Arbuscular mycorrhizal (AM) fungi form a mutualistic symbiosis with a majority of terrestrial vascular plants. To achieve an efficient nutrient trade with their hosts, AM fungi sense external and internal nutrients, and integrate different hierarchic regulations to optimize nutrient acquisition and homeostasis during mycorrhization. However, the underlying molecular networks in AM fungi orchestrating the nutrient sensing and signaling remain elusive. Based on homology search, we here found that at least 72 gene components involved in four nutrient sensing and signaling pathways, including cAMP-dependent protein kinase A (cAMP-PKA), sucrose non-fermenting 1 (SNF1) protein kinase, target of rapamycin kinase (TOR) and phosphate (PHO) signaling cascades, are well conserved in AM fungi. Based on the knowledge known in model yeast and filamentous fungi, we outlined the possible gene networks functioning in AM fungi. These pathways may regulate the expression of downstream genes involved in nutrient transport, lipid metabolism, trehalase activity, stress resistance and autophagy. The RNA-seq analysis and qRT-PCR results of some core genes further indicate that these pathways may play important roles in spore germination, appressorium formation, arbuscule longevity and sporulation of AM fungi. We hope to inspire further studies on the roles of these candidate genes involved in these nutrient sensing and signaling pathways in AM fungi and AM symbiosis.

Deep Ridge InGaAsP/InP Light Emitting Transistors (LET) with ~1.5 μm light emissions have been fabricated and characterized. In the deep ridge LETs, all the light emissions are from the intrinsic base area, which makes them more suitable for high speed direct modulation. A collector emitter voltage (V CE) dependent output power, which has been predicted numerically, is observed experimentally for the first time and may facilitate the use of LETs in optoelectronic integrations. A novel trend of self-heating related saturation of light power with base current is also observed, which is explained by the three port operation of the device. Further, an abnormal common-emitter current-voltage (I-V) characteristic of the deep ridge LETs is shown and is attributed to the non-radiative recombination centers at the ridge side walls. With the good quality of the quantum wells, laser operation at near room temperature is achieved in the deep ridge LET with 800 μm cavity length. With proper surface passivation techniques and device optimizations, performance of the deep ridge transistor based optoelectronic devices can be further enhanced greatly and ultra low power consumption which is highly desirable can be expected.

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