High-speed resonant-cavity-enhanced silicon photodetectors on reflecting silicon-on-insulator substrates

Emsley, M.K.; Dosunmu, O.; Ünlü, M. Selim

doi:10.1109/68.992597

Cited by 101 publications

(56 citation statements)

References 8 publications

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“…14 While there have been reports of multilayer silicon-oninsulator ͑SOI͒ wafers, 15 there have been few efforts on purposely manufactured reflecting substrates. Ishikawa et al 16,17 used a combination of separation by implantation of oxygen ͑SIMOX͒ and epitaxy to develop a DBR with a peak reflectance of 90%.…”

Section: 4mentioning

confidence: 99%

“…Discrete Si-RCE photodetectors have previously been fabricated with 40% quantum efficiency at 860 nm, an impulse response FWHM of 25 ps, and a 3 dB bandwidth in excess of 10 GHz. 5 An important figure of merit for high speed photodetectors is the bandwidth efficiency ͑BWE͒ product. That is, the transit time of the photogenerated carriers must be kept to a minimum while the absorption length must be sufficiently long so that a reasonable number of photons are absorbed and, in turn, carriers generated.…”

Section: 4mentioning

confidence: 99%

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High-speed Si resonant cavity enhanced photodetectors and arrays

Ünlü

Emsley

Dosunmu

et al. 2004

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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Over the past decade a new family of optoelectronic devices has emerged whose performance is enhanced by placing the active device structure inside a Fabry-Perot resonant microcavity ͓P. E. Green, IEEE Spectrum 13 ͑2002͔͒. The increased optical field allows photodetectors to be made thinner and therefore faster, while simultaneously increasing the quantum efficiency at the resonant wavelengths. We have demonstrated a variety of resonant cavity enhanced ͑RCE͒ photodetectors in compound semiconductors ͓B. Yang, J. D. Schaub, S. M. Csutak, D. J. Rogers, and J. C. Campbell, IEEE Photonics Technol. Lett. 15, 745 ͑2003͔͒ and Si ͓M. K. Emsley, O. I. Dosunmu, and M. S. Ü nlü, IEEE J. Selected Topics Quantum Electron. 8, 948 ͑2002͔͒, operating at optical communication wavelengths ranging from 850 nm to 1550 nm. The focus of this article is on Si photodetectors and arrays. High bandwidth short distance communications standards are being developed based on parallel optical interconnect fiber arrays to meet the needs of increasing data rates of interchip communication in modern computer architecture. To ensure that this standard becomes an attractive option for computer systems, low cost components must be implemented on both the transmitting and receiving end of the fibers. To meet this low cost requirement silicon based receiver circuits are the most viable option, however, high speed, high efficiency silicon photodetectors present a technical challenge. Commercially reproducible silicon wafers with a high reflectance buried distributed Bragg reflector ͑DBR͒ have been designed and fabricated ͓M. K. Emsley, O. I. Dosunmu, and M. S. Ü nlü, IEEE J. Selected Topics Quantum Electron. 8, 948 ͑2002͔͒. The substrates consist of a two-period, 90% reflecting, DBR fabricated using a double silicon-on-insulator ͑SOI͒ process. Resonant-cavity-enhanced ͑RCE͒ Si photodetectors have been fabricated with 40% quantum efficiency at 850 nm and a FWHM of 29 ps suitable for 10 Gbps data communications. Recently, 1ϫ12 photodetector arrays have been fabricated, packaged, and tested with silicon based amplifiers to demonstrate the feasibility of a low cost solution for optical interconnects.

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Section: 4mentioning

confidence: 99%

Section: 4mentioning

confidence: 99%

High-speed Si resonant cavity enhanced photodetectors and arrays

Ünlü

Emsley

Dosunmu

et al. 2004

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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“…The substrates consist of a two-period, 90% reflecting, DBR fabricated using a double silicon-on-insulator (SOI) process. Discrete Si-RCE photodetectors have previously been fabricated with 40% quantum efficiency at 860 nm, a FWHM of 25 ps, and a 3dB bandwidth in excess of 10 GHz [6].…”

Section: Introductionmentioning

confidence: 99%

Silicon resonant-cavity-enhanced photodetector arrays for optical interconnects

et al. 2003

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High bandwidth short distance communications standards are being developed based on parallel optical interconnect fiber arrays to meet the needs of increasing data rates of inter-chip communication in modern computer architecture. To ensure that this standard becomes an attractive option for computer systems, low cost components must be implemented on both the transmitting and receiving end of the fibers. To meet this low cost requirement silicon based receiver circuits are the most viable option, however, manufacturing high speed, high efficiency silicon photodetectors presents a technical challenge. Resonant cavity enhanced (RCE) Si photodetectors have been shown to provide the required bandwidth-efficiency product and we have recently developed a method to reproduce them through commercially available fabrication techniques. In this work, commercially reproducible silicon wafers with a 90% reflectance buried distributed Bragg reflector (DBR) are used to create Si-RCE photodetector arrays for optical interconnects. The Si-RCE photodetectors have 40% quantum efficiency at 860 nm, a FWHM of 25 ps, and a 3dB bandwidth in excess of 10 GHz. We also demonstrate Si-RCE 12x1 photodetector arrays that have been fabricated and packaged with silicon based amplifiers to demonstrate the feasibility of a low cost monolithic silicon photoreceiver array.

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“…6 In a resonant cavity enhanced (RCE) configuration, a multiple-pass photodetection scheme is created, which effectively reduces the absorbing region thickness required to obtain a given QE at a particular wavelength, in turn enhancing the device bandwidth. For example, an RCE Si-based vertical PIN photodetector has been recently demonstrated, 2 where a 2 µm thick Si active region is epitaxially grown on a distributed Bragg reflector (DBR) consisting of two periods of Si/SiO 2 , or double-SOI (DSOI), optimized for high reflectivity over a broad range of wavelengths centered at 850 nm. At 850 nm, this photodetector exhibited a QE of 40%, with a 3dB bandwidth in excess of 10 GHz.…”

Section: Motivation and Designmentioning

confidence: 99%

“…As a result, silicon-based optoelectronics, photodetectors in particular, have received widespread attention. Although major strides have been made in designing Si-based photodetectors for short-haul (850 nm) operation, 1,2 long-haul operation based around the 1.3 -1.55 µm wavelength range still poses a great challenge. The complete transparency of silicon at wavelengths beyond 1.1 µm makes it unsuited for photodetection around the 1.3 -1.55 µm wavelength range.…”

Section: Introductionmentioning

confidence: 99%

Germanium on double-SOI photodetectors for 1550 nm operation

Dosunmu

Emsley

Cannon³

et al.

The 16th Annual Meeting of the IEEE Lasers and Electro-Optics Society, 2003. LEOS 2003.

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We have fabricated and characterized the first resonant cavity enhanced (RCE) germanium photodetectors on double silicon-on-insulator substrates (Ge/DSOI) for operation around the 1550 nm communication wavelength. The Ge layer is grown through a novel two-step UHV/CVD process, while the underlying double-SOI substrate is formed through an ion-cut process. Absorption measurements of an undoped Ge-on-Si (Ge/Si) structure reveal a red-shift of the Ge absorption edge in the NIR, due primarily to a strain-induced bandgap narrowing within the Ge film. By using the strained-Ge absorption coefficients extracted from the absorption measurements, in conjunction with the known properties of the DSOI substrate, we were able to design strained-Ge/DSOI photodetectors optimized for 1550 nm operation. We predict a quantum efficiency of 76% at 1550 nm for a Ge layer thickness of only 860 nm as a result of both strain-induced and resonant cavity enhancement, compared to 2.3% for the same unstrained Ge thickness in a single-pass configuration. We also estimate a transit-time limited bandwidth of 28 GHz. Although the fabricated Ge/DSOI photodetectors were not optimized for 1550 nm operation, we were able to demonstrate an over four-fold improvement in the quantum efficiency, compared to its single-pass counterpart.

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High-speed resonant-cavity-enhanced silicon photodetectors on reflecting silicon-on-insulator substrates

Cited by 101 publications

References 8 publications

High-speed Si resonant cavity enhanced photodetectors and arrays

High-speed Si resonant cavity enhanced photodetectors and arrays

Silicon resonant-cavity-enhanced photodetector arrays for optical interconnects

Germanium on double-SOI photodetectors for 1550 nm operation

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