The Effect of High Temperature Annealing on the Photoluminescence of ZnMgO Alloys

Borkovska, L.; Khomenkova, L.; Маркевич, И. В.; Osipyonok, M. M.; Kolomys, O.; Rarata, S.; Oberemok, O.; Gudymenko, O.; Kryvko, Andriy; Strelchuk, V. V.

doi:10.1002/pssa.201800250

Cited by 6 publications

(3 citation statements)

References 41 publications

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“…For example, our previous studies of Mg Zn 1− O thick layers and ceramic specimens prepared from a mixture of oxides using the solidphase reaction method at high temperatures showed that a homogeneous solid solution with the hexagonal structure can be obtained, if the magnesium ox-ide content does not exceed a value of about 20% ( = 0.2). In this case, the band gap increases to 3.7 eV [27,28]. At > 0.2, the additional formation of the MgO phase with cubic structure takes place.…”

Section: Introductionmentioning

confidence: 93%

Phonon-Polariton Excitations in MgZnO/6H-SiC Structures

Melnichuk¹,

Melnichuk²,

Korsunska³

et al. 2020

Ukr. J. Phys.

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Specular infrared reflection spectra in the range of “residual rays” of the film and the substrate and in the case of the E⊥c orientation of the electric field have been simulated for the first time for thin MgxZn1−xO films deposited on optically anisotropic 6H-SiC substrates. The simulation was carried out making use of self-consistent parameters obtained earlier for magnesium oxide, zinc oxide, and silicon carbide single crystals. The film thickness and the Mg content x in the film are demonstrated to considerably distort the reflection spectra and to change the reflectivity of the MgxZn1−xO/6H-SiC structure. Using the Kramers–Kronig relation, the spectral intervals, where the reflectivity is sensitive to the film thickness and to the doping levels of the film and the substrate, are determined. The main attention is paid to analyze results obtained for x = 0.2. The existence of surface polaritons in such structures is theoretically demonstrated for the first time, and the attenuated total reflectance surface I(v)/I0(v) is plotted as a three-dimensional representation of the structure transmittance dependence on the radiation frequency and the incidence angle. A possibility to study the resonant interaction of optical phonons with plasmons in the film and the substrate is demonstrated.

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Section: Introductionmentioning

confidence: 93%

Phonon-Polariton Excitations in MgZnO/6H-SiC Structures

Melnichuk¹,

Melnichuk²,

Korsunska³

et al. 2020

Ukr. J. Phys.

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“…In the sample of x = 0.75, a hexagonal phase of the ZnMgO solid solution will be formed instead of ZnO phase. The bandgap of ZnMgO solid solution is larger than that of ZnO, [ 29 ] and, accordingly, the absorption edge of this phase shifts to the short wavelength region.…”

Section: Resultsmentioning

confidence: 99%

Optical and Structural Properties of Mn⁴⁺‐Activated (Zn_xMg_1–x)₂TiO₄ Red Phosphors

Borkovska

Stara

Vorona

et al. 2021

Physica Status Solidi (a)

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A report on optical and structural investigations of Mn4+‐activated (ZnxMg1–x)2TiO4 red phosphors by X‐ray diffraction, photoluminescence (PL), and electron paramagnetic resonance methods is provided. The phosphors of Mg2TiO4, Zn2TiO4 and solid solutions (ZnxMg1–x)2TiO4 (x = 0.25, 0.50, 0.75) with manganese content of 0.1 mol% are synthesized at temperatures in the range of 800–1200 °C via solid state reaction. Formation of solid solutions of inverse spinel structure demonstrates the features similar to both the Mg2TiO4 and Zn2TiO4, i.e., decomposition of the (Zn,Mg)2TiO4 on the (Zn,Mg)TiO3 and MgO and separation of the secondary ZnO phase, respectively. These processes depend on the composition of solid solution and sintering temperature, and for some regimes, the single‐phase phosphor can be obtained. The largest intensity of Mn4+ red PL is found in the Mn‐doped (Zn0.25Mg0.75)2TiO4 phosphor sintered at 1100 °C and it is 2 times larger than those in similar Mn4+‐activated Mg2TiO4 phosphor. The differences in the PL intensity of the phosphors of solid solutions are explained by different PL thermal quenching as well as by competing processes of Mn incorporation in +2 and +4 charge states in zinc–magnesium titanate crystal lattice.

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“…However, as is well known, ZnO crystallizes and is stabilized in the hexagonal wurtzite lattice, whereas MgO is stabilized in the cubic rock salt lattice. As the Mg content increases, the crystalline structure of ZnMgO ternary alloy will transform through the wurtzite phase (low Mg content), mixed-phase (both hexagonal and cubic phase), and cubic phase (high Mg content) [ 14 , 17 ]. UVPDs based on cubic rock-salt ZnMgO (c-ZnMgO), wurtzite ZnMgO (w-ZnMgO), and mixed-phase ZnMgO (m-ZnMgO) have been reported [ 18 , 19 , 20 ].…”

Section: Introductionmentioning

confidence: 99%

Enhanced Deep Ultraviolet Photoresponse in Ga doped ZnMgO Thin Film

Wang

Jiao

et al. 2022

Micromachines

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High Mg content (60%) ZnMgO samples with and without Ga dope were grown by an RF magnetron sputtering system. The effect of Ga dope on the ZnMgO sample and the respective ultraviolet photodetectors (UVPD) device’s performance were carefully studied by various experimental methods. The investigations of the structure and optical properties of the ZnMgO sample established that the Ga doped sample has a better crystal quality and larger band gap (5.54 eV). The current-voltage characteristics indicate that both the photocurrent and dark current were enhanced after Ga dope. Under 12 V bias, the undoped UVPD show two spectral response peaks at 244 nm and 271 nm with a responsivity of 1.9 A/W and 0.38 A/W, respectively. While the Ga doped UVPD showed only one response peak at 241 nm and the deep UV responsibility up to 8.9 A/W;, as the bias increased from 12 V to 60 V, the responsiveness raised to 52 A/W, with a signal to noise ratio (241 nm/700 nm) as high as 105. Combining the results of XRD, PL spectrum and XPS, the enhanced ultraviolet photoresponse of the Ga dope device contributed to improving the crystal quality and “dopant-defect pairing effect” caused by Ga doping, which led to a considerable reduction in the number of ionized impurities in the scatting centers, and enhanced the carrier’s mobility. Our work demonstrates that even a high Mg content ZnMgO can exhibit enhanced UV performance after a Ga dope due to the dopant-defect pairing effect, which confirmed the advantage of the use of ZnMgO in the deep-UV region.

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The Effect of High Temperature Annealing on the Photoluminescence of ZnMgO Alloys

Cited by 6 publications

References 41 publications

Phonon-Polariton Excitations in MgZnO/6H-SiC Structures

Phonon-Polariton Excitations in MgZnO/6H-SiC Structures

Optical and Structural Properties of Mn⁴⁺‐Activated (Zn_xMg_1–x)₂TiO₄ Red Phosphors

Enhanced Deep Ultraviolet Photoresponse in Ga doped ZnMgO Thin Film

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The Effect of High Temperature Annealing on the Photoluminescence of ZnMgO Alloys

Cited by 6 publications

References 41 publications

Phonon-Polariton Excitations in MgZnO/6H-SiC Structures

Phonon-Polariton Excitations in MgZnO/6H-SiC Structures

Optical and Structural Properties of Mn4+‐Activated (ZnxMg1–x)2TiO4 Red Phosphors

Enhanced Deep Ultraviolet Photoresponse in Ga doped ZnMgO Thin Film

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Optical and Structural Properties of Mn⁴⁺‐Activated (Zn_xMg_1–x)₂TiO₄ Red Phosphors