High-temperature defect structure of Cd- and Te-rich CdTe

et al. 2003

Cryst. Res. Technol.

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Thermodynamic conditions for post-growth annealing to prepare near stoichiometric semi-insulating CdTe are studied for undoped, and Sn and Ge-doped single crystals. The main aim of the annealing procedure was to obtain high resistive material with the minimal concentration of native and foreign defects. The high temperature (200 -1000 °C) in-situ conductivity σ and Hall effect measurements were used to control the native defect density and to determine the Cd pressure p Cd at which shallow defects are compensated. It is shown that contrary to the undoped samples in which the change of the type of conductivity by variations of p Cd is easy, the Sn-and Ge-doped samples exhibit a much more stable behavior due to the Sn (Ge) selfcompensation. It was found that: the temperatures near 500 °C is optimum for the real-time annealing of bulk samples, the chemical diffusion is sufficiently fast at these temperatures while the uncontrolled change of defect density distribution during the subsequent cooling process is minimized. The time-dependent charge measurement technique was used to characterize the room-temperature specific resistivity distribution in the as-grown crystals, which indirectly controls the dynamic of solidification process. This allows us to consider the specific resistivity distribution along the growth direction of each crystal in terms of superposition of segregation and self-compensation phenomena.

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Section: Resultssupporting

confidence: 54%

Preparation of semi‐insulating CdTe doped with group IV elements by post growth annealing

Turkevych¹,

et al. 2003

Cryst. Res. Technol.

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“…Based on our solidus model, 12 which allowed us to evaluate the T-x projection of the CdTe-phase diagram inclusive of the solidus-stability region and the experimental liquidus line, 13 we estimated the composition of the liquid and summarized our data together with those from Ref. 11 in Fig.…”

Section: Discussionmentioning

confidence: 99%

Electrical properties of CdTe near the melting point

Belas

et al. 2003

Journal of Elec Materi

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“…Consequently, µ In is determined by [In] instead of P In . Both SLG (solid-liquid-gas) three-phase diagram [12] and thermodynamic equilibrium between P Cd (atm) and P Te2 (atm) deduced for pure CdTe [13] [8,14]. However, the density of Cd I is negligible at Te saturation.…”

Section: Theorymentioning

confidence: 99%

“…However, the density of Cd I is negligible at Te saturation. The existence of Te Cd is well-grounded in Te-rich CdTe [8,14] but its electrical character was not set yet. Moreover, the defect analysis based on most credible phase diagrams [13,15] shows fast damping of [Te Cd ] below 400 °C [10].…”

Section: Theorymentioning

confidence: 99%

“…The high-temperature thermodynamic properties of native PDs and their interactions with extrinsic PDs including self-compensation, defect reactions, complex formation, and Te precipitation are studied. The simulations are based on the high-temperature (200-900 °C) in situ conductivity and Hall effect measurements of heavily In-doped Te-rich CdTe single crystals and on a realistic defect model, which accords with the high-temperature transport data and pressure-temperature-composition phase diagram [8].…”

Section: Introductionmentioning

confidence: 99%

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High‐temperature defect study of tellurium‐enriched CdTe:In

Fochuk

Physica Status Solidi (b)

et al. 2006

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