In order to address the challenge of increasing data rates, next generation optical communication networks will require the co-integration of electronics and photonics. Heterogeneous integration of these technologies has shown promise, but will eventually become bandwidth limited. Faster monolithic approaches will, therefore, be needed, but monolithic approaches using complementary metal-oxide-semiconductor (CMOS) electronics and silicon photonics are typically limited by their underlying electronic or photonic technologies. Here, we report a monolithically integrated electro-optical transmitter that can achieve symbol rates beyond 100 GBd. Our approach combines advanced bipolar CMOS with silicon plasmonics, and addresses key challenges in monolithic integration through the co-design of the electronic and plasmonic layers, including thermal design, packaging, and a nonlinear organic electro-optic material. To illustrate the potential of our technology, we develop two modulator conceptsan ultra-compact plasmonic modulator and, alternatively, a silicon-plasmonic modulator with photonic routing -both directly processed onto the bipolar CMOS electronics.