High-Speed Silicon Photonics Modulators

Witzens, Jeremy

doi:10.1109/jproc.2018.2877636

Cited by 194 publications

(116 citation statements)

References 114 publications

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“…The second row shows the total RF loss  In (a) the RF loss is low and frequency-independent, see Eq. (17). In (b) and (c) losses in the resistive slab are increased and the losses becomes strongly frequency-dependent, see Eq.…”

Section: For All Slot Capacitances Smentioning

confidence: 98%

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Verified equivalent-circuit model for slot-waveguide modulators

Zwickel¹,

Wuensch²,

Kieninger³

et al. 2020

Opt. Express

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We formulate and experimentally validate an equivalent-circuit model based on distributed elements to describe the electric and electro-optic (EO) properties of travellingwave silicon-organic hybrid (SOH) slot-waveguide modulators. The model allows to reliably predict the small-signal EO frequency response of the modulators exploiting purely electrical measurements of the frequency-dependent RF transmission characteristics. We experimentally verify the validity of our model, and we formulate design guidelines for an optimum trade-off between optical loss due to free-carrier absorption (FCA), electro-optic bandwidth, and π-voltage of SOH slot-waveguide modulators.

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Section: For All Slot Capacitances Smentioning

confidence: 98%

“…leads to a strong increase of the total loss with frequency. At frequencies RF value, see Eq (17). and Eq (20)…”

mentioning

confidence: 99%

Verified equivalent-circuit model for slot-waveguide modulators

Zwickel¹,

Wuensch²,

Kieninger³

et al. 2020

Opt. Express

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“…Thus, SiP MZM have to rely on phase shifters that exploit the plasma dispersion effect, e.g., by means of reverse-biased pn-junctions that are integrated into the optical waveguides. To increase the efficiency of these phase shifters, high doping concentrations are needed, which increases the optical loss [5]. This trade-off leads to rather high loss-efficiency products, which amount to, e.g., aUπL = 5.8 VdB for best-in-class depletion-type phase shifters, which still feature substantial UπL products of 4.6 Vmm [6].…”

Section: Introductionmentioning

confidence: 99%

Silicon-organic hybrid (SOH) Mach-Zehnder modulators for 100 GBd PAM4 signaling with sub-1 dB phase-shifter loss

et al. 2020

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We report on compact and efficient silicon-organic hybrid (SOH) Mach-Zehnder modulators (MZM) with low phase shifter insertion loss of 0.7 dB. The 280 µm-long phase shifters feature a π-voltage-length product of 0.41 Vmm and a loss-efficiency product as small as aUπL = 1.0 VdB. The device performance is demonstrated in a data transmission experiment, where we generate on-off-keying (OOK) and four-level pulse-amplitude modulation (PAM4) signals at symbol rates of 100 GBd, resulting in line rates of up to 200 Gbit/s. Bit error ratios are below the threshold for hard-decision forward error correction (HD-FEC) with 7 % coding overhead, leading to net data rates of 187 Gbit/s. This is the highest PAM4 data rate ever achieved for a sub-1 mm silicon photonic MZM.

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“…Due to the absence of an efficient electro-optic effect in bulk silicon [7], the majority of all-silicon modulators utilize the free carrier plasma-dispersion effect as the modulation mechanism, typically realized in a reverse biased pn junction for high speed operation [8]. Two main configurations have been extensively used to employ this effect in silicon modulators, both offering high data rates and acceptable insertion losses [8,9]: 1) Travelling wave Mach-Zehnder modulators (TW-MZMs), and 2) ring resonator modulators (RRMs). The RF power consumption of RRMs (and more generally resonance based modulators) can be orders of magnitude lower than TW-MZMs, as it is reduced by a factor scaling with the finesse (F) of the resonance.…”

Section: Introductionmentioning

confidence: 99%

Power-efficient lumped-element meandered silicon Mach-Zehnder modulators

Azadeh

Nojić

Moscoso-Mártir

et al. 2020

Silicon Photonics XV

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Driving electro-optic modulators in lumped-element (LE) configuration allows for small footprint, reduced power consumption, and improved high-speed performance. The main shortcoming of conventional rectilinear LE modulators are the required high drive-voltages, resulting from their shortened phase-shifters. To address this, we introduce a Mach-Zehnder modulator with meandered phase shifters (M-MZM), which can be driven in LE configuration, while keeping the optical phase shifter length in the same order as traveling-wave modulators (TW-MZMs). A design limitation that needs to be taken into account consists in the optical transit time of the device, that limits the overall electro-optic bandwidth. First, we review the overall power consumption improvement as well as the bandwidth enhancement in LE modulators compared to TW-MZMs, also taking the driver output impedance and parasitics from wire-or bump-bonds into account. Then, we report on the design, implementation, and experimental characterization of carrier-depletion based M-MZMs fabricated on silicon-on-insulator (SOI) wafers using standard CMOS-compatible processes. The fabricated M-MZMs, provided with low (W1), moderately (W2) and highly (W3) doped junctions, require 9.2 Vpp, 5.5 Vpp, and 3.7 Vpp for full extinction, with optical insertion losses of 5 dB, 6.3 dB and 9.1 dB. For all three M-MZMs, open eye diagrams are recorded at 25 Gb/s using a 50 Ω driver and termination. For unterminated M-MZMs, higher data rates could be achieved, provided that a low output impedance driver be wire-or bump-bonded to the modulators. Finally, we compare the power consumption of the M-MZMs with TW-MZMs and show that the M-MZMs feature a 4X reduced power consumption at 25 Gb/s.

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High-Speed Silicon Photonics Modulators

Cited by 194 publications

References 114 publications

Verified equivalent-circuit model for slot-waveguide modulators

Verified equivalent-circuit model for slot-waveguide modulators

Silicon-organic hybrid (SOH) Mach-Zehnder modulators for 100 GBd PAM4 signaling with sub-1 dB phase-shifter loss

Power-efficient lumped-element meandered silicon Mach-Zehnder modulators

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