High-temperature growth and in-situ annealing of MgZnO thin films by RF sputtering

Kim, Y.Y.; An, Cheol Hyun; Cho, Hyung Koun; Kim, J.H.; Lee, H.S.; Jung, E.S.; Kim, H.S.

doi:10.1016/j.tsf.2007.07.108

Cited by 30 publications

(17 citation statements)

References 22 publications

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“…That study indicated that annealing in a high vacuum environment was the superior route for the improvement of the ratio of the intensity of the UV/deep level emission. Moreover, the annealing process resulted in an increase of the grain sizes and in improved morphology [41]. Additionally, annealing investigations of MgZnO sputtered films at a temperature range of 450-750°C in air have indicated the significant improvement of the granular morphology at *750°C [42].…”

Section: Bandgap Properties: Transmission and Urbach Analysismentioning

confidence: 98%

“…In has been previously demonstrated that the UV-PL of ZnO can be profoundly enhanced via annealing [39]. Less work has been done regarding this topic for MgZnO alloys, specifically for sputtered alloys [40][41][42].…”

Section: Bandgap Properties: Transmission and Urbach Analysismentioning

confidence: 99%

“…Due to the different growth methods, the MOCVD films have a planar-like morphology, in contrast to the granular morphology of our samples grown via the sputtering technique. As film morphology can be very detrimental to the light efficiency, a better comparison could be carried out with studies on MgZnO films grown using a similar technique to ours [41,42]. In-situ annealing studies of sputtered MgZnO films under an oxygen environment and vacuum was previously conducted [41].…”

Section: Bandgap Properties: Transmission and Urbach Analysismentioning

confidence: 99%

“…As film morphology can be very detrimental to the light efficiency, a better comparison could be carried out with studies on MgZnO films grown using a similar technique to ours [41,42]. In-situ annealing studies of sputtered MgZnO films under an oxygen environment and vacuum was previously conducted [41]. That study indicated that annealing in a high vacuum environment was the superior route for the improvement of the ratio of the intensity of the UV/deep level emission.…”

Section: Bandgap Properties: Transmission and Urbach Analysismentioning

confidence: 99%

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UV-luminescent MgZnO semiconductor alloys: nanostructure and optical properties

Thapa

Huso

Miklos

et al. 2016

J Mater Sci: Mater Electron

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MgZnO is emerging as a vital semiconductoralloy system with desirable optical properties that can span a large range of the UV spectrum. Due to its benign chemical character, MgZnO is considered to be an environmentally friendly material. This paper presents studies on annealing as a useful and straightforward approach for the enhancement of the optical and crystal quality of Mg 0.17 Zn 0.83 O nanocrystalline films grown via DC sputtering. The alloys were studied via several imaging and optical techniques. It was found that high-temperature annealing, *900°C, in Argon atmosphere, significantly improves the solubility of the alloy. This temperature range is consistent with the thermal diffusion temperature of Mg needed for the creation of a soluble alloy. Moreover, the annealing process was found to minimize the undesirable visible luminescence, attributed to Mg and Zn interstitials, while significantly enhancing the bandgap sharpness and the efficiency of the UV-luminescence at *3.5 eV. The analysis indicated that these optical attributes were achieved due to the combined effects of good solubility, an improved morphology, and a reduction of native defects. The annealing was also proven to be beneficial for the reduction of the compressive stress in the alloy: a relaxation *1.8 GPa was calculated via Raman scattering. The inherent stress was inferred to originate mainly from the granular morphology of the alloys.

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Section: Bandgap Properties: Transmission and Urbach Analysismentioning

confidence: 98%

Section: Bandgap Properties: Transmission and Urbach Analysismentioning

confidence: 99%

Section: Bandgap Properties: Transmission and Urbach Analysismentioning

confidence: 99%

Section: Bandgap Properties: Transmission and Urbach Analysismentioning

confidence: 99%

See 2 more Smart Citations

UV-luminescent MgZnO semiconductor alloys: nanostructure and optical properties

Thapa

Huso

Miklos

et al. 2016

J Mater Sci: Mater Electron

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“…The structural, electrical, and optical properties of ZnO thin films are readily modified by the addition of annealing. Kim et al have been reported the effect of in-situ annealing temperature on microstructural, elemental and emission properties of MgZnO thin films [5]. Tian et al have been reported the influences of annealing temperature on the structural and optical properties of the ZnO films annealed by furnace [6].…”

Section: +mentioning

confidence: 99%

Effect of Heat Treatment Method on Properties of ZnO Thin Films Deposited by RF Magnetron Sputtering

Kim

2017

Appl. Sci. Converg. Technol.

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ZnO thin films which were deposited by RF magnetron sputtering system were annealed by furnace and insitu heat treatment methods. We investigated the effect of heat treatment method on physical properties of ZnO thin films. The structural and optical properties of ZnO thin films were improved by heat treatment. Through the annealing treatment of ZnO film by furnace, the good crystallinity and ultraviolet emission were obtained. These results are attributed to the improved formation of Zn-O bond in ZnO thin film annealed at by furnace. We confirm that the formation of Zn-O bond plays an important role in obtaining the excellent structural and optical properties of ZnO thin films.

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The Effect of High Temperature Annealing on the Photoluminescence of ZnMgO Alloys

Borkovska

Khomenkova

Маркевич

et al. 2018

Physica Status Solidi (a)

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The effect of thermal annealing on the luminescence of wurtzite ZnMgO alloys in the films and ceramics produced by solid state reaction route is investigated. Formation of hexagonal ZnMgO phase is proved by X‐ray diffraction, micro‐Raman, photoluminescence (PL), and PL excitation methods. Mg starts incorporating into ZnO lattice at 700 °C, and its content increases with the increase of the annealing temperature up to 1000 °C. Nevertheless, in the PL spectra of the films annealed in air at 1000 °C, excitonic and defect‐related emissions from residual ZnO phase dominate, while those from the ZnMgO alloy are weak. The annealing in Zn vapor results in even weaker ZnMgO PL. In ceramics sintered in the air at 1000 °C, the PL from wurtzite ZnMgO phase is found to be strongly supressed on the surface and bright in the depth of a pellet. The gettering of Na, K, and Ca residual impurities at the surface of the samples under annealing is proved by Secondary ion mass spectrometry. It is proposed that degradation of ZnMgO PL in the near surface region is caused mainly by intense thermal decomposition of wurtzite ZnMgO phase accompanied by generation of non‐radiative defects.

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High-temperature growth and in-situ annealing of MgZnO thin films by RF sputtering

Cited by 30 publications

References 22 publications

UV-luminescent MgZnO semiconductor alloys: nanostructure and optical properties

UV-luminescent MgZnO semiconductor alloys: nanostructure and optical properties

Effect of Heat Treatment Method on Properties of ZnO Thin Films Deposited by RF Magnetron Sputtering

The Effect of High Temperature Annealing on the Photoluminescence of ZnMgO Alloys

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