High structural order in thin films of the organic semiconductor diindenoperylene

Dürr, Arndt C.; Schreiber, Frank; Münch, M.; Karl, N.; Krause, B.; Kruppa, V.; Dosch, H.

doi:10.1063/1.1508436

Cited by 139 publications

(114 citation statements)

References 6 publications

Supporting

Mentioning

108

Contrasting

Order By: Relevance

“…DIP is a π -conjugated semiconductor and has a relatively simple chemical structure: it is a planar hydrocarbon. This molecule has excellent optoelectronic device performances [52,53]. DIP has been studied extensively in monolayer on coinage metal surfaces [54][55][56].…”

Section: From Simple To Complex Interfacesmentioning

confidence: 99%

Electronic charge rearrangement at metal/organic interfaces induced by weak van der Waals interactions

Ferri

Ambrosetti

Tkatchenko

2017

Phys. Rev. Materials

View full text Add to dashboard Cite

Electronic charge rearrangements at interfaces between organic molecules and solid surfaces play a key role in a wide range of applications in catalysis, light-emitting diodes, single-molecule junctions, molecular sensors and switches, and photovoltaics. It is common to utilize electrostatics and Pauli pushback to control the interface electronic properties, while the ubiquitous van der Waals (vdW) interactions are often considered to have a negligible direct contribution (beyond the obvious structural relaxation). Here, we apply a fully self-consistent Tkatchenko-Scheffler vdW density functional to demonstrate that the weak vdW interactions can induce sizable charge rearrangements at hybrid metal/organic systems (HMOS). The complex vdW correlation potential smears out the interfacial electronic density, thereby reducing the charge transfer in HMOS, changes the interface work functions by up to 0.2 eV, and increases the interface dipole moment by up to 0.3 Debye. Our results suggest that vdW interactions should be considered as an additional control parameter in the design of hybrid interfaces with the desired electronic properties.

show abstract

Section: From Simple To Complex Interfacesmentioning

confidence: 99%

Electronic charge rearrangement at metal/organic interfaces induced by weak van der Waals interactions

Ferri

Ambrosetti

Tkatchenko

2017

Phys. Rev. Materials

View full text Add to dashboard Cite

show abstract

“…The intensity of the Kiessig fringes ͑corresponding to a film thickness of 33Ϯ 1 nm͒ is dramatically reduced in case of C60 on PEN, however, the thickness oscillations nicely correlate to the total nominal film thickness. From the spacing of the Laue oscillations [42][43][44] in the vicinity of the first three C60 peaks ͓see inset of Fig. 4͑a͔͒ the coherent film thickness can be derived to 24Ϯ 1 nm, which indicates coherent out-of-plane order throughout almost the complete C60 film.…”

Section: Structural Investigationsmentioning

confidence: 99%

Structural and electronic properties of pentacene-fullerene heterojunctions

Salzmann

Duhm

Opitz

et al. 2008

Journal of Applied Physics

102

104

View full text Add to dashboard Cite

In this study the performance differences of layered and bulk-heterojunction based organic solar cells composed of the prototypical p-and n-type organic semiconductors pentacene ͑PEN͒ and fullerene ͑C60͒ are correlated with the physical properties of the heterostructures. The electronic structure of layered and codeposited thin PEN and C60 films on the conducting polymer substrate poly͑ethylenedioxythiophene͒:poly͑styrenesulfonate͒ ͑PEDOT:PSS͒ was investigated with ultraviolet photoelectron spectroscopy. Layered structures of C60 on PEN precovered PEDOT:PSS exhibited an offset of the highest occupied molecular orbital ͑HOMO͒ levels of 1.45 eV. In contrast, codeposited films of PEN and C60 showed a reduced HOMO-level offset of 0.85 eV, which increased to 1.45 eV by precoverage of the substrate with a thin PEN layer. In this case, the PEN-HOMO level was Fermi-level pinned at 0.35 eV binding energy and charge transfer between PEN and PEDOT:PSS decreased the vacuum level by 0.75 eV. In addition, the morphology and crystal structure of the respective systems have been investigated by atomic force microscopy ͑AFM͒, x-ray diffraction ͑XRD͒ and Fourier-transform infrared spectroscopy, which indicated pronounced phase separation of PEN and C60 in the codeposited films. XRD revealed crystalline growth of PEN in all investigated cases forming crystallites that exceeded the nominal film thickness by an order of magnitude, whereas C60 was crystalline only if grown on the PEN precovered substrates. AFM investigations allowed to correlate morphology and structure revealing micro-and nanophase separation between PEN and C60.

show abstract

“…Optical properties of DIP thin films have been investigated with ellipsometry and theoretically explained [8,9]. Thin DIP films have been found to exhibit high structural order [10] but also rapid roughening after initial layer-by-layer growth [11][12][13]. Encapsulation of DIP thin films has been employed for increased device stability [14,15], and contact formation as well as electronic structure at contacts [16][17][18][19][20] have been studied.…”

Section: Introductionmentioning

confidence: 99%

Real-time X-ray diffraction measurements of structural dynamics and polymorphism in diindenoperylene growth

et al. 2009

View full text Add to dashboard Cite

We investigate the temperature-dependent polymorphs in diindenoperylene (DIP) thin films on sapphire and silicon oxide substrates using in situ X-ray scattering. On both substrates the DIP unit cell is very similar to the high-temperature phase of bulk crystals, with the substrate stabilising this structure well below the temperature where a phase transition to a low-temperature phase is observed in the bulk. Lowering the substrate temperature for DIP growth leads to a change in molecular orientation and an additional polymorph appears, with both these effects being more pronounced on sapphire as compared to silicon oxide. Using real-time reciprocal-space mapping we observe an expansion of the in-plane unit cell during DIP growth, which may be due to changes in molecular orientation as well as strain in the first monolayers.

show abstract

High structural order in thin films of the organic semiconductor diindenoperylene

Cited by 139 publications

References 6 publications

Electronic charge rearrangement at metal/organic interfaces induced by weak van der Waals interactions

Electronic charge rearrangement at metal/organic interfaces induced by weak van der Waals interactions

Structural and electronic properties of pentacene-fullerene heterojunctions

Real-time X-ray diffraction measurements of structural dynamics and polymorphism in diindenoperylene growth

Contact Info

Product

Resources

About