High‐Speed Near Infrared Optical Receivers Based on Ge Waveguide Photodetectors Integrated in a CMOS Process

Masini, G.; Sahni, S.; Capellini, Giovanni; Witzens, Jeremy; Gunn, Cary

doi:10.1155/2008/196572

Cited by 81 publications

(35 citation statements)

References 17 publications

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“…A monolithic integration of Ge photodiodes, Si WGs and a silica-based AWG has been reported as a WDM receiver chip [17,37]. As for the photonic-electronic integration, a photonic receiver chip monolithically integrated with Si electronics such as transimpedance amplifiers has been developed [38]. The chips have been commercially applied to active optical cables for rack-to-rack interconnects in data centers and supercomputers.…”

Section: Electrical Characteristics Of Ge Pin Diodes On Simentioning

confidence: 99%

Ge-on-Si photonic devices for photonic-electronic integration on a Si platform

Ishikawa

Saito

2014

IEICE Electron. Express

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Section: Electrical Characteristics Of Ge Pin Diodes On Simentioning

confidence: 99%

Ge-on-Si photonic devices for photonic-electronic integration on a Si platform

Ishikawa

Saito

2014

IEICE Electron. Express

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“…They can also serve as waveguide photodetectors in which the long cavity (absorption length) allows the efficient collection of photons [9]. Meanwhile, microdisk type devices are attractive for laser integration with planar Si or Ge based photonics.…”

Section: Germanium-tin Lasersmentioning

confidence: 99%

Direct bandgap GeSn alloys for laser application

Buca

Wirths

Stange

et al. 2015

Advanced Photonics 2015

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“…A photodiode with a worst case responsivity of 0.7 A/W gives approximately 20 A of average input current at 15-dBm photo-intensity [39], [40]. Because we expect a transmit extinction ratio of 6 dB, the worst case signal swing is from 8 to 32 A or about 12 A of single-ended swing.…”

Section: Tia Designmentioning

confidence: 99%

10-Gbps, 5.3-mW Optical Transmitter and Receiver Circuits in 40-nm CMOS

Liu

Patil

Lexau

et al. 2012

IEEE J. Solid-State Circuits

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We describe transmitter and receiver circuits for a 10-Gbps single-ended optical link in a 40-nm CMOS technology. The circuits are bonded using low-parasitic micro-solder bumps to silicon photonic devices on a 130-nm SOI platform. The transmitter drives oval resonant ring modulators with a 2-V swing and employs static thermal tuners to compensate for optical device process variations. The receiver is based on a transimpedance amplifier (TIA) with 4-k gain and designed for an input power of 15 dBm, a photodiode responsivity of 0.7 A/W, and an input extinction ratio of 6 dB. It employs a pair of interleaved clocked sense-amplifiers for voltage slicing and uses a DLL with phase adjustment for centering the clock in the data eye. Periodic calibration allows for adjustment of both voltage and timing margins. At 10 Gbps, the transmitter extinction ratio exceeds 7 dB and, excluding thermal tuning and laser power, it consumes 1.35 mW. At the same datarate, the receiver consumes 3.95 mW. On-chip PRBS generators and checkers with sequences confirm operation at a BER better than .

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High‐Speed Near Infrared Optical Receivers Based on Ge Waveguide Photodetectors Integrated in a CMOS Process

Abstract: We discuss our approach to monolithic intergration of Ge photodectors with CMOS electronics for high-speed optical transceivers. Receivers based on Ge waveguide photodetectors achieve a sensitivity of −14.2 dBm (10−12 bit error rate (BER)) at 10 Gbps and 1550 nm.

Cited by 81 publications

References 17 publications

Ge-on-Si photonic devices for photonic-electronic integration on a Si platform

Ge-on-Si photonic devices for photonic-electronic integration on a Si platform

Direct bandgap GeSn alloys for laser application

10-Gbps, 5.3-mW Optical Transmitter and Receiver Circuits in 40-nm CMOS

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