High temperature annealing and CVD growth of few-layer graphene on bulk AlN and AlN templates

Dagher, Roy; Matta, Samuel; Parret, Romain; Paillet, Matthieu; Jouault, Benoît; Nguyễn, Luân; Portail, Marc; Zieliński, Marcin; Chassagne, Thierry; Tanaka, Satoru; Brault, J.; Cordier, Y.; Michon, A.

doi:10.1002/pssa.201600436

Cited by 10 publications

(9 citation statements)

References 39 publications

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“…Gr deposition on these non-catalytic surfaces represents a challenging task, as it requires significantly higher temperatures as compared to conventional deposition on metals. The first experimental works addressing this issue showed the possibility of depositing a few layers of Gr both on bulk AlN (Al and N face) and on AlN templates grown on different substrates, such as Si (111) and SiC, at temperatures >1250 • C using propane (C 3 H 8 ) as the carbon source, without significantly degrading the morphology of AlN substrates/templates [119,120]. In spite of the very promising results of these experiments, further work will be required to evaluate the feasibility and the effects of CVD Gr growth onto AlN/GaN or AlGaN/GaN heterostructures.…”

Section: Materials Science Issues and Challengesmentioning

confidence: 99%

Vertical Transistors Based on 2D Materials: Status and Prospects

et al. 2018

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Two-dimensional (2D) materials, such as graphene (Gr), transition metal dichalcogenides (TMDs) and hexagonal boron nitride (h-BN), offer interesting opportunities for the implementation of vertical transistors for digital and high-frequency electronics. This paper reviews recent developments in this field, presenting the main vertical device architectures based on 2D/2D or 2D/3D material heterostructures proposed so far. For each of them, the working principles and the targeted application field are discussed. In particular, tunneling field effect transistors (TFETs) for beyond-CMOS low power digital applications are presented, including resonant tunneling transistors based on Gr/h-BN/Gr stacks and band-to-band tunneling transistors based on heterojunctions of different semiconductor layered materials. Furthermore, recent experimental work on the implementation of the hot electron transistor (HET) with the Gr base is reviewed, due to the predicted potential of this device for ultra-high frequency operation in the THz range. Finally, the material sciences issues and the open challenges for the realization of 2D material-based vertical transistors at a large scale for future industrial applications are discussed.

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Section: Materials Science Issues and Challengesmentioning

confidence: 99%

Vertical Transistors Based on 2D Materials: Status and Prospects

et al. 2018

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“…Based on these results, the N2/C3H8 CVD growth experiments will be carried out at the intermediate temperature of 1350 °C, properly chosen to reduce AlGaN thermal decomposition and to provide, at the same time, the energy needed for Gr formation on this non-catalytic surface. It is worth noting that the same temperature has been recently employed to achieve optimal Gr growth onto AlN/SiC templates by a N2/C3H8 CVD process [34].…”

Section: Resultsmentioning

confidence: 99%

Nanoscale structural and electrical properties of graphene grown on AlGaN by catalyst-free chemical vapor deposition

Giannazzo¹,

Dagher²,

Schilirò³

et al. 2020

Nanotechnology

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The integration of graphene (Gr) with nitride semiconductors is highly interesting for applications in high-power/high-frequency electronics and optoelectronics. In this work, we demonstrated the direct growth of Gr on Al0.5Ga0.5N/sapphire templates by propane (C3H8) chemical vapor deposition at a temperature of 1350 °C. After optimization of the C3H8 flow rate, a uniform and conformal Gr coverage was achieved, which proved beneficial to prevent degradation of AlGaN morphology. X-ray photoemission spectroscopy revealed Ga loss and partial oxidation of Al in the near-surface AlGaN region. Such chemical modification of a ∼2 nm thick AlGaN surface region was confirmed by cross-sectional scanning transmission electron microscopy combined with electron energy loss spectroscopy, which also showed the presence of a bilayer of Gr with partial sp2/sp3 hybridization. Raman spectra indicated that the deposited Gr is nanocrystalline (with domain size ∼7 nm) and compressively strained. A Gr sheet resistance of ∼15.8 kΩ sq−1 was evaluated by four-point-probe measurements, consistently with the nanocrystalline nature of these films. Furthermore, nanoscale resolution current mapping by conductive atomic force microscopy indicated local variations of the Gr carrier density at a mesoscopic scale, which can be ascribed to changes in the charge transfer from the substrate due to local oxidation of AlGaN or to the presence of Gr wrinkles.

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“…GNSs are usually synthesized from “top-down” mechanical, chemical, thermal and electronic routes and via the solvent- or surfactant-based exfoliation of graphite. The “bottom-up” growth from molecular substrates has also been achieved, using the CVD method and via the graphitization of silicon carbide [ 106 , 107 , 108 , 109 , 110 , 111 , 112 ].…”

Section: Synthesis Of Larger Carbon Allotropesmentioning

confidence: 99%

The Transformation of 0-D Carbon Dots into 1-, 2- and 3-D Carbon Allotropes: A Minireview

2022

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Carbon dots (CDs) represent a relatively new type of carbon allotrope with a 0-D structure and with nanoparticle sizes < 10 nm. A large number of research articles have been published on the synthesis, characteristics, mechanisms and applications of this carbon allotrope. Many of these articles have also shown that CDs can be synthesized from “bottom-up” and “top-down” methods. The “top-down” methods are dominated by the breaking down of large carbon structures such as fullerene, graphene, carbon black and carbon nanotubes into the CDs. What is less known is that CDs also have the potential to be used as carbon substrates for the synthesis of larger carbon structures such as 1-D carbon nanotubes, 2-D or 3-D graphene-based nanosheets and 3-D porous carbon frameworks. Herein, we present a review of the synthesis strategies used to convert the 0-D carbons into these higher-dimensional carbons. The methods involve the use of catalysts or thermal procedures to generate the larger structures. The surface functional groups on the CDs, typically containing nitrogen and oxygen, appear to be important in the process of creating the larger carbon structures that typically are formed via the generation of covalent bonds. The CD building blocks can also ‘aggregate’ to form so called supra-CDs. The mechanism for the formation of the structures made from CDs, the physical properties of the CDs and their applications (for example in energy devices and as reagents for use in medicinal fields) will also be discussed. We hope that this review will serve to provide valuable insights into this area of CD research and a novel viewpoint on the exploration of CDs.

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High temperature annealing and CVD growth of few-layer graphene on bulk AlN and AlN templates

Cited by 10 publications

References 39 publications

Vertical Transistors Based on 2D Materials: Status and Prospects

Vertical Transistors Based on 2D Materials: Status and Prospects

Nanoscale structural and electrical properties of graphene grown on AlGaN by catalyst-free chemical vapor deposition

The Transformation of 0-D Carbon Dots into 1-, 2- and 3-D Carbon Allotropes: A Minireview

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