Phototransistor Directly Grown on Silicon

Bhattacharya

Tran

et al. 2016

Sci Rep

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Highly sensitive and fast photodetectors can enable low power, high bandwidth on-chip optical interconnects for silicon integrated electronics. III-V compound semiconductor direct-bandgap materials with high absorption coefficients are particularly promising for photodetection in energy-efficient optical links because of the potential to scale down the absorber size, and the resulting capacitance and dark current, while maintaining high quantum efficiency. We demonstrate a compact bipolar junction phototransistor with a high current gain (53.6), bandwidth (7 GHz) and responsivity (9.5 A/W) using a single crystalline indium phosphide nanopillar directly grown on a silicon substrate. Transistor gain is obtained at sub-picowatt optical power and collector bias close to the CMOS line voltage. The quantum efficiency-bandwidth product of 105 GHz is the highest for photodetectors on silicon. The bipolar junction phototransistor combines the receiver front end circuit and absorber into a monolithic integrated device, eliminating the wire capacitance between the detector and first amplifier stage.

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High-speed InP-InGaAs heterojunction phototransistors employing a nonalloyed electrode metal as a reflector

Cited by 23 publications

References 21 publications

Analysis on high speed response of a uni-traveling-carrier double hetero-junction phototransistor

Analysis on high speed response of a uni-traveling-carrier double hetero-junction phototransistor

Study of optical heterodyne mixing characteristics in an A1InAs/GaInAs transferred‐substrate double heterojunction bipolar transistor

Ultrahigh Responsivity-Bandwidth Product in a Compact InP Nanopillar Phototransistor Directly Grown on Silicon

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