The doping concentration dependence of the zinc acceptor ionization energy in In0.49Ga0.51P

Chang, Chih‐Yung; Wu, Meng‐Chyi; Su, Yan–Kuin; Nee, C. Y.; Cheng, K. Y.

doi:10.1063/1.335610

Cited by 12 publications

(3 citation statements)

References 7 publications

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“…Note that the depth of acceptor level, ΔE A , depends on the ionized acceptor concentration owing to the Coulomb potential of ionized acceptors. ΔE A is expressed as [18][19][20])…”

Section: Regular Papermentioning

confidence: 99%

Hall-effect measurements of metalorganic vapor-phase epitaxy-grown p-type homoepitaxial GaN layers with various Mg concentrations

Horita¹,

Takashima²,

Tanaka³

et al. 2016

Jpn. J. Appl. Phys.

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Mg-doped p-type gallium nitride (GaN) layers with doping concentrations in the range from 6.5 × 1016 cm−3 (lightly doped) to 3.8 × 1019 cm−3 (heavily doped) were investigated by Hall-effect measurement for the analysis of hole concentration and mobility. p-GaN was homoepitaxially grown on a GaN free-standing substrate by metalorganic vapor-phase epitaxy. The threading dislocation density of the p-GaN was 4 × 106 cm−2 measured by cathodoluminescence mapping. Hall-effect measurements of p-GaN were carried out at a temperature in the range from 160 to 450 K. A low compensation ratio of less than 1% was revealed. We also obtained the depth of the Mg acceptor level of 235 meV considering the lowering effect by the Coulomb potential of ionized acceptors. The hole mobilities of 33 cm2 V−1 s−1 at 300 K and 72 cm2 V−1 s−1 at 200 K were observed in lightly doped p-GaN.

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“…Note that the depth of acceptor level, ΔE A , depends on the ionized acceptor concentration owing to the Coulomb potential of ionized acceptors. ΔE A is expressed as [18][19][20])…”

Section: Regular Papermentioning

confidence: 99%

Hall-effect measurements of metalorganic vapor-phase epitaxy-grown p-type homoepitaxial GaN layers with various Mg concentrations

Horita¹,

Takashima²,

Tanaka³

et al. 2016

Jpn. J. Appl. Phys.

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“…26 In a simple model, the reduction of the ionization energy is assumed to be inversely proportional to the average distance between the Al acceptors. This simple relation can be represented by the following expression: [26][27][28]…”

Section: B Ionization Ratio and Ionization Energy Of Acceptorsmentioning

confidence: 99%

Temperature and doping dependencies of electrical properties in Al-doped 4H-SiC epitaxial layers

Koizumi

Suda

Kimoto

2009

Journal of Applied Physics

100

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The free hole concentration and the low-field transport properties of Al-doped 4H-SiC epilayers with several acceptor concentrations grown on semi-insulating substrates have been investigated in the temperature range from 100 to 500 K by Hall-effect measurements. Samples have been grown by cold-wall chemical vapor deposition ͑CVD͒ in the Al acceptor concentration range from 3 ϫ 10 15 to 5.5ϫ 10 19 cm −3 . The dependencies of the acceptor ionization ratio at 300 K and the ionization energy on the acceptor concentration were estimated. Numerical calculations of the hole Hall mobility and the Hall scattering factor have been performed based on the low-field transport model using relaxation-time approximation. At the low acceptor concentrations, the acoustic phonon scattering dominates the hole mobility at 300 K. At the high acceptor concentrations, on the other hand, the neutral impurity scattering dominates the mobility. A Caughey-Thomas mobility model with temperature dependent parameters is used to describe the dependence of the hole mobilities on the acceptor concentration, and the physical meanings of the parameters are discussed.

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“…where p is the hole concentration in the p-emitter, µ p is the hole mobility in the p-emitter, d is the emitter thickness, l is the digit length and x is the width of the part of the photoactive area. Due to a relatively large ionization energy of Mg acceptors in GaInP (being equal to 39.7 meV for the doping level of 4 × 10 17 according to [27]) the hole concentration depends on the temperature in the wide range as shown in figure 13, where p is calculated using Fermi-Dirac statistics. Assuming linear temperature dependence of the hole mobility (from 100 cm 2 s −1 V −1 at 100 K to 50 cm 2 s −1 V −1 at 300 K) and using geometrical parameters of the solar cell grid the equivalent capacitance of the circuit presented in figure 12 was calculated.…”

Section: Discussionmentioning

confidence: 99%

III-phosphides heterojunction solar cell interface properties from admittance spectroscopy

Gudovskikh¹,

Kleider²,

Chouffot³

et al. 2009

J. Phys. D: Appl. Phys.

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GaInP solar cell interfaces were characterized by admittance spectroscopy. Admittance spectroscopy is shown to be sensitive to the band structure at the heterojunction interfaces. In particular, a correlation between activation energy of the capacitance step in a capacitance versus temperature plot and effective potential barrier for majority carriers is demonstrated, indicating a new method for the determination of potential barriers at heterointerfaces. Using this technique, the effective potential barrier for holes at the pAl 0.53 In 0.47 P/p-GaAs interface is found to be equal to 0.6 eV. Effects of interface defects and spreading resistance in the emitter of solar cells are illustrated and discussed.

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The doping concentration dependence of the zinc acceptor ionization energy in In0.49Ga0.51P

Cited by 12 publications

References 7 publications

Hall-effect measurements of metalorganic vapor-phase epitaxy-grown p-type homoepitaxial GaN layers with various Mg concentrations

Hall-effect measurements of metalorganic vapor-phase epitaxy-grown p-type homoepitaxial GaN layers with various Mg concentrations

Temperature and doping dependencies of electrical properties in Al-doped 4H-SiC epitaxial layers

III-phosphides heterojunction solar cell interface properties from admittance spectroscopy

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