High Speed Response in Optoelectronic Gated Thyristor

Tashiro, Y.; Kasahara, K.; Hamao, N.; Sugimoto, M.; Yanase, T.

doi:10.1143/jjap.26.l1014

Cited by 27 publications

(3 citation statements)

References 4 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The expressions of current densities obtained from Eqs. (11), (12), (13) are written in the form: Here we apply one of the main assumptions of our consideration: the in-plane conductivity of base I is much greater than that of base II which depends on the electron concentration n(x). This fact allows us to neglect the gate current which branches off into base II.…”

Section: Model and Equations Stationary Theorymentioning

confidence: 99%

“…Usually the value of w I + w II does not exceed 0.20.3 µm while the initial length of the ON-region is rarely less than 10 µm. Detailed descriptions of the LE and L pnpn-diodes (having different names) with gated either p-or n-bases, are presented in [10][11][12][13][14][15][16]. For such structures the strong inequality 2a 0 >>w I + w II admits regimes with the width of the ON/ OFF-junction which is also much greater than w I + w II .…”

mentioning

confidence: 99%

See 1 more Smart Citation

Switching waves in asymmetric thyristor-like structures for incomplete gate turn off regime

Gribnikov¹

1998

Semicond. Phys. Quantum Electron. Optoelectron.

View full text Add to dashboard Cite

I.Introduction This paper is devoted to the control of the currentconducting region in a thyristor-like structure. Here, as well as before [1, 2] we refer to TLS as a certain P + npN + structure where two outer layers provide effective injection of their majority carriers into two inner layers (bases). One of the bases (base I) is gated. The gate transfers the controlling current into the base. This current squeezes the current-conducting region (the ON-region in fig. 1), and enlarges the OFF-region. The gated base is usually highly conducting in comparison with the second base (base II). In silicon controlled rectifiers (SCRs) [3], the gate current just turns the TLS on and off, while in lightemitting (LE) and lasing (L) thyristors the gate current can also control (or modulate) light emission [4, 5]. That is why we are interested in characteristics of stationary control of the ON-region (the position of the layer between the ON-and OFF-regions, called the ON/OFF-junction) as well as the speed of the ON/OFF-junction in the TLS. Our further consideration is based on the fact that the typical structures of LE thyristors [6, 7, 8] differ greatly from the structures of SCRs. LE thyristors should not

show abstract

Section: Model and Equations Stationary Theorymentioning

confidence: 99%

mentioning

confidence: 99%

Switching waves in asymmetric thyristor-like structures for incomplete gate turn off regime

Gribnikov¹

1998

Semicond. Phys. Quantum Electron. Optoelectron.

View full text Add to dashboard Cite

show abstract

“…Light triggering of semiconductor devices [1] enabled numerous applications with optical triggering of GaAs and Si thyristors used for synchronization of power lasers, driving exsimer lasers, and electrical insulation of high-power rectifiers [2][3][4][5][6][7]. Optical switch-on of a silicon carbide thyristor has been demonstrated for the first time in [8,9].…”

Section: Introductionmentioning

confidence: 99%