The interfacial reaction and electrical characteristics of molybdenum-n-GaAs contacts

Nee, C. Y.; Chang, Chia-Seng; Cheng, Tai-Yuan; Huang, Ta-Jen

doi:10.1007/bf00719988

J Mater Sci Lett

1988

DOI: 10.1007/bf00719988

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The interfacial reaction and electrical characteristics of molybdenum-n-GaAs contacts

C. Y. Nee

Chia-Seng Chang

Tai-Yuan Cheng

et al.

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Cited by 4 publications

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XRD investigations of WSiN and LaB₆ layers on GaAs

Nebauer

1996

Physica Status Solidi (b)

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Dedicated to Professor Dr. K. W. BOER on the occasion of his 70th birthdayThe microstructurcs of WSiN and LaB6 thin layers (amorphous or crystalline) on GaAs substrates are studied in dependence on the deposition and annealing treatments by means of the TFXRD parallel-beam technique. From the I(219) diffractograms the recrystallization behaviour of thc sputtered a-WSiN and a-LaB6 layers can he especially investigated. These results are of relevance for the choice of suitable materials for diffusion barriers in contact systems. Mittels TFXRD-Parallelstrahlteclinik werden die Mikrostrukturen (amorph oder kristallin) vonWSiN-und LaBc-Schichten auf GaAs-Substraten in Abhiingigkeit vom Beschichtungs-und Temper-Modus untersucht. Insbcsondere kann ails den 1(28)-Diffraktogrammen das Rekristallisationsverhalten der gesputterten a-WSiN-und a-LaB&chichten bestirnmt werden. Dicse Ergebnisse sind von Bedcutung bei der Anwendung dieser Substamen als Diffusionsbarrieren in Kontaktsystemen.

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XRD investigations of WSiN and LaB₆ layers on GaAs

Nebauer

1996

Physica Status Solidi (b)

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Metal/semiconductor interfacial reactions

Moazed

1992

Metall Trans A

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Experimental investigation of Polythermal Ternary Mo-Ga-As phase equilibria

Han¹,

Schmid–Fetzer²

1992

JPE

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The interfacial reaction and electrical characteristics of molybdenum-n-GaAs contacts

Cited by 4 publications

References 10 publications

XRD investigations of WSiN and LaB₆ layers on GaAs

XRD investigations of WSiN and LaB₆ layers on GaAs

Metal/semiconductor interfacial reactions

Experimental investigation of Polythermal Ternary Mo-Ga-As phase equilibria

Contact Info

Product

Resources

About

The interfacial reaction and electrical characteristics of molybdenum-n-GaAs contacts

Cited by 4 publications

References 10 publications

XRD investigations of WSiN and LaB6 layers on GaAs

XRD investigations of WSiN and LaB6 layers on GaAs

Metal/semiconductor interfacial reactions

Experimental investigation of Polythermal Ternary Mo-Ga-As phase equilibria

Contact Info

Product

Resources

About

XRD investigations of WSiN and LaB₆ layers on GaAs

XRD investigations of WSiN and LaB₆ layers on GaAs