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The growth of a reaction layer sequence of Mo/Mo3Ga/Mo5As4/GaAs is observed at 750 to 900 • C in bulk Mo/GaAs diffusion couples as shown in metallographic cross sections using EPMA. The same layer sequence is observed by AES depth profiling in fully reacted Mo-thin film/GaAs diffusion couples after 10 min. annealing at 900-950 • C. These layers, which are consistent with thermodynamic data and the phase diagram, indicate local equilibrium at the interfaces along the diffusion paths. No ternary phase is formed in the interphase reaction in a closed Mo-GaAs system. A quantitative analysis of the motion of phase boundaries and the interrelated migration of atoms is presented, based on measurements of the individual layer growth and the location of the initial interface. -(HAN, Q.; SCHMID-FETZER, R.; Z. Metallkd. 84 (1993) 9, 605-612; AG Elektron.