High Temperature Behaviour of Ceramic Substrates for Power Electronics Integration

Abstract

A new criterion allowing for the choice of the most appropriate substrate for high voltage high temperature power electronics applications is introduced. Different insulating materials (AlN, Alumina and BN) are tested up to 450°C regarding their dielectric strength. These results are presented and discussed.

Ceramic Substrates for High-temperature Electronic Integration

“…The role of the binders for this material has already been underlined by some authors. Dagdag et al 12 measured the dielectric properties of three types of boron nitride, respectively, with boric acid binder (as was the case for the sample tested in this paper), calcium borate binder, and the last without any additives. The measurements show that for the two last samples the dielectric strength was halved when the temperature reached 450°C.…”