High temperature application of diamond power device

Umezawa, Hamao; Nagase, Masanori; Kato, Y.; Shikata, Shinichi

doi:10.1016/j.diamond.2012.01.011

Cited by 154 publications

(106 citation statements)

References 22 publications

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“…On the Si substrate, a buffer layer (2 µm), a non-doped (4 µm) layer and a Mg-doped GaN (1 µm) layer were grown, successively. The Mg doping was 2.6×10 19 /cm 3 .…”

Section: All Article Content Except Where Otherwise Noted Is Licensmentioning

confidence: 99%

“…[1][2][3] High-power vertical GaN devices, such as vertical field effect transistors (FETs), vertical bipolar transistors, and vertical Schottkey diode so on are the main applications of GaN-related materials. In case of vertical FETs the source-drain current should be confined to the gate region to control the current by the gate.…”

Section: All Article Content Except Where Otherwise Noted Is Licensmentioning

confidence: 99%

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Laser-induced local activation of Mg-doped GaN with a high lateral resolution for high power vertical devices

et al. 2018

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A method for laser-induced local p-type activation of an as-grown Mg-doped GaN sample with a high lateral resolution is developed for realizing high power vertical devices for the first time. As-grown Mg-doped GaN is converted to p-type GaN in a confined local area. The transition from an insulating to a p-type area is realized to take place within about 1–2 μm fine resolution. The results show that the technique can be applied in fabricating the devices such as vertical field effect transistors, vertical bipolar transistors and vertical Schottkey diode so on with a current confinement region using a p-type carrier-blocking layer formed by this technique.

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“…On the Si substrate, a buffer layer (2 µm), a non-doped (4 µm) layer and a Mg-doped GaN (1 µm) layer were grown, successively. The Mg doping was 2.6×10 19 /cm 3 .…”

Section: All Article Content Except Where Otherwise Noted Is Licensmentioning

confidence: 99%

Section: All Article Content Except Where Otherwise Noted Is Licensmentioning

confidence: 99%

Laser-induced local activation of Mg-doped GaN with a high lateral resolution for high power vertical devices

et al. 2018

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“…[1][2][3] Recently, magnetic sensors based on nitrogen-vacancy centers in diamond have also emerged. 4,5) In fundamental studies toward these applications, high-pressure and high-temperature (HPHT) diamond substrates have been used.…”

Section: Introductionmentioning

confidence: 99%

Heteroepitaxial growth of diamond films on 3C-SiC/Si substrates with utilization of antenna-edge microwave plasma CVD for nucleation

Yaita

Iwasaki

Natal

et al. 2015

Jpn. J. Appl. Phys.

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Antenna-edge microwave plasma chemical vapor deposition was utilized for heteroepitaxial nucleation of diamond on 3C-SiC(001)/Si(001) substrates. A diamond grain density of 3 ' 10 9 cm %2 was obtained after 2 h of growth under the o001p preferential growth conditions. A two-step growth process led to a highly-oriented diamond films by suppressing the growth of non-aligned grains. Sharply-defined reflection high energy electron diffraction patterns of diamond were observed. The crystalline quality of the diamond films were investigated by X-ray diffraction pole figure analysis and micro-Raman spectroscopy. After 30 h of growth, heteroepitaxial diamond films were obtained with a full width at half-maximum of 3.8°in the X-ray diffraction polar angle and 7 cm %1 in the diamond Raman peak. The surface of diamond films was observed by atomic force microscopy. Flat domain surfaces with a root mean square roughness of 0.45 nm in 1 ' 1 µm 2 were obtained.

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“…(1) Electrical breakdown field: verified 3.5 MV/cm with Schottky junction, way surpassing SiC [21] (2) Elimination of killer defects by improving the epitaxial growth of the drift layer (described in this paper) (3) Achievement of low leakage current by surface treatment technology and high B (described in this paper) (4) Achievement of ultra high thermal resistant Schottky junction (described in this paper) (5) Development of vertical device process [22] (6) Development of field termination structure [23]- [25] (7) Verification of high current density at high temperature (5 KA/cm 2 @250 °C using small pseudo vertical device) [26] Additional tests other than mentioned above included observations of property unique to diamonds, such as observing that no hotspots would be formed in diamond through temperature mapping of the device in operation. [27] The diamond diode that could achieve both high temperature operation at 250 °C and high current density was developed, and this opened the possibility for a power device that does not require cooling, as well as with low loss at high temperature and high breakdown voltage.…”

Section: Technological Syntheses That Were Verifiedmentioning

confidence: 99%

Development of diamond-based power devices

Shikata

Umezawa

2013

Synthesiology English edition

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-Verification of its superiority as the ultimate power device-Diamond is expected to be an excellent material exceeding SiC for producing low loss power devices because of its superior material characteristics. We have developed series of elemental technologies including killer-defect free epitaxial growth, refractory Schottky contact, Schottky barrier height control associated with low leakage current and termination structure. As a result, we have developed a refractory Schottky barrier diode with fast switching capability, which can operate for over 300,000 hours at 250 °C. R&D of large scale wafers and large power devices are required to realize low-loss devices with a new concept of "cooling system free." Development of diamond-based power devicesKeywords : Diamond, power switching device, refractory, low loss, Schottky diode − 148 −

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High temperature application of diamond power device

Cited by 154 publications

References 22 publications

Laser-induced local activation of Mg-doped GaN with a high lateral resolution for high power vertical devices

Laser-induced local activation of Mg-doped GaN with a high lateral resolution for high power vertical devices

Heteroepitaxial growth of diamond films on 3C-SiC/Si substrates with utilization of antenna-edge microwave plasma CVD for nucleation

Development of diamond-based power devices

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