2006
DOI: 10.1016/j.solmat.2005.11.002
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High temperature annealing of sprayed SnO2: F layers in a silicon solar cell process with screen-printed contacts

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Cited by 35 publications
(14 citation statements)
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“…Furthermore, the O 1s spectrum of undoped TiO 2 can be divided into three peaks (Figure f). The peak at 529.78 eV is assigned to lattice oxygen in this oxide, whereas the two peaks at 531.72 and 533.25 eV can be attributed to the surface hydroxyl group Ti–OH and chemisorbed H 2 O molecules. However, for MTO-4 (Figure d), the binding energy of the lattice oxygen shifts to 530.08 eV due to the difference in the electronegativities of the two metal elements . This observation further confirms the formation of a Mo–O–Ti linkage in the Mo 6+ -doped TiO 2 nanoparticles.…”
Section: Resultsmentioning
confidence: 57%
“…Furthermore, the O 1s spectrum of undoped TiO 2 can be divided into three peaks (Figure f). The peak at 529.78 eV is assigned to lattice oxygen in this oxide, whereas the two peaks at 531.72 and 533.25 eV can be attributed to the surface hydroxyl group Ti–OH and chemisorbed H 2 O molecules. However, for MTO-4 (Figure d), the binding energy of the lattice oxygen shifts to 530.08 eV due to the difference in the electronegativities of the two metal elements . This observation further confirms the formation of a Mo–O–Ti linkage in the Mo 6+ -doped TiO 2 nanoparticles.…”
Section: Resultsmentioning
confidence: 57%
“…The large peak at 529.8 eV is assigned to lattice oxygen in this oxide phase, while the two peaks located at 531.6 and 532.6 eV could be attributed to Ti-OH (or CO 3 2-) and C-OH (or C-O-C) surface species, 66,67 respectively, owing to the residual surfactants on this sample. In sample c the characteristic peak at 530.8 eV is also assigned to lattice oxygen in SnO 2 , while the other two peaks positioned at 532.0 and 533.0 eV should be ascribed to surface hydroxyl groups Sn-OH and chemisorbed H 2 O molecules, 68 respectively. In the Sn-doped TiO 2 nanospheres (sample b), as expected, lattice oxygen from of the phase pure TiO 2 and SnO 2 is no longer observed, confirming that there is no separate simple oxides in this product.…”
Section: Resultsmentioning
confidence: 98%
“…An analysis on the optical properties of the SnO 2 :F as reported by Iratni et al establishes the idea of the Fermi level shift during the sintering process, which translates into a loss in conductivity and hence, reducing the cell efficiency. 11 The sintering temperature for other important semiconductors employed in the DSSC manufacturing has also been investigated. High porosity ZnO nanocrystalline films can be produced at a sintering temperature of 200 °C, whereas a more compact film is obtained when sintering at 400 °C.…”
Section: Introductionmentioning
confidence: 99%