The doping concentration dependence of the zinc acceptor energy level in In0.49Ga0.51P has been studied and can be expressed as EA=45.75−8.20×10−6 P1/3 meV, where P is the zinc acceptor concentration in cm−3. The zinc-doped In0.49Ga0.51P epitaxial layers were grown on 〈100〉 oriented semi-insulating GaAs substrates which are in very good crystallinity with a lattice mismatch of only 0.26%.
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