High-temperature etching of SiC in SF6/O2 inductively coupled plasma

Осипов, А. А.; Iankevich, Gleb A.; Speshilova, Anastasia B.; Осипов, А. А.; Endiiarova, Ekaterina V.; Berezenko, Vladimir I.; Tyurikova, I. A.; Tyurikov, K. S.; Alexandrov, Sergei

doi:10.1038/s41598-020-77083-1

Cited by 35 publications

(13 citation statements)

References 38 publications

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“…5 a II,b I–III) show that the increase in SF 6 flow rate in the total gas mixture leads to an increase in the etching rate. Obviously, the observed increase in the etching rate is associated with an increase in the concentration of active fluorine particles in the process chamber 36 . In its turn, a higher concentration of fluorine radicals leads to an increase in the contribution of the chemical part of the PCE process over the physical part (sputtering), which is strongly evidenced by the increase in selectivity (Fig.…”

Section: Resultsmentioning

confidence: 94%

OES diagnostics as a universal technique to control the Si etching structures profile in ICP

Осипов

Iankevich

Speshilova

et al. 2022

Sci Rep

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In this work, we demonstrate the high efficiency of optical emission spectroscopy to estimate the etching profile of silicon structures in SF6/C4F8/O2 plasma. The etching profile is evaluated as a ratio of the emission intensity of the oxygen line (778.1 nm) to the fluorine lines (685.8 nm and 703.9 nm). It was found that for the creation of directional structures with line sizes from 13 to 100 μm and aspect ratio from ≈ 0.15 to ≈ 5 the optimal intensities ratio is in the range of 2–6, and for structures from 400 to 4000 μm with aspect ratio from ≈ 0.03 to ≈ 0.37 it is in the range 1.5–2. Moreover, the influence of the process parameters on the etching rate of silicon, the etching rate of aluminum, the inclination angle of the profile wall of the etched window, the selectivity of silicon etching with respect to aluminum, and the influence on the overetching (Bowing effect) of the structure was investigated.

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Section: Resultsmentioning

confidence: 94%

OES diagnostics as a universal technique to control the Si etching structures profile in ICP

Осипов

Iankevich

Speshilova

et al. 2022

Sci Rep

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“…Among others, the influence of these parameters on the etching rate of SiC and on the SiC surface morphology has been studied (see Table 1 ). It has been established that the etching rate of SiC also depends on the temperature of the substrate holder and reaches its maximum (1.28 μm/min) at temperatures close to 150 °C [ 45 ]. Attempts were also made to increase the rate of SiC etching by the initial modification of the studied samples by irradiation them with a laser prior to the etching process.…”

Section: Etching Of Sic With Different Plasmasmentioning

confidence: 99%

“…The surface roughness is also clearly influenced by the temperature of the substrate during etching process. It was shown that change in the temperature of the substrate holder in the range from 100 to 300 °C can lead to sharp decrease in the root mean square roughness from 153 to 0.7 nm [ 45 ].…”

Section: Etching Of Sic With Different Plasmasmentioning

confidence: 99%

A Review: Inductively Coupled Plasma Reactive Ion Etching of Silicon Carbide

et al. 2021

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The inductively coupled plasma reactive ion etching (ICP-RIE) is a selective dry etching method used in fabrication technology of various semiconductor devices. The etching is used to form non-planar microstructures—trenches or mesa structures, and tilted sidewalls with a controlled angle. The ICP-RIE method combining a high finishing accuracy and reproducibility is excellent for etching hard materials, such as SiC, GaN or diamond. The paper presents a review of silicon carbide etching—principles of the ICP-RIE method, the results of SiC etching and undesired phenomena of the ICP-RIE process are presented. The article includes SEM photos and experimental results obtained from different ICP-RIE processes. The influence of O2 addition to the SF6 plasma as well as the change of both RIE and ICP power on the etching rate of the Cr mask used in processes and on the selectivity of SiC/Cr etching are reported for the first time. SiC is an attractive semiconductor with many excellent properties, that can bring huge potential benefits thorough advances in submicron semiconductor processing technology. Recently, there has been an interest in SiC due to its potential wide application in power electronics, in particular in automotive, renewable energy and rail transport.

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“…17 Recently, Iankevich et al demonstrated the formation of highly oriented (90°taper angle) structures with subnanometer surface roughness in thermally stimulated SiC, at 150 °C, using SF 6 / O 2 ICP dry etching. 26 The increased etching temperature also caused a monotonic increase in the etching rate. Also, Cardinaud et al reported on thin-film etching using SF 6 /Ar and found smooth surfaces, free of fluorinated products, for etching mixtures with a high percentage of argon (95%).…”

Section: ■ Introductionmentioning

confidence: 97%

Systematic Characterization of Plasma-Etched Trenches on 4H-SiC Wafers

et al. 2021

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Silicon carbide power semiconductors overcome some limitations of silicon chips, and therefore, SiC is an attractive candidate for next-generation power electronics. In addition, the number of possible vertical devices that can be obtained on a given surface using the trench technique is significantly larger than that attainable using a planar setup. Moreover, a SiC trench power metal oxide semiconductor field-effect transistor (power MOSFET) structure removes the junction field-effect transistor (JFET) region (that would decrease the current flow width) and improves the channel density, thus reducing the specific electrical resistance. Consequently, in the present study, we report on the chemical bonding state of elements and structural characterization of trenches, obtained using SF 6 -based plasma etching, on the 4H-SiC polytype substrate. An interferometric algorithm that finds the endpoint to stop etching governed the trench depth. Scanning electron microscopy, transmission electron microscopy, atomic force microscopy, and X-ray photoelectron spectroscopy analyses stated the high quality and uniformity of the trenches. These materials are particularly promising for the fabrication of the SiC MOSFET to be implemented in the manufacturing of power devices.

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High-temperature etching of SiC in SF6/O2 inductively coupled plasma

Cited by 35 publications

References 38 publications

OES diagnostics as a universal technique to control the Si etching structures profile in ICP

OES diagnostics as a universal technique to control the Si etching structures profile in ICP

A Review: Inductively Coupled Plasma Reactive Ion Etching of Silicon Carbide

Systematic Characterization of Plasma-Etched Trenches on 4H-SiC Wafers

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