High-/spl kappa/ Ir/TiTaO/TaN capacitors suitable for analog IC applications

Chiang, K.C.; Huang, Chaoyi; Chin, Albert; Chen, W.J.; McAlister, S.P.; Chiu, Hsin‐Cheng; Chen, Jiann‐Ruey; Chi, Cheng–Chung

doi:10.1109/led.2005.851241

Cited by 36 publications

(23 citation statements)

References 6 publications

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“…[4][5][6][7][8] Ca-doped Pb͑Zr,Ti͒O 3 films were grown for use as the embedded capacitors for PCBs, but their growth temperature was too high for such application. 9 Recently, Bi-based, dielectric thin films such as Bi 6 Ti 5 TeO 22 ͑BTT͒, 10 Bi 5 Nb 3 O 15 , 11 and Bi 1.5 Zn 1.0 Nb 1.5 O 7 1,3,12 have been extensively studied because of their achievement of high-k value with low deposition temperatures. In particular, the high-k value of 69 with a low dissipation factor ͑Ͻ1.3%͒ 10 obtained by BTT films grown at 300°C using sputtering demonstrated their promise as a good candidate material for high-k dielectric films with low processing temperatures.…”

mentioning

confidence: 99%

Oxygen Pressure and Mn-Doping Effects on the Structure and Leakage Current of Bi[sub 6]Ti[sub 5]TeO[sub 22] Thin Film

Choi

Cho

et al. 2008

J. Electrochem. Soc.

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Te ions existed as Te 6+ in the Bi 6 Ti 5 TeO 22 ͑BTT͒ film grown at 300°C under a high oxygen pressure ͑OP͒ of 80.0 Pa and contributed to the formation of the crystalline BTT phase after subsequent annealing at 600°C. However, for the BTT film grown under a low OP of 53.3 Pa ͑or 9.33 Pa͒, Te 6+ ions, were converted to Te 4+ ions, which induced the phase transition of the BTT phase to the pseudo-Bi 4 Ti 3 O 12 and pseudo-Bi 2 Ti 2 O 7 phases after annealing at 600°C. The leakage current density decreased with increasing OP during the growth due to the decreased number of oxygen vacancies. The breakdown voltage also improved with increasing OP during the deposition. The Mn ions introduced in the BTT films by Mn doping existed as Mn 2+ or Mn 4+ and acted as the acceptors. This Mn doping to 10 mol % also reduced the leakage current density and increased the breakdown voltage by decreasing the number of intrinsic oxygen vacancies.Investigations on dielectric thin films with a high dielectric constant ͑k͒ which can be deposited at low temperatures ͑ഛ300°C͒ have multiplied for applications to the embedded decoupling capacitors for printed circuit board ͑PCB͒ and the gate insulators of ZnObased, thin-film transistors for organic light-emitting diodes ͑OLEDs͒ on plastic substrate. 1-3 The radio-frequency ͑rf͒ or analog/ mixed metal-insulator-metal ͑MIM͒ capacitors in semiconductor devices also require a dielectric thin film with low processing temperatures due to the limitation of the very large-scale integration back-end line integration temperature ͑Ͻ400°C͒. Previously, ͑Ba,Sr͒TiO 3 , Ta 2 O 5 , TaTiO, and BaSm 2 Ti 4 O 12 films grown at low temperatures were used as the gate insulators for OLEDs and rf MIM capacitors but suffered from a low-k value. 4-8 Ca-doped Pb͑Zr,Ti͒O 3 films were grown for use as the embedded capacitors for PCBs, but their growth temperature was too high for such application. 9 Recently, Bi-based, dielectric thin films such as Bi 6 Ti 5 TeO 22 ͑BTT͒, 10 Bi 5 Nb 3 O 15 , 11 and Bi 1.5 Zn 1.0 Nb 1.5 O 7 1,3,12 have been extensively studied because of their achievement of high-k value with low deposition temperatures. In particular, the high-k value of 69 with a low dissipation factor ͑Ͻ1.3%͒ 10 obtained by BTT films grown at 300°C using sputtering demonstrated their promise as a good candidate material for high-k dielectric films with low processing temperatures. However, their leakage current density was relatively high with a low breakdown voltage, 10 thereby necessitating the improvement of their electrical properties before the application of such BTT films. Furthermore, the structure of the BTT films was considerably influenced by the valence of the Te ions, which was determined by the oxygen pressure ͑OP͒ during the fabrication processes. 10 However, no detailed investigation on the variation of the crystal structure of the BTT film with OP has yet been conducted.In this work, BTT films were grown using pulsed laser deposition ͑PLD͒ and annealed under various OPs. The PLD method was selected...

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confidence: 99%

Oxygen Pressure and Mn-Doping Effects on the Structure and Leakage Current of Bi[sub 6]Ti[sub 5]TeO[sub 22] Thin Film

Choi

Cho

et al. 2008

J. Electrochem. Soc.

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“…8b shows the normalized capacitance versus measured temperature (TCC) of MIM capacitor for capacitance density 16 fF/ m 2 and 20 fF/ m 2 , respectively. We can find the TCC showed increase with the increase of the measured temperature (14).…”

Section: Resultsmentioning

confidence: 68%

High Performance Ir/TiPrO/TaN MIM Capacitors for Analog ICs Application

Huang¹,

Cheng²,

Chin³

et al. 2008

ECS Trans.

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In this paper, we demonstrate high quality material TiPrO and high density Ti x Pr 1-x O (x~0.67) metal-insulator-metal (MIM) capacitors using high work function (~5.3 eV) Ir top electrode. Very low leakage current of 7 10 -9 A/cm 2 at -1 V and high 16 fF/ m 2 capacitance density are achieved for 400 o C anneal TiPrO, which also meets the ITRS goals (at year 2018) of 10 fF/ m 2 density and /( ) 7 fA/(pF ) J C V V . Furthermore, the improved high 20 fF/ m 2 capacitance density TiPrO MIM is obtained at higher annealing temperature, where low leakage current 1.2 10 -7 A/cm 2 is measured at -1 V. These good performances indicate TiPrO MIM is suitable for analog/RF ICs Applications. IntroductionThe technology evolution for Metal-Insulator-Metal (MIM) capacitors (1)-(16) requires higher capacitance density with low leakage current at evaluating temperature (17). Besides, the MIM capacitors are also used for Analog/RF ICs and DRAM technology. Low voltage-or temperature-dependence of capacitance (VCC or TCC) is also needed for the multi-functional System-on-Chip (SoC) applications. Since the capacitance density equals /t , the only method for higher density, without increasing unwanted leakage current by decreasing dielectric thickness (t ), is to use higher dielectric constant dielectric ( ) materials. Thus, the MIM capacitors are continuously integrated with higher dielectrics from Al 2 O 3 ( =10) (3), HfO 2 -Al 2 O 3 ( ~15) (9), ZrO 2 , TiTaO (13), TiHfO (15) and TiNiO ( ~36) (16). One major drawback for higher-MIM device is the large leakage current due to low conduction band offset ( E C ) at evaluated temperature that leaks out the stored charge in capacitor (Q=C V). However, increasing dielectric constant ( ) usually leads to decreasing of E C with respect to the electrode. This is also the challenge of flash memory but unavoidable during IC operation due to large circuit density and high DC power dissipation due to leakage current. The possible solution is using high bandgap (E G ) dielectric to form the laminate (9) or multi-layer structure (10), but the overall value and voltage coefficient of capacitance (VCC) are largely degraded. Pr 2 O 3 is one of attractive rare earth metal oxides with many merits such as large conduction band offset ( E C~ 1 eV) (18), moderate dielectric constant ( ~15) and large bandgap (E G ~4 eV) (18). Furthermore, significantly larger Gibbs free energy of Pr 2 O 3 (+106 kcal/mol) (19)-(21) in contact with silicon than that of TiO 2 (+7.5 kcal/mol), Ta 2 O 5 (-52 kcal/mol), HfO 2 (+47 kcal/mol) and NiO (-51.4 kcal/mol) can avoid metal/oxide inter-diffusion or chemical reaction caused by oxygen exchange, which not only reduce the interfacial layer between dielectric layer and bottom electrode but also performs excellent thermal stability. Combining above advantages of high-Pr 2 O 3 with the high dielectric constant of TiO 2 (~50), mixed TiPrO dielectric overcomes the issue of leakage current without scarifying capacitance density.In this paper, we report Ir/TiPrO/TaN capacitors with cap...

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“…To this end, incorporation of rare-earth elements (La, Gd, Dy, Er) in HfO 2 and ZrO 2 to achieve high permittivity and lower leakage current was reported for sub-45 nm metal-insulator-semiconductor (MIS) devices. [9] Recently, a metal-insulator-metal (MIM) stack has been proposed as the next-generation capacitor structure because of its highly conductive electrodes and low parasitic capacitance. [10] Various high-k materials, such as SiON, (k % 4-7), Al 2 O 3 (k % 10), HfO 2 (k % 22), Ta 2 O 5 (k % 40), have been investigated in MIM capacitors for DRAM applications as a replacement for SiO 2 or Si 3 N 4 .…”

Section: Introductionmentioning

confidence: 99%

Growth and Characterization of Ti‐Ta‐O Thin Films on Si Substrates by Liquid Injection MOCVD for High‐k Applications from Modified Titanium and Tantalum Precursors

Devi

Hellwig

Barreca

et al. 2010

Chemical Vapor Deposition

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Titanium oxide (TiO 2 ) and titanium-tantalum oxide (Ti-Ta-O) thin films are deposited by liquid injection (LI) metal-organic (MO) CVD using metal amide-malonate complexes, [Ti(NR 2 ) 2 (dbml) 2 ], and tantalum, [Ta(NMe 2 ) 4 (dbml)] (R ¼ Me, Et; dbml ¼ di-tert-butylmalonato). TiO 2 and Ti-Ta-O films are deposited on Si(100) in the temperature ranges 350-650 8C and 500-700 8C, respectively. The structure, morphology, and chemical composition of the films are evaluated by X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM), Rutherford backscattering spectroscopy (RBS), and X-ray photoelectron spectroscopy (XPS). The electrical properties of the films, namely the dielectric properties, are assessed by carrying out capacitance-voltage (C-V) measurements on metal-oxide-semiconductor (MOS) capacitor structures.

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High-/spl kappa/ Ir/TiTaO/TaN capacitors suitable for analog IC applications

Cited by 36 publications

References 6 publications

Oxygen Pressure and Mn-Doping Effects on the Structure and Leakage Current of Bi[sub 6]Ti[sub 5]TeO[sub 22] Thin Film

Oxygen Pressure and Mn-Doping Effects on the Structure and Leakage Current of Bi[sub 6]Ti[sub 5]TeO[sub 22] Thin Film

High Performance Ir/TiPrO/TaN MIM Capacitors for Analog ICs Application

Growth and Characterization of Ti‐Ta‐O Thin Films on Si Substrates by Liquid Injection MOCVD for High‐k Applications from Modified Titanium and Tantalum Precursors

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