High-Temperature And Moisture-Ageing Reliability of High-Density Power Packages For Electric Vehicles

Dwarakanath, Shreya; Raj, P. Markondeya; Smet, Vanessa; Losego, Mark D.; Tummala, Rao

doi:10.1109/ectc.2018.00035

Cited by 5 publications

(3 citation statements)

References 10 publications

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“…This letter uses the "ET Microvia V1" embedding technology from Würth Elektronik CBT with the process flow from [15], which is also adapted in [17]. While the dielectric strength of the NCA layer itself is initially sufficient as high-voltage isolation [18], further possible failures of PCB-embedded packages from resin densification [18], humidity, or delamination [19] should be further studied. In addition to the gluing of the ICs in the package, the mechanical stability of the thin package is improved by the high number of microvias on both IC sides and the vias outside the IC area inside the PCB package.…”

Section: Pcb Embedding For Half-bridge Integrationmentioning

confidence: 99%

PCB-Embedded GaN-on-Si Half-Bridge and Driver ICs With On-Package Gate and DC-Link Capacitors

Moench

Reiner

Waltereit

et al. 2021

IEEE Trans. Power Electron.

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A low-inductive half-bridge and gate driver package with on-package gate and dc-link capacitors is realized by printed circuit board (PCB) embedding of two GaN-on-Si ICs. While monolithic half-bridge and driver integration reduces on-chip parasitics, it does not solve the interconnection challenge to external capacitors. This letter solves this issue through advantageous combination of PCB embedding and monolithic circuit integration. This letter uses GaN-on-Si power circuits with integrated gate drivers, freewheeling diodes, and temperature and current sensors. GaN ICs are fabricated with thick copper on both sides, which makes them applicable to commercial PCB-embedding technologies. Thermal aspects are discussed and electromagnetic simulations used to compare the PCB-embedded package to a bond wire based package. A PCB-embedded dc-dc converter is operated up to 350 V and 450 W with up to 98.7% efficiency. 380 V hard-switching transitions show below 8% over-and undershoot despite over 120 V/ns slew rates. Parallel platelike placement of silicon flip-chip capacitors above the gate driver final stage transistors and separated only by a thin PCB layer increased the gate-loop parasitic inductance by only 40 pH. Index Terms-Bridge circuits, driver circuits, gallium nitride, multichip modules, power integrated circuits, printed circuits, semiconductor device packaging.

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Section: Pcb Embedding For Half-bridge Integrationmentioning

confidence: 99%

PCB-Embedded GaN-on-Si Half-Bridge and Driver ICs With On-Package Gate and DC-Link Capacitors

Moench

Reiner

Waltereit

et al. 2021

IEEE Trans. Power Electron.

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“…Electrical resistivity measurement. Electrical conductivity was determined on samples with dimensions of 3.5 Â 3.5 Â 50 mm 3 and was evaluated by a four-point Probe method according to equations (2) and (3)…”

Section: Copper Chemical Analysismentioning

confidence: 99%

“…insulated gate bipolar transistor power modules). [2][3][4][5][6] These require high electrical and thermal conductivities and adjustable CTE.…”

Section: Introductionmentioning

confidence: 99%

Electrical and thermal conductivities of the Cu–CF composite

Koráb

Krcho²,

Štefánik

et al. 2019

Journal of Composite Materials

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The paper presents a new approach in the field of metal–matrix composite characterisation where an electrical conductivity measurement was used to calculate the electron part of composite thermal conductivity by using the Wiedemann–Franz law. The electrical and thermal conductivities of the composite were characterised and their relationship was analysed. Results showed that in comparison with simple analytical models, this method can also be used for predicting the thermal conductivity of the copper matrix–continuous carbon fibre composite in a transverse direction. The unidirectional composite was produced by diffusion bonding and contained 40–60 vol.% of unidirectional fibres. Experiments were performed in directions parallel and normal to the fibre orientation and showed that with an increasing ratio of fibre volume, both thermal and electrical conductivities decreased from 221.6 W/m·K to 38.7 W/m·K and from 35.8 MS/m to 5.3 MS/m, respectively.

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The Proposed Automated Optimal Design for Power Switch: A Thermo-mechanical-Coordinated and Multi-objective-Oriented Optimization Methodology

Zhang

Huang

et al. 2023

Automated Design of Electrical Converters With Advanced AI Algorithms

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High-Temperature And Moisture-Ageing Reliability of High-Density Power Packages For Electric Vehicles

Cited by 5 publications

References 10 publications

PCB-Embedded GaN-on-Si Half-Bridge and Driver ICs With On-Package Gate and DC-Link Capacitors

PCB-Embedded GaN-on-Si Half-Bridge and Driver ICs With On-Package Gate and DC-Link Capacitors

Electrical and thermal conductivities of the Cu–CF composite

The Proposed Automated Optimal Design for Power Switch: A Thermo-mechanical-Coordinated and Multi-objective-Oriented Optimization Methodology

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