2022
DOI: 10.1016/j.jallcom.2021.161897
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High stability of flexible perovskite transparent conductive oxide film via van der Waals heteroepitaxy

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Cited by 16 publications
(7 citation statements)
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“…Despite the different cationic rearrangements of these orientations, the epitaxial match is allowed by an almost identical rearrangement of the oxygen sublattices of the two compounds. [100] A similar (111) orientation was also observed for other perovskites thin films deposited on mica (001), such as SRO/BTO, [101] SrVO 3 , [102] Eu-doped 0.94Bi 0.5 Na 0.5 TiO 3 -0.06BaTiO 3 , [99] CaVO 3 /STO, [103] and La 0.7 Sr 0.3 MnO 3 /STO. [104] Nevertheless, other types of orientations and even polycrystalline thin films are reported in literature for perovskite oxides deposited on mica substrates.…”
Section: Mechanical Exfoliationsupporting
confidence: 75%
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“…Despite the different cationic rearrangements of these orientations, the epitaxial match is allowed by an almost identical rearrangement of the oxygen sublattices of the two compounds. [100] A similar (111) orientation was also observed for other perovskites thin films deposited on mica (001), such as SRO/BTO, [101] SrVO 3 , [102] Eu-doped 0.94Bi 0.5 Na 0.5 TiO 3 -0.06BaTiO 3 , [99] CaVO 3 /STO, [103] and La 0.7 Sr 0.3 MnO 3 /STO. [104] Nevertheless, other types of orientations and even polycrystalline thin films are reported in literature for perovskite oxides deposited on mica substrates.…”
Section: Mechanical Exfoliationsupporting
confidence: 75%
“…[146] Similarly, strain effects on the electrical resistivity have been reported also for other perovskites oxides such as SrVO 3 and BaNb 0.5 Ti 0.5 O 3 . [103,105] It is also worth noting that bending strain may affect other functional properties of perovskite oxides thin films, such as the photoluminescence intensity of Pr-doped Ba 0.85 Ca 0.15 Ti 0.9 Zr 0.1 O 3 thin films. [147] The opportunity of dynamically tuning of ferroelectric and dielectric properties in ferroelectric supported thin films through mechanical bending was demonstrated by Ko et al [143] In their work, the authors showed that BTO thin films on Mica substrates undergo a transformation from ferroelectric tetragonal to paraelectric cubic structure for both inward and outward bending mode, hindering the out of plane ferroelectric polarization.…”
Section: Mechanical Bendingmentioning
confidence: 99%
“…It is easy to be peeled off and possesses multiple advantages such as low cost, light weight, and excellent thermal stability and mechanical property. Several functional oxide thin films have been reported to grow on mica for future device applications. Recently, several oxide–oxide VAN systems have been demonstrated for mica integration toward flexible electronics. , The reports on the integration of oxide–metal VAN systems on mica are very limited, , as shown in Table for the list of recently reported VAN systems on mica. This is largely due to the growth incompatibility and limited buffer layer selections.…”
Section: Introductionmentioning
confidence: 99%
“…For those demonstrated on flexible mica substrates, they are mostly single-phase oxide or oxide−oxide nanocomposites, such as CaVO 3 , La 0.7 Sr 0.3 MnO 3 (LSMO):NiO, BiFeO 3 :CoFe 2 O 4 , etc. 19,21,47 The demonstrations of oxide−metal VAN systems on mica are very scarce, 20 largely due to the growth challenges in achieving van der Waals epitaxy between VAN and mica.…”
Section: ■ Introductionmentioning
confidence: 99%
“…Most of the spintronic devices and components have been integrated on single-crystal oxide substrates, such as SrTiO 3 and MgO, ,,,,, with limited reports on single-crystalline Si substrates or flexible mica substrates. For those demonstrated on flexible mica substrates, they are mostly single-phase oxide or oxide–oxide nanocomposites, such as CaVO 3 , La 0.7 Sr 0.3 MnO 3 (LSMO):NiO, BiFeO 3 :CoFe 2 O 4 , etc. ,, The demonstrations of oxide–metal VAN systems on mica are very scarce, largely due to the growth challenges in achieving van der Waals epitaxy between VAN and mica.…”
Section: Introductionmentioning
confidence: 99%