One of the most attractive ways to increase power handling capacity in power modules is to increase the operating temperature using wide-band-gap semiconductors. Ceramics are ideal candidates for use as substrates in high-power high-temperature electronic devices. The present article aims to determine the most suitable ceramic material for this application.

A new criterion allowing for the choice of the most appropriate substrate for high voltage high temperature power electronics applications is introduced. Different insulating materials (AlN, Alumina and BN) are tested up to 450°C regarding their dielectric strength. These results are presented and discussed.

No abstract

No abstract