High speed optical gate driver for wide band gap power transistors

Colin, Davy; Rouger, Nicolas

doi:10.1109/ecce.2016.7855156

Cited by 6 publications

(5 citation statements)

References 8 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…This second approach is superior to the first in terms of low power losses. As per Equation (1), the difference between V grmax and V th will be at its highest to maximize the current slew rate during turn-on. In order to reduce the high-speed of dv/dt and or di/dt of the GaN switch, an AGVC can adjust the gate driver supply voltage V gr dynamically.…”

Section: Open-loop Active Gate Voltage Control During Turn-onmentioning

confidence: 99%

“…The high losses generated by the elements are one of the drawbacks that make the passive control method less interestin The active control method is achieved by adjusting the electrical parameters of the driv such as the maximum gate supply voltage (Vgrmax) and the gate maximum current (Igma This second approach is superior to the first in terms of low power losses. As per equatio (1), the difference between Vgrmax and Vth will be at its highest to maximize the current sle rate during turn-on. In order to reduce the high-speed of dv/dt and or di/dt of the Ga switch, an AGVC can adjust the gate driver supply voltage Vgr dynamically.…”

Section: Open-loop Active Gate Voltage Control During Turn-onmentioning

confidence: 99%

“…Very high frequency operation capabilities of wide band-gap semiconductor devices (such as GaN and SiC) made them good candidates for high efficiency of static converter [1][2][3][4][5]. However, the safe operation of the devices in converters degrades during very fast transitions of both current and voltage [6][7][8].…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Active Gate Driver and Management of the Switching Speed of GaN Transistors during Turn-On and Turn-Off

et al. 2021

View full text Add to dashboard Cite

The paper investigates the management of drain voltage and current slew rates (i.e., dv/dt and di/dt) of high-speed GaN-based power switches during the transitions. An active gate voltage control (AGVC) is considered for improving the safe operation of a switching cell. In an application of open-loop AGVC, the switching speeds vary significantly with the operating point of the GaN HEMT on either or both current and temperature. A closed-loop AGVC is proposed to operate the switches at a constant speed over different operating points. In order to evaluate the reduction in the electromagnetic disturbances, the common mode currents in the system were compared using the active and a standard gate voltage control (SGVC). The closed-loop analysis carried out in this paper has shown that discrete component-based design can introduce limitations to fully resolve the problem of high switching speeds. To ensure effective control of the switching operations, a response time fewer than 10 ns is required for this uncomplex closed-loop technique despite an increase in switching losses.

show abstract

Section: Open-loop Active Gate Voltage Control During Turn-onmentioning

confidence: 99%

Section: Open-loop Active Gate Voltage Control During Turn-onmentioning

confidence: 99%

See 1 more Smart Citation

Active Gate Driver and Management of the Switching Speed of GaN Transistors during Turn-On and Turn-Off

et al. 2021

View full text Add to dashboard Cite

show abstract

“…Gate drivers must provide, at least, communications functions and power supply functions . For communications functions , coreless transformers solutions [10], optical solutions [11], classical transformer solutions [12] and even giant magneto impedance material based material solution [13] are proposed in the literature. For the power supply functions , coreless transformers solutions [14] and classical transformer solutions [15] are widely used.…”

Section: Introductionmentioning

confidence: 99%

Insulated power supply for gate drivers up to 40 kV for medium‐voltage direct current applications

Sarrazin

Hanna

Lefranc

et al. 2017

IET Power Electronics

View full text Add to dashboard Cite

The proposed study is about the design and experimental results of a power supply for gate drivers that can sustain 40 kV of insulation voltage with a parasitic capacitance of 4 pF. The first section focuses on insulation materials suitable for medium voltage capabilities and therefore to justify the use of polyesterimide and Teflon polytetrafluoroethylene materials. In a second step, experimental results are provided to guaranty that with a thickness of 1 mm of the insulation material, an insulation voltage of 40 kV is provided. Then, a DC-DC converter based on a series-series topology is designed and lead to a physical prototype of 5 W. The measured parasitic capacitance is 4 pF between the primary and the secondary sides.

show abstract

“…Finally, a fourth disadvantage is the high frequency induced common mode and differential mode current in the switching node [5]. Consequently, the common mode transient immunity (CMTI) of isolation barriers must comply with higher dv/dt values [19]. Among all the possible ways to control the dv/dt of a power transistor, several options emulate a CGD external capacitance.…”

mentioning

confidence: 99%

CMOS Active Gate Driver for Closed-Loop dv/dt Control of GaN Transistors

Baú

Cousineau

Cougo³

et al. 2020

IEEE Trans. Power Electron.

Self Cite

View full text Add to dashboard Cite

HAL is a multi-disciplinary open access archive for the deposit and dissemination of scientific research documents, whether they are published or not. The documents may come from teaching and research institutions in France or abroad, or from public or private research centers. L'archive ouverte pluridisciplinaire HAL, est destinée au dépôt et à la diffusion de documents scientifiques de niveau recherche, publiés ou non, émanant des établissements d'enseignement et de recherche français ou étrangers, des laboratoires publics ou privés.

show abstract

High speed optical gate driver for wide band gap power transistors

Cited by 6 publications

References 8 publications

Active Gate Driver and Management of the Switching Speed of GaN Transistors during Turn-On and Turn-Off

Active Gate Driver and Management of the Switching Speed of GaN Transistors during Turn-On and Turn-Off

Insulated power supply for gate drivers up to 40 kV for medium‐voltage direct current applications

CMOS Active Gate Driver for Closed-Loop dv/dt Control of GaN Transistors

Contact Info

Product

Resources

About