High-Speed Low-Noise InAs/InAlGaAs/InP 1.55-$\mu{\rm m}$ Quantum-Dot Lasers

Gready, David; Eisenstein, G.; Gilfert, C.; Ivanov, V.; Reithmaier, Johann Peter

doi:10.1109/lpt.2012.2188506

Cited by 33 publications

(17 citation statements)

References 19 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The laser also showed high wavelength stability of 0.078 nm/K measured above room temperature. The dynamic characteristics of this laser was studied by Gready et al [116] who reported small signal modulation bandwidth of 5 GHz and large signal modulation capability of 15 Gbps with 4dB on/off ratio utilizing pseudo random bit sequence (PRBS). This very different response between the small signal and large signal modulations was attributed to the complex and highly nonlinear carrier dynamics of the InAs/InGaAlAs Qdots gain medium.…”

Section: Lasers On (100) Inp Substratementioning

confidence: 99%

Self-assembled InAs/InP quantum dots and quantum dashes: Material structures and devices

Khan

Ooi

2014

Progress in Quantum Electronics

View full text Add to dashboard Cite

The advances in lasers, electronic and photonic integrated circuits (EPIC), optical interconnects as well as the modulation techniques allow the present day society to embrace the convenience of broadband, high speed internet and mobile network connectivity. However, the steep increase in energy demand and bandwidth requirement calls for further innovation in ultra-compact EPIC technologies. In the optical domain, innovation in the laser technologies beyond the current quantum well (Qwell) based laser technologies are already taking place and presenting very promising results. Homogeneously grown quantum dot (Qdot) lasers, can serve in the future energy saving information and communication technologies (ICT) as the work-horse for transmitting information through optical fiber. The encouraging results in the zero-dimensional (0D) structures emitting at 980 nm, in the form of vertical cavity surface emitting laser (VCSEL), are already operational at low threshold current density and capable of 40 Gbps error-free transmission at 108 fJ/bit. Eventual achievements for lasers operating in the O-, C-, L-, U-bands, and beyond will eventually lay the foundation for green ICT. On the hand, the inhomogeneously grown quasi 0D quantum dash (Qdash) lasers are brilliant solutions for potential broadband connectivity in server farms or access network. A single broadband Qdash laser operating in the stimulated emission mode can replace tens of discrete narrow-band lasers in dense wavelength division multiplexing (DWDM) transmission thereby further saving energy, cost and footprint. In this article, we review the progress of both Qdots and Qdash devices based on the InAs/InGaAlAs/InP and InAs/InGaAsP/InP material systems, from the angles of growth and device performance.2

show abstract

Section: Lasers On (100) Inp Substratementioning

confidence: 99%

Self-assembled InAs/InP quantum dots and quantum dashes: Material structures and devices

Khan

Ooi

2014

Progress in Quantum Electronics

View full text Add to dashboard Cite

show abstract

“…By compensating the strain coupling it should be possible to preserve the single QD layer quality also for lasers with multiple-QD layers. In comparison to previously realized QD lasers based on QD material with 31 meV line width and record-high modal gain [3] as well as large signal modulation characteristics [15] the new optimized growth conditions has the potential for nearly doubling the spectral gain, which will further enhance the modal and, respectively, the differential gain in high speed lasers. Fig.…”

Section: Discussionmentioning

confidence: 92%

“…Mainly self-assembled semiconductor QDs formed via Stranski-Krastanov (SK) growth mode have supplied a potent active medium for optoelectronic devices such as laser diodes and light-emitting diodes [1,[3][4][5]. For laser application, it is necessary to establish a high QD density with a homogenous size distribution and most likely round-shaped geometry for optimum 3D confinement.…”

Section: Introductionmentioning

confidence: 99%

High-density 1.54 μm InAs/InGaAlAs/InP(100) based quantum dots with reduced size inhomogeneity

Banyoudeh

Reithmaier

2015

Journal of Crystal Growth

Self Cite

View full text Add to dashboard Cite

“…Therefore, lower threshold current and higher temperature insensitivity besides narrower spectral linewidth can be achieved using QDs in the gain media of semiconductor lasers compared to quantum well (QW) counterparts [5][6][7]. After successful growth of self-M. Sanaee assembled InAs/GaAs(InP) QDs in Stranski-Krastanov (SK) mode with considerable crystal quality and high areal density [8,9], intensive experimental effort has been dedicated to the exploration and realization of the proposed superior performances of QD lasers in the range of 1.3(1.55)µm wavelength [10][11][12][13][14][15]. Although low threshold current at room temperature [11,15] and high modulation bandwidth [10] have been observed in some real 1.3 µm multi-layer InAs/GaAs QD lasers, temperature stability of these laser sources has degraded from the theoretical predictions [16,17].…”

Section: Introductionmentioning

confidence: 99%

Theoretical Modeling of Relative Intensity Noise in p-Doped 1.3-μm InAs/GaAs Quantum Dot Lasers

Sanaee

Zarifkar

2015

J. Lightwave Technol.

View full text Add to dashboard Cite

Theoretical analysis of relative intensity noise (RIN) characteristics of p-doped QD lasers has been presented. By considering dynamics of electrons and holes separately at GaAs barrier, wetting layer (WL), and three discrete QDs levels, twelve rate equations have been linearized in presence of Langevin noise sources. Calculations indicate that RIN level of QD laser reduces slightly through p-doping. Although providing excess holes to WL state decreases shot noise resulted from quantum confined levels and photon noise, the shot noise originated from three and two dimensional carrier densities, respectively inside the barrier and WL states, increases. It is shown that the RIN level declines in pdoped QD lasers by increasing the injection current which is in agreement with a recent experimental report. It is also demonstrated that the RIN level of QD lasers decreases by increasing the number of QD layers and shot noise plays the main role in this reduction.

show abstract

High-Speed Low-Noise InAs/InAlGaAs/InP 1.55-$\mu{\rm m}$ Quantum-Dot Lasers

Cited by 33 publications

References 19 publications

Self-assembled InAs/InP quantum dots and quantum dashes: Material structures and devices

Self-assembled InAs/InP quantum dots and quantum dashes: Material structures and devices

High-density 1.54 μm InAs/InGaAlAs/InP(100) based quantum dots with reduced size inhomogeneity

Theoretical Modeling of Relative Intensity Noise in p-Doped 1.3-μm InAs/GaAs Quantum Dot Lasers

Contact Info

Product

Resources

About