High temperature coefficient of resistance and low noise tungsten oxide doped amorphous vanadium oxide thin films for microbolometer applications

Çelik, Özer; Duman, Memed

doi:10.1016/j.tsf.2019.137590

Cited by 20 publications

(7 citation statements)

References 22 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…9,10 As a result, more attentions have been looked into research and development of V +5 and V +4 phases for thermochromic [11][12][13] and bolometer applications. 7,8,14 V +4 is an interesting phase for thermochromic application as it shows the phase transition at $68 C. 9,10,13 However, V +4 is the most unstable phase. Reducing the TT along with phase stability is the major objective in the research community.…”

Section: Introductionmentioning

confidence: 99%

“…resistance as well as to improve the stability at ambient environment; this will be helpful for developing low noise bolometer devices. 7,8,14 The present study has been carried out to develop mixed oxide phases of vanadium thin film on low (e.g., Al) and high (e.g., quartz glass) IR emittance surfaces, respectively, towards aforesaid applications such as thermochromic and bolometer applications. The vanadium thin film studies on both high and low emittance surfaces are import particularly for thermochromic application point of view.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Optical, electronic, and microstructural properties of mixed phase RF magnetron sputtered vanadium oxide thin films on quartz and aluminized quartz

Hasan

Chavan

Dalal

et al. 2021

Surface & Interface Analysis

View full text Add to dashboard Cite

show abstract

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Optical, electronic, and microstructural properties of mixed phase RF magnetron sputtered vanadium oxide thin films on quartz and aluminized quartz

Hasan

Chavan

Dalal

et al. 2021

Surface & Interface Analysis

View full text Add to dashboard Cite

show abstract

“…Considering there is no obvious XRD signal from V 2 O 5 as shown above, the existence of V 5+ can be ascribed to spontaneous surface oxidation of VO 2 [29]. The peak at 515.4 eV indicates the presence of trivalent V in VYO-200 [39], which may be caused by the presence of Y and a higher deposition temperature. One can find there are differences in the V 2p binding energies for VO-100, VYO-100, VYO-150, and VYO-200.…”

Section: Crystal Structure and Compositionmentioning

confidence: 90%

Abnormal dependence of microstructures and electrical properties of Y-doped VO2 thin films on deposition temperature

Zhou

et al. 2020

Ceramics International

View full text Add to dashboard Cite

“…In SOI diode-based sensing, the wellknown dependency of the pn junction diode's saturation current on temperature is utilized for temperature sensing [4]. While in resistive-based sensing, the Arrhenius-governed resistive property of a semiconducting thin lm is exploited [5].…”

Section: Introductionmentioning

confidence: 99%

Electro-Optical Characterization of an Amorphous Germanium-Tin (Ge1-XSnx) Microbolometer

Bahaidra

Al‐Khalli

Hezam

et al. 2023

J Infrared Milli Terahz Waves

View full text Add to dashboard Cite

The utilization of amorphous germanium-tin (Ge 1 − x Sn x ) semiconducting thin lms as temperature sensing layers in microbolometers was recently presented and patented. The work in this paper started by extending the latest study to acquire better characteristics of the Sn concentrations % for microbolometer applications. In this work, Ge1-xSnx thin lms with various Sn concentrations %, x, where 0.31 ≤ x ≤ 0.48 we sputter deposited. Elemental composition was evaluated using Energy Dispersive X-ray (EDX) spectroscopy. Surface morphology was evaluated using Atomic Force Microscopy (AFM) revealing average roughness values between ~ 0.2-0.8 nm. Sheet resistance versus temperature measurements was performed and analyzed revealing temperature coe cients of resistances, TCRs, ranging from − 3.11%/K to -2.52%/K for x ranging from 0.31 to 0.40. The Ge1-xSnx thin lm was found to depart the semiconducting behavior at 0.40 < x ≤ 0.48. Empirical relationships are derived relating resistivity, TCR, and Sn concentration % for amorphous Ge1-xSnx thin lms. One of the lms with 31% Sn concentration (Ge 0.69 Sn 0.31 ) was used to fabricate 10×10 µm2 microbolometer prototypes using electron-beam lithography and liftoff techniques and the microbolometer is fabricated on top of oxidized silicon substrates with no air gap between them. The noise behavior and the maximum detected signal of the fabricated microbolometer were measured. The signal-to-noise ratio, voltage responsivity, and noise equivalent power values of the prototypes were calculated. Finally, the expected performance of the microbolometer when fabricated in an air bridge is calculated.

show abstract

High temperature coefficient of resistance and low noise tungsten oxide doped amorphous vanadium oxide thin films for microbolometer applications

Cited by 20 publications

References 22 publications

Optical, electronic, and microstructural properties of mixed phase RF magnetron sputtered vanadium oxide thin films on quartz and aluminized quartz

Optical, electronic, and microstructural properties of mixed phase RF magnetron sputtered vanadium oxide thin films on quartz and aluminized quartz

Abnormal dependence of microstructures and electrical properties of Y-doped VO2 thin films on deposition temperature

Electro-Optical Characterization of an Amorphous Germanium-Tin (Ge1-XSnx) Microbolometer

Contact Info

Product

Resources

About