High-Tc Step-Edge Josephson Junction Arrays: Comparison of Simulated and Experimental Voltage Responses

Abstract

With the recent development of multi-junction Superconducting Quantum Interference Device (SQUID) arrays and Superconducting Quantum Interference Filters (SQIFs) using High Temperature Superconducting (HTS) materials, it has become increasingly desirable to accurately model HTS devices to enable the optimization of the design for enhanced performance before fabrication. Initially, to develop our simulation capability for HTS devices, we have been working with a commercial software package to fit the data obtained from the characterization of two HTS devices. The models were adjusted iteratively by increasing the number of parameters taken into account, including the aspect ratio of the SQUID loop and the bias injection point. These models were developed for devices fabricated using YBCO step-edge junctions formed on MgO substrates. It was found that the biasing mechanism affects the SQIF voltage response to applied magnetic fields. This has implications for the design of larger arrays.

Quantum interference effects in 1D parallel high-T c SQUID arrays with finite inductance

“…However, the average voltage modulation per SQUID within each sub-array was only ~1 μV, which was smaller than a single SQUID loop of the same area. More recently, in terms of biasing the arrays, Hannam et al [20] reported different voltage-magnetic field responses depending on the method of current biasing the arrays when modelling the effect of biasing geometries.…”

Modelling high- Tc electronics

“…The methods established to use FastHenry and JSIM for small arrays with narrow tracks can be extended to any type and size of array, with any bias connection points, like the two small test arrays with loops of unequal areas in [92], shown in figure 18.…”