High-temperature ferromagnetism of Si 1−x Mn x ( x ≈0.52−0.55) alloys

Rylkov, V. V.; Бугаев, А. С.; Novodvorskii, O. A.; Тугушев, В. В.; Kulatov, E.; Zenkevich, A.; Семисалова, А.С.; Николаев, С. Н.; Веденеев, А. С.; Shorokhova, A. V.; Averyanov, Dmitry V.; Chernoglazov, K. Yu.; Ганьшина, Е. А.; Granovsky, A. B.; Wang, Y.; Panchenko, V. Ya.; Zhou, Shengqiang

doi:10.1016/j.jmmm.2014.09.028

Cited by 4 publications

(8 citation statements)

References 14 publications

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“…13 The substrate temperature during the deposition (340 • C) was the same as for previous DG deposited films, while the deposition rate was higher (≥ 7 nm/min). The Rutherford backscattering spectrometry (RBS) was used to determine the film composition and thickness.…”

Section: Samples and Experimental Detailsmentioning

confidence: 99%

“…The Rutherford backscattering spectrometry (RBS) was used to determine the film composition and thickness. 13 The film thickness d depends on the distance L to the target; the value d decreases from 270 to 70 nm with the increase of L at the length δL≈15 mm. The Mn content at the same deposited area increases from 0.506 up to 0.517.…”

Section: Samples and Experimental Detailsmentioning

confidence: 99%

“…The Mn content at the same deposited area increases from 0.506 up to 0.517, but most strongly the Mn content and film thickness change at the substrate edge located closer to the target. 13 When the film thickness decreases from 160 to 70 nm (δL≈10 mm), the film composition slightly changes with L (x ≈ 0.514-0.517). To investigate the effect of the film composition and deposition rate on the structural, magnetic and magneto-transport properties, the as grown sample was cut into seven 2x10 mm 2 stripes with different thicknesses.…”

Section: Samples and Experimental Detailsmentioning

confidence: 99%

“…13 As compared to the conventional "direct" geometry (DG) of Ref. 3 and 4, in the SG method the effective scattering of ablated particles in the buffer gas results in the lower energy of the depositing atoms as well as very high deposition rate.…”

Section: Introductionmentioning

confidence: 99%

“…3 and 4, in the SG method the effective scattering of ablated particles in the buffer gas results in the lower energy of the depositing atoms as well as very high deposition rate. 13 We found that SG grown Mn x Si 1-x (x ≈ 0.5) films have two magnetic phases: HT FM phase with T C ≈ 370 K and LT FM phase with T C ≈ 46 K. At the same time, the anomalous Hall effect (AHE) changes its sign from the positive to negative one at the temperature below 30 K. We explain obtained experimental results by the interplay of two effects: 1) self-organization of polycrystalline film leading to the formation of two layers in which the crystallites strongly differ in size and shape; 2) peculiarities of defect-induced FM ordering in such a system.…”

Section: Introductionmentioning

confidence: 99%

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Ferromagnetism of MnxSi1-x(x ∼ 0.5) films grown in the shadow geometry by pulsed laser deposition method

et al. 2016

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Absence of anomalous Nernst effect in spin Seebeck effect of Pt/YIG AIP Advances 6, 015018 (2016); 10.1063/1.4941340Dual resonant structure for energy harvesting from random vibration sources at low frequency AIP Advances 6, 015019 (2016) The results of a comprehensive study of magnetic, magneto-transport and structural properties of nonstoichiometric Mn x Si 1-x (x≈0.51-0.52) films grown by the Pulsed Laser Deposition (PLD) technique onto Al 2 O 3 (0001) single crystal substrates at T = 340 • C are present. A highlight of used PLD method is the non-conventional ("shadow") geometry with Kr as a scattering gas during the sample growth. It is found that the films exhibit high-temperature (HT) ferromagnetism (FM) with the Curie temperature T C ∼ 370 K accompanied by positive sign anomalous Hall effect (AHE); they also reveal the polycrystalline structure with unusual distribution of grains in size and shape. It is established that HT FM order is originated from the bottom interfacial self-organizing nanocrystalline layer. The upper layer adopted columnar structure with the lateral grain size ≥ 50 nm, possesses low temperature (LT) type of FM order with T c

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Section: Samples and Experimental Detailsmentioning

confidence: 99%

Section: Samples and Experimental Detailsmentioning

confidence: 99%

Section: Samples and Experimental Detailsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Ferromagnetism of MnxSi1-x(x ∼ 0.5) films grown in the shadow geometry by pulsed laser deposition method

et al. 2016

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Investigation of InSb:Mn thin films magnetoresistance by I-V characteristics method

et al. 2018

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Engineering helimagnetism in MnSi thin films

et al. 2016

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Magnetic skyrmion materials have the great advantage of a robust topological magnetic structure, which makes them stable against the superparamagnetic effect and therefore a candidate for the next-generation of spintronic memory devices. Bulk MnSi, with an ordering temperature of 29.5 K, is a typical skyrmion system with a propagation vector periodicity of ∼18 nm. One crucial prerequisite for any kind of application, however, is the observation and precise control of skyrmions in thin films at room-temperature. Strain in epitaxial MnSi thin films is known to raise the transition temperature to 43 K. Here we show, using magnetometry and x-ray spectroscopy, that the transition temperature can be raised further through proximity coupling to a ferromagnetic layer. Similarly, the external field required to stabilize the helimagnetic phase is lowered. Transmission electron microscopy with element-sensitive detection is used to explore the structural origin of ferromagnetism in these Mn-doped substrates. Our work suggests that an artificial pinning layer, not limited to the MnSi/Si system, may enable room temperature, zero-field skyrmion thin-film systems, thereby opening the door to device applications.

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High-temperature ferromagnetism of Si 1−x Mn x ( x ≈0.52−0.55) alloys

Cited by 4 publications

References 14 publications

Ferromagnetism of MnxSi1-x(x ∼ 0.5) films grown in the shadow geometry by pulsed laser deposition method

Ferromagnetism of MnxSi1-x(x ∼ 0.5) films grown in the shadow geometry by pulsed laser deposition method

Investigation of InSb:Mn thin films magnetoresistance by I-V characteristics method

Engineering helimagnetism in MnSi thin films

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