High Speed Unipolar Switching Resistance RAM (RRAM) Technology

Hosoi, Yasunari; Tamai, Yasukatsu; Ohnishi, T.; Ishihara, Kengo; Shibuya, T.; Inoue, Yasuo; Yamazaki, S.; Nakano, Takao; Ohnishi, Shigeo; Awaya, Nobuyoshi; Inoue, Isao; Shima, Hisashi; Akinaga, Hiroyuki; Takagi, H.; Akoh, H.; Tokura, Y.

doi:10.1109/iedm.2006.346732

Cited by 73 publications

(38 citation statements)

References 3 publications

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“…Such metallic conducting channels, called conducting filaments, have been identified in various binary metal oxide systems where unipolar-type resistive switching is observed. [30][31][32][33] However, if a modification in the potential configuration at the heterojunction interface plays a key role in determining the observed resistive switching phenomena, temperature dependences of the LRS and the HRS are expected to show a similar transport to that observed in metal-insulator-metal structures. Figure 4 shows the measured temperature (T) dependences of the normalized resistance (R/R max ) in different resistance states.…”

Section: Author(s) All Article Content Except Where Otherwise Notedmentioning

confidence: 99%

Reversible conductance switching characteristics in a polymer-In2O3 nanocrystals junction

Kim

Lee

et al. 2014

AIP Advances

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A transparent polymer-based resistive switching device containing In2O3 nanocrystals (NCs) is fabricated, and its nonvolatile memory characteristics are evaluated. Very clear reversible counter-clockwise bipolar-type resistive switching phenomena are observed. Stable retention is demonstrated. An Analysis of the temperature dependence of the bistable resistance states reveals additional features, not reported in previous studies, that the observed resistance switching is due to oxygen ions drift-induced redox reactions at the polymer/In2O3 NCs interface. The RESET and SET switching times (τRESET and τSET), which are defined as pulse widths extrapolated by the steepest slopes in the transition region, are τRESET ∼ 550 nsec and τSET ∼ 900 nsec. The authors propose that microscopic potential modification occurring near the polymer/In2O3 NCs boundaries plays a key role in determining resistive switching properties.

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Section: Author(s) All Article Content Except Where Otherwise Notedmentioning

confidence: 99%

Reversible conductance switching characteristics in a polymer-In2O3 nanocrystals junction

Kim

Lee

et al. 2014

AIP Advances

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“…However, data retention for unipolar operation of metal oxide RRAM is far worse than Flash memories and their cycling endurance is < 100 cycles [1][2][3]. Recently, we reported a self-aligned, graded oxidation WOx RRAM4 that shows excellent performance and reliability under bipolar operation conditions.…”

Section: Introductionmentioning

confidence: 99%

Unipolar Switching Characteristics for Self-Aligned WO<inf>x</inf> Resistance RAM (R-RAM)

Chien

Lai

Chang

et al. 2008

2008 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA)

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For the first time a unipolar resistance memory with good performance and reliability is demonstrated. A short (20-50ns) positive pulse switches the WO, film from low resistance state (LRS) to high resistance state (HRS), while a longer (200-500ns) positive pulse switches the film from HRS to LRS. Negative pulses, on the other hand, do not produce reversible resistivity changes. Despite the low energy switching, both LRS and HRS are very stable, capable of withstanding 2,500 hours of baking at up to 150°C. Furthermore, the WO, R-RAM can withstand > 1,000 cycles of LRS/HRS switching, and the device is also highly immune to read disturb. This unipolar device is promising for future 3D high-density NVM storage.

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“…Various successes in raising a performance of Resistive Random Access Memory (ReRAM) such as lowering the switching current [1,2] and the improvement of the switching speed [3,4] were attained. For all these advances, the argument on a mechanism of resistance change effect has not been settled yet.…”

Section: Introductionmentioning

confidence: 99%

Mechanism of resistive memory effect in Ga doped ZnO thin films

Kinoshtia

Hinoki

Yazawa³

et al. 2010

Phys. Status Solidi (c)

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A hypothesis based on the model which explains the resistance change effect of resistive random access memory (ReRAM) by redox reaction is proposed. This hypothesis leads a conclusion that the relation between the polarity of the applied bias voltage and the caused resistance change in p ‐type semiconductors is opposite to that in n ‐type. Bias polarity dependence of resultant resistance change of ZnO and Ga‐doped ZnO (GZO), which are n ‐type semiconductors, were investigated using conducting atomic force microscope (C‐AFM). It was clarified that the opposite bias polarity is required to make GZO and NiO into the same resistance state, consistent with our hypothesis. In addition, enhancement of the resistance change effect by increasing Joule heating was observed. The present work also suggested that controlling the local carrier concentration of oxide films by application of localized strong electric field is possible. This technology might enable the fabrication of not only memory devices but also new nano‐scale electronic devices (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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High Speed Unipolar Switching Resistance RAM (RRAM) Technology

Cited by 73 publications

References 3 publications

Reversible conductance switching characteristics in a polymer-In2O3 nanocrystals junction

Reversible conductance switching characteristics in a polymer-In2O3 nanocrystals junction

Unipolar Switching Characteristics for Self-Aligned WO<inf>x</inf> Resistance RAM (R-RAM)

Mechanism of resistive memory effect in Ga doped ZnO thin films

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