High-temperature behaviour of Pd-n-GaAs contacts

Nee, C. Y.; Chang, Chung‐Liang; Cheng, Tai-Yuan; Huang, Ta-Jen

doi:10.1007/bf00722333

Cited by 7 publications

(2 citation statements)

References 15 publications

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“…The increase in the n riv value is shown in figure 3. A similar increase in n after aging has been observed by others and is attributed to the leakage current and/or to an increase of defects caused by interfacial stress [15].…”

Section: Ideality Factor (N)supporting

confidence: 87%

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High-temperature aging studies on Ru/n-GaAs Schottky contacts

Sharda¹

1996

Semicond. Sci. Technol.

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Degradation in Schottky behaviour of Ru/n-GaAs samples was studied after the samples underwent annealing at 200 • C, 300 • C and 400 • C for times up to 1000 hours. Ru contacts to n-type GaAs were fabricated from electron beam evaporation of pure Ru metal. Electrical characterization of these contacts was carried out by capacitance-voltage (C -V ) and current-voltage (I -V ) measurements. At room temperature, a Schottky barrier height (SBH) φ C −V b of 0.87 eV was obtained from C -V measurements. The room-temperature forward I -V measurements gave an SBH φ fiv b of 0.81 eV and an ideality factor (n) of 1.15. The doping density N d obtained from C -V analysis agreed well with manufacturer's data. The current densities for reverse bias J riv s and forward bias J fiv s were found to be very similar. The SBH varied when samples were annealed. The φ C −V b decreased slightly at 200 • C and 300 • C aging but increased sharply at 400 • C. The value of φ fiv b decreased with aging while a steady increase in n was noted at all three temperatures. The operational reliability for the Ru contacts was evaluated by choosing a failure criterion of a twelve times increase in current density J s and then constructing the Arrhenius plot of log time-to-failure versus the inverse of temperature, 1000/T where T is the aging temperature. The resulting plot was a straight line, indicating that a single failure mechanism was dominant at all three temperatures. The slope of the plot gave an activation energy of 0.375 eV, and a median life of 2 × 10 5 hours at room temperature (300 K).

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Section: Ideality Factor (N)supporting

confidence: 87%

“…A decrease in φ b was observed at all annealing temperatures. This decrease in φ f iv b could be due to dispersion of GaAs surface native oxides after annealing, resulting in an intimate contact [15].…”

Section: Initial Measurementsmentioning

confidence: 99%