High-speed resonant gate driver with controlled peak gate voltage for silicon carbide MOSFETs

Anthony, Philip; McNeill, Neville; Holliday, Derrick

doi:10.1109/ecce.2012.6342520

Cited by 25 publications

(11 citation statements)

References 12 publications

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“…All of these papers indicate that the primary method available to designers for managing the natural ring-down phenomenon is the reduction of switching speed. Indeed, two additional papers go so far as to claim that the aggregate inductance of the gate loop establishes a practical limit to the switching frequency achievable in hard-switched applications [22], [23]. This is an important observation, as it reinforces the claim that high switching speed brings with it increased risk to the occurrence of various switching anomalies, of which self-sustained oscillation is an example.…”

Section: Literature Reviewmentioning

confidence: 80%

Instability in Half-Bridge Circuits Switched With Wide Band-Gap Transistors

Lemmon

Mazzola

Gafford

et al. 2014

IEEE Trans. Power Electron.

142

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Wide band-gap (WBG) field-effect devices are known to provide a system-level performance benefit compared to silicon devices when integrated into power electronics applications. However, the near-ideal features of these switching devices can also introduce unexpected behavior in practical systems due to the presence of parasitic elements. The occurrence of self-sustained oscillation is one such behavior that has not received adequate study in the literature. This paper provides an analytical treatment of this phenomenon by casting the switching circuit as an unintentional negative resistance oscillator. This treatment utilizes an established procedure from the oscillator design literature and applies it to the problem of power circuit oscillation. A simulation study is provided to identify the sensitivity of the model to various parameters, and the predictive value of the model is confirmed by experiment involving two exemplary WBG devices: a SiC vertical-channel JFET and a SiC lateral-channel MOSFET. The results of this study suggest that susceptibility to self-sustained oscillation is correlated to the available power density of the device relative to the parasitic elements in the circuit, for which wide band-gap devices, to include SiC and GaN transistors, are in a class approaching that of the radio frequency domain.

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Section: Literature Reviewmentioning

confidence: 80%

Instability in Half-Bridge Circuits Switched With Wide Band-Gap Transistors

Lemmon

Mazzola

Gafford

et al. 2014

IEEE Trans. Power Electron.

142

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“…Several novel methods have been investigated to move a portion of the gate driver circuitry closer to the power devices [74], [75]. The most broadly applicable methods, however, will move the gate driver directly inside the package with the power device, as shown in Fig.…”

Section: Integrated Circuitsmentioning

confidence: 99%

Wide Bandgap Technologies and Their Implications on Miniaturizing Power Electronic Systems

Mantooth

Glover

Shepherd

2014

IEEE J. Emerg. Sel. Topics Power Electron.

214

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The current state of wide bandgap device technology is reviewed and its impact on power electronic system miniaturization for a wide variety of voltage levels is described. A synopsis of recent complementary technological developments in passives, integrated driver, and protection circuitry and electronic packaging are described, followed by an outline of the applications that stand to be impacted. A glimpse into the future based on the current technological trends is offered.Index Terms-Gallium nitride (GaN), power electronics, power integrated circuits, power semiconductor devices, silicon carbide (SiC), wide bandgap semiconductors.

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“…The negative low-state gate voltage (-5V) is used to provide the margin of preventing the potential shoot-through failure caused by the induced spurious gate voltage. The high-state gate voltage should be as high as possible while within the maximum rated gate voltage, to minimize the conduction losses of SiC MOSFETs [17], and +20V is selected.…”

Section: Designed Split Output Converter and Measurement Equipmentmentioning

confidence: 99%

Performance Evaluation of Split Output Converters With SiC MOSFETs and SiC Schottky Diodes

Yan

Yuan

Geng

et al. 2017

IEEE Trans. Power Electron.

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General rightsThis document is made available in accordance with publisher policies. Please cite only the published version using the reference above. Full terms of use are available: http://www.bristol.ac.uk/pure/userguides/explore-bristol-research/ebr-terms/ This work is licensed under a Creative Commons Attribution 3.0 License. For more information, see Abstract-The adoption of silicon carbide (SiC)MOSFETs and SiC Schottky diodes in power converters promises a further improvement of the attainable power density and system efficiency, while it is restricted by several issues caused by the ultra-fast switching, such as phase-leg shoot-through ('crosstalk' effect), high turn-on losses, electromagnetic interference (EMI), etc. This paper presents a split output converter which can overcome the limitations of the standard two-level voltage source converters when employing the fast-switching SiC devices. A mathematical model of the split output converter has been proposed to reveal how the split inductors can mitigate the crosstalk effect caused by the high switching speed. The improved switching performance (e.g. lower turn-on losses) and EMI benefit have been demonstrated experimentally. The current freewheeling problem, the current pulses and voltage spikes of the split inductors, and the disappeared synchronous rectification are explained in detail both experimentally and analytically. The results show that, the split output converter can have lower power device losses compared with the standard two-level converter at high switching frequencies. However, the extra losses in the split inductors may impair the efficiency of the split output converter, which is verified by experiments in the continuous operating mode. A 95.91% efficiency has been achieved by the split output converter at the switching frequency of 100kHz with suppressed crosstalk, lower turnon losses, and reduced EMI.Index Terms-Silicon carbide (SiC), split output converters, crosstalk, efficiency, electromagnetic interference (EMI).

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High-speed resonant gate driver with controlled peak gate voltage for silicon carbide MOSFETs

Cited by 25 publications

References 12 publications

Instability in Half-Bridge Circuits Switched With Wide Band-Gap Transistors

Instability in Half-Bridge Circuits Switched With Wide Band-Gap Transistors

Wide Bandgap Technologies and Their Implications on Miniaturizing Power Electronic Systems

Performance Evaluation of Split Output Converters With SiC MOSFETs and SiC Schottky Diodes

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